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김성현,이승훈,박재한,김신호,김양도 한국재료학회 2022 한국재료학회지 Vol.32 No.5
This study demonstrates a different approach method to fabricate antimony selenide (Sb2Se3) thin-films for the solar cell applications. As-deposited Sb2Se3 thin-films are fabricated via electrodeposition route and, subsequently, annealed in the temperature range of 230 ~ 310oC. Cyclic voltammetry is performed to investigate the electrochemical behavior of the Sb and Se ions. The deposition potential of the Sb2Se3 thin films is determined to be -0.6 V vs. Ag/AgCl (in 1 M KCl), where the stoichiometric composition of Sb2Se3 appeared. It is found that the crystal orientations of Sb2Se3 thin-films are largely dependent on the annealing temperature. At an annealing temperature of 250 oC, the Sb2Se3 thin-film grew most along the c-axis [(211) and/or (221)] direction, which resulted in the smooth movement of carriers, thereby increasing the carrier collection probability. Therefore, the solar cell using Sb2Se3 thin-film annealed at 250 oC exhibited significant enhancement in JSC of 10.03 mA/cm2 and a highest conversion efficiency of 0.821 % because of the preferred orientation of the Sb2Se3 thin film.
Kwon, Yong Hun,Kim, Young Been,Jeong, Myoungho,Do, Hyun Woo,Cho, Hyung Koun,Lee, Jeong Yong Elsevier 2017 Solar energy materials and solar cells Vol.172 No.-
<P><B>Abstract</B></P> <P>Sb<SUB>2</SUB>Se<SUB>3</SUB> is an emerging material among alternative light absorbers for photovoltaic applications. Unlike typical chalcogenides, Sb<SUB>2</SUB>Se<SUB>3</SUB> is particularly appealing due to its single stable crystal phase, layered structure with loose binding of no dangling bonds. Nevertheless, a cost-effective electrochemical approach for the synthesis of Sb<SUB>2</SUB>Se<SUB>3</SUB> compounds has not been identified, and the Sb<SUB>2</SUB>Se<SUB>3</SUB> film with the most favorable [001] preferred orientation has only just been developed. In this study, Sb-rich precursors were prepared electrochemically at −950mV (vs. Ag/AgCl), and homogeneous Sb<SUB>2</SUB>Se<SUB>3</SUB> thin films were produced using a pre-thermal treatment process prior to the typical selenization process with additional Se coating. This novel procedure notably suppresses potential Sb dissolution into liquid Se due to the formation of polycrystalline Sb-related crystals. As a result, the Sb-rich precursor was successfully transformed into Sb<SUB>2</SUB>Se<SUB>3</SUB> thin films with an enhanced perpendicular orientation of the [001] direction. Unfortunately, a high density of voids was produced in the precursor film with two distinguishable layers, and their size increased after selenization. The voids were formed through evolution of H<SUB>2</SUB>Se gas after the initial electrochemical reaction. The resulting photovoltaic cells demonstrated an energy conversion efficiency of 1.8% in a substrate structure consisting of Mo/Sb<SUB>2</SUB>Se<SUB>3</SUB>/CdS/ZnO/ITO.</P> <P><B>Highlights</B></P> <P> <UL> <LI> Alternative binary thin film photovoltaic absorber materials is proposed. </LI> <LI> Novel process is designed to synthesize thin film, not spontaneous Sb<SUB>2</SUB>Se<SUB>3</SUB> nanowire. </LI> <LI> The growth evolution of Sb<SUB>2</SUB>Se<SUB>3</SUB> thin film is evaluated via TEM and XRD analysis. </LI> </UL> </P> <P><B>Graphical abstract</B></P> <P>Layered structure Sb<SUB>2</SUB>Se<SUB>3</SUB> with loose binding of no dangling bonds is an emerging material among alternative light absorbers for photovoltaic applications. Sb-rich precursors were prepared electrochemically and homogeneous Sb<SUB>2</SUB>Se<SUB>3</SUB> thin films were produced using a pre-thermal treatment process prior to the typical selenization process with additional Se coating. This procedure notably suppresses potential Sb dissolution into liquid Se, and as a result, forms the Sb<SUB>2</SUB>Se<SUB>3</SUB> thin films with an enhanced perpendicular orientation of the [001] direction.</P> <P>[DISPLAY OMISSION]</P>
Wang, Xia,Wang, Hong,Li, Qiang,Li, Hongsen,Xu, Jie,Zhao, Guoxia,Li, Hongliang,Guo, Peizhi,Li, Shandong,Sun, Yang-kook The Electrochemical Society 2017 Journal of the Electrochemical Society Vol.164 No.13
<P>A promising anode material for lithium-ion batteries (LIBs) consisting of Sb2Se3 nanorods and reduced graphene oxide (rGO) sheets has been prepared by an effective solvothermal approach. The synergetic effect between Sb2Se3 nanorods and rGO matrix provides not only high conductivity paths and strong electron contact interface, but also alleviates the volume change of Sb2Se3 nanorods, resulting in excellent lithium-storage performance. When tested as an anode material for LIBs, a high capacity of 868.30 mAh g(-1) can be retained after 100 cycles at 200 mA g(-1). Even at 2000 mA g(-1), a satisfactory capacity of 430.40 mAh g(-1) after long 550 cycles can be delivered. Ex situ X-ray diffraction study suggests that the Sb2Se3/rGO composite follows the combined Li+ intercalation, conversion reaction and alloying reaction mechanism. These features suggest the Sb2Se3/rGO composite a viable choice for application as an anode material in high-performance LIBs. (C) 2017 The Electrochemical Society. All rights reserved.</P>
Rueda Pérez E.A.,Regalado-Pérez E.,Cerdán-Pasarán Andrea,Avilez García R.G.,Mathews N.R. 한국물리학회 2023 Current Applied Physics Vol.47 No.-
This work presents one-step electrodeposition of antimony sulfide selenide (Sb2(SxSe1-x)3) thin films on fluorine doped SnO2 substrates. Based on the cyclic voltammetry studies the Sb2(SxSe1-x)3 absorber layers were deposited at different potentials in the range of -0.6 to -0.72 V vs. saturated calomel electrode. The deposited films were uniform and well adhered to the substrate. The effects of the deposition potential and the post-deposition annealing treatment on the physical and chemical properties of the films were analyzed using X-ray diffraction (XRD), Raman spectroscopy, atomic force microscopy, scanning electron microscopy, and UV–visible–NIR spectroscopy. The films were crystallized in an orthorhombic crystal structure and the formation of ternary material without any impurity phases was clear from the XRD. The optical band gap of Sb2(SxSe1-x)3 decreased with the increase of the Se concentration in the films. The Mott Schottky plot showed negative slope characteristic of p-type materials. A larger carrier concentration was obtained for films deposited at more negative potentials due to their higher Se content. Solar cells modeled on experimental data of Sb2(SxSe1-x)3 thin films were investigated via device simulation using SCAPS-1D software. The FTO/Sb2(SxSe1-x)3/SnS2 structure showed an efficiency of 11.5%, demonstrating the feasibility of SnS2 as a cadmium-free alternative to the traditional CdS buffer layer.
Taifeng Ju,Bonkee Koo,Jea Woong Jo,Min Jae Ko 한국물리학회 2020 Current Applied Physics Vol.20 No.2
Thin-film solar cells have attracted worldwide attention due to their high efficiency and low cost. Antimony selenide (Sb2Se3) is a promising light absorption material candidate for thin-film solar cells due to its suitable band gap, abundance, low toxicity, and high chemical stability. Herein, we fabricate an Sb2Se3 thin film solar cell using a simple hydrazine solution process. By controlling the thickness of the photoactive layer and inserting a poly(3-hexylthiophene) hole-transporting layer, an Sb2Se3 solar cell with a power conversion efficiency of 2.45% was achieved.
Faisal Baig,Yousaf Hameed Khattak,Ahmed Shuja,Kashif Riaz,Bernabé Marí Soucase 한국물리학회 2020 Current Applied Physics Vol.20 No.8
A novel structure is proposed in this work for the efficiency enhancement of experimentally designed Sb2Se3 solar cell by device optimization, the band offset engineering, and Hole Transport Layer (HTL) with the aid of numerical modeling in SCAPS-1D simulator. J− V result of an experimental device was replicated in SCAPS-1D to validate simulated results. After validation of experimental solar cell result, device optimization of Sb2Se3/ZnO/FTO solar cell was performed and after device optimization, power conversion efficiency (PCE) of solar cell jumps from 3.59% to 11.29%. The PCE was further enhanced to value 14.46% by adjusting the band offset between Sb2Se3/ZnO interface. This task was accomplished by introducing Sn doped ZnO layer. Lastly, different HTL layers was applied to Sb2Se3/Zn(Sn, O)/FTO solar cell and among themCZTSe as HTL gave highest values of Fill Factor (FF), PCE, open circuit voltage (VOC) and short circuit current (JSC), 81.18% and 18.50%, 0.66 V and 34.66 mA/cm2.