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Reduction of Railway-induced Vibration using In-filled Trenches with Pipes
Hasheminezhad, Araz The Korean Society for Railway 2014 International Journal of Railway Vol.7 No.1
Reduction in railway-induced vibrations in urban areas is a very challenging task in railway transportation. Many mitigation measures can be considered and applied. Among these, a little attention has been paid to trenches. In this study, a numerical investigation on the effectiveness of in-filled trenches with pipes in reducing railway vibrations due to passing trains is presented. Particularly, a series of two-dimensional dynamic analysis was performed to model the behavior of ballasted railway track under harmonic load with ABAQUS software as a Finite Element method. In so doing, two types of in-filled trenches with pipes with steel and concrete materials have been investigated in this paper. In addition, effectiveness of pipes made of steel and concrete, filled with loose sand and clay in railway-induced vibration reduction has been assessed. The results point out that using in-filled trench with pipes does not effective a lot on railway-induced vibration reduction in comparison to other railway-induced vibration reduction methods. However, in-filled trenches with steel pipes are much more effective than in-filled trenches with concrete pipes. Moreover, filling pipes with loose sand and clay does not have any effect on vibration reduction efficiency of these in-filled trenches.
Jongmin Geum,Eun Sik Jung,Yong Tae Kim,Ey Goo Kang,Man Young Sung 대한전기학회 2014 Journal of Electrical Engineering & Technology Vol.9 No.3
In Super Junction (SJ) MOSFETs, charge balance is the most important issue of the SJ fabrication process. In order to achieve the best electrical characteristics, such as breakdown voltage and on-resistance, the N-type and P-type drift regions must be fully depleted when the drain bias approaches the breakdown voltage, which is known as the charge balance condition. In conventional charge balance analysis, based on multi-epi process SJ MOSFETs, analytical model has only N, P pillar width and doping concentration parameter. But applying a conventional charge balance principle to trench filling process, easier than Multi-epi process, is impossible due to the missing of the trench angle parameter. To achieve much more superior characteristics of on-resistance in trench filling SJ MOFET, the appropriate trench angle is necessary. So in this paper, modulated charge balance analysis is proposed, in which a trench angle parameter is added. The proposed method is validated using the TCAD simulation tool.
Geum, Jongmin,Jung, Eun Sik,Kim, Yong Tae,Kang, Ey Goo,Sung, Man Young The Korean Institute of Electrical Engineers 2014 Journal of Electrical Engineering & Technology Vol.9 No.3
In Super Junction (SJ) MOSFETs, charge balance is the most important issue of the SJ fabrication process. In order to achieve the best electrical characteristics, such as breakdown voltage and on-resistance, the N-type and P-type drift regions must be fully depleted when the drain bias approaches the breakdown voltage, which is known as the charge balance condition. In conventional charge balance analysis, based on multi-epi process SJ MOSFETs, analytical model has only N, P pillar width and doping concentration parameter. But applying a conventional charge balance principle to trench filling process, easier than Multi-epi process, is impossible due to the missing of the trench angle parameter. To achieve much more superior characteristics of on-resistance in trench filling SJ MOFET, the appropriate trench angle is necessary. So in this paper, modulated charge balance analysis is proposed, in which a trench angle parameter is added. The proposed method is validated using the TCAD simulation tool.
Lee, Woojin,Kim, Tae Hyung,Choa, Yong-Ho Materials Research Society of Korea 2016 한국재료학회지 Vol.26 No.8
A multi-step deposition process for the gap-filling of submicrometer trenches using dimethyldimethoxysilane (DMDMOS), $(CH_3)_2Si(OCH_3)_2$, and $C_xH_yO_z$ by plasma enhanced chemical vapor deposition (PECVD) is presented. The multi-step process consisted of pre-treatment, deposition, and post-treatment in each deposition step. We obtained low-k films with superior gap-filling properties on the trench patterns without voids or delamination. The newly developed technique for the gap-filling of submicrometer features will have a great impact on inter metal dielectric (IMD) and shallow trench isolation (STI) processes for the next generation of microelectronic devices. Moreover, this bottom up gap-fill mode is expected to be universally for other chemical vapor deposition systems.
Gap-Fill Characteristics and Film Properties of DMDMOS Fabricated by an F-CVD System
Lee, Woojin,Fukazawa, Atsuki,Choa, Yong-Ho Materials Research Society of Korea 2016 한국재료학회지 Vol.26 No.9
The deposition process for the gap-filling of sub-micrometer trenches using DMDMOS, $(CH_3)_2Si(OCH_3)_2$, and $C_xH_yO_z$ by flowable chemical vapor deposition (F-CVD) is presented. We obtained low-k films that possess superior gap-filling properties on trench patterns without voids or delamination. The newly developed technique for the gap-filling of submicrometer features will have a great impact on IMD and STI for the next generation of microelectronic devices. Moreover, this bottom up gap-fill mode is expected to be universal in other chemical vapor deposition systems.
Trench Filling Properties of Low k Insulated Layer Using Vacuum Ultraviolet Light-CVD
Lee, Woo-Jin,Fukuda, Hideaki,Kim, Tae Hyung,Choa, Yong-Ho The Electrochemical Society 2016 ECS journal of solid state science and technology Vol.5 No.6
<P>Photo-induced deposition of SiOCH thin films and their trench filling properties are discussed. Octamethyl-cycloterasiloxan (OMCTS) was used as a precursor and Xe-2 excimer lamp was used as a light source. The deposition temperature was 80 degrees C and the reactor pressure was maintained at 38.5 Pa. The relative permittivity of as-deposited film was 7.9. Due to the UV cure process, those OH-related bonds in the film were significantly decreased. The k-value of the UV cure film was 2.1. Photo-induced SiOCH was employed to achieve bottom-up filling of high-aspect-ratio features (A/S > 7.5). (C) 2016 The Electrochemical Society. All rights reserved.</P>
장용채(Yong chai Chang),박종철(Jong cheol Park) 한국지반신소재학회 2012 한국지반신소재학회 학술발표회 Vol.2012 No.11
The safety rate according to the location change of the trench crossing the soft ground counterweight fill can be interpreted. Here, the recording safety rate in which the soft ground depth will become intense the height of the dam body will be enhanced reduces. And the circular slip boundary line of the dam body is formed in the location which the safety rate reduces drastically and the common-point has to avoid the establishment of the transverse direction trench in the circular slip boundary line location.
Reduction of train-induced vibrations on adjacent buildings
Hung, Hsiao-Hui,Kuo, Jenny,Yang, Yeong-Bin Techno-Press 2001 Structural Engineering and Mechanics, An Int'l Jou Vol.11 No.5
In this paper, the procedure for deriving an infinite element that is compatible with the quadrilateral Q8 element is first summarized. Enhanced by a self mesh-expansion procedure for generating the impedance matrices of different frequencies for the region extending to infinity, the infinite element is used to simulate the far field of the soil-structure system. The structure considered here is of the box type and the soils are either homogeneous or resting on a bedrock. Using the finite/infinite element approach, a parametric study is conducted to investigate the effect of open and in-filled trenches in reducing the structural vibration caused by a train passing nearby, which is simulated as a harmonic line load. The key parameters that dominate the performance of wave barriers in reducing the structural vibrations are identified. The results presented herein serve as a useful guideline for the design of open and in-filled trenches concerning wave reduction.