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( Jeong-Chan Jin ),( Young-Jin Kim ) 한국인터넷정보학회 2017 KSII Transactions on Internet and Information Syst Vol.11 No.12
In thin-film transistor liquid-crystal displays (TFT-LCDs), which are most commonly used in mobile devices, the backlight accounts for about 70% of the power consumption. Therefore, most low-power-related studies focus on realizing power savings through backlight dimming. Image compensation is performed to mitigate the visual distortion caused by the backlight dimming. Therefore, popular techniques include pixel compensation for brightness recovery and contrast enhancement, such as histogram equalization. However, existing pixel compensation techniques often have limitations with respect to blur owing to the pixel saturation phenomenon, or because contrast enhancement cannot adequately satisfy the human visual system (HVS). To overcome these, in this study, we propose a novel dimming technique to achieve both power saving and HVS-awareness by combining the pixel compensation and histogram specifications, which convert the original cumulative density function (CDF) by designing and using the desired CDF of an image. Because the process of obtaining the desired CDF is customized to consider image characteristics, histogram specification is found to achieve better HVS-awareness than histogram equalization. For the experiments, we employ the LIVE image database, and we use the structural similarity (SSIM) index to measure the degree of visual satisfaction. The experimental results show that the proposed technique achieves up to 15.9% increase in the SSIM index compared with existing dimming techniques that use pixel compensation and histogram equalization in the case of the same low-power ratio. Further, the results indicate that it achieves improved HVS-awareness and increased power saving concurrently compared with previous techniques.
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T. K. Hong,H. J. Park,D. M. Han,K. H. Jeong,C. S. Kim,C. O. Jeong,J. H. Lee,D. H. Kim,이은구,H. S. Soh,이재갑 한국물리학회 2009 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.54 No.5
Self-passivated copper as a gate electrode in the form of TiOxNy/Cu/Ti/SiO2 has been obtained by exposing Cu/Ti/SiO2 to mixed of N2/H2 plasma at a low temperature of 300℃. The use of the plasma provides an additional surface heating source, allowing the Ti atoms to outdiffuse to the Cu surface at 300℃ and to react to form a passivation layer on the surface. The H2 plasma transforms the Ti layer into titanium hydride, which effectively inhibits the Cu-Ti reaction and serves as a diffusion barrier against Cu metallization. The TiNxOy/Cu/Ti/SiO2 multilayer formed at the low temperature can be used as a gate electrode in thin-film transistor liquid crystal displays (TFT-LCDs) and exhibits a gate voltage swing of 0.943 V/decade, a threshold voltage of -1.07 V, a mobility of 0.669 cm2/V-s and a Ion/Ioff ratio of 8.18×106. Consequently, this low- temperature plasma processing will allow a reliable passivated gate electrode, which can be utilized in low-temperature amorphous Si thin-film transistor liquid crystal displays, to be formed.
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Mo 하지층의 첨가원소(Ti) 농도에 따른 Cu 박막의 특성
홍태기,이재갑,Hong, Tae-Ki,Lee, Jea-Gab 한국재료학회 2007 한국재료학회지 Vol.17 No.9
Mo(Ti) alloy and pure Cu thin films were subsequently deposited on $SiO_2-coated$ Si wafers, resulting in $Cu/Mo(Ti)/SiO_2$ structures. The multi-structures have been annealed in vacuum at $100-600^{\circ}C$ for 30 min to investigate the outdiffusion of Ti to Cu surface. Annealing at high temperature allowed the outdiffusion of Ti from the Mo(Ti) alloy underlayer to the Cu surface and then forming $TiO_2$ on the surface, which protected the Cu surface against $SiH_4+NH_3$ plasma during the deposition of $Si_3N_4$ on Cu. The formation of $TiO_2$ layer on the Cu surface was a strong function of annealing temperature and Ti concentration in Mo(Ti) underlayer. Significant outdiffusion of Ti started to occur at $400^{\circ}C$ when the Ti concentration in Mo(Ti) alloy was higher than 60 at.%. This resulted in the formation of $TiO_2/Cu/Mo(Ti)\;alloy/SiO_2$ structures. We have employed the as-deposited Cu/Mo(Ti) alloy and the $500^{\circ}C-annealed$ Cu/Mo(Ti) alloy as gate electrodes to fabricate TFT devices, and then measured the electrical characteristics. The $500^{\circ}C$ annealed Cu/Mo($Ti{\geq}60at.%$) gate electrode TFT showed the excellent electrical characteristics ($mobility\;=\;0.488\;-\;0.505\;cm^2/Vs$, on/off $ratio\;=\;2{\times}10^5-1.85{\times}10^6$, subthreshold = 0.733.1.13 V/decade), indicating that the use of Ti-rich($Ti{\geq}60at.%$) alloy underlayer effectively passivated the Cu surface as a result of the formation of $TiO_2$ on the Cu grain boundaries.
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