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Hojin Kang,Yongjae Kim,Junhyun Kim,Heeyeop Chae 한국진공학회 2021 한국진공학회 학술발표회초록집 Vol.2021 No.2
High selective etching process precision control is required in semiconductor devices. Perfluorocarbon compounds have intrinsic global warming issue. In this work, reactive ion etching process was conducted for SiO<sub>2</sub> and a-C in a dual frequency superimposed capacitively coupled plasmas (DFS-CCPs) reactor with C<sub>4</sub>H<sub>3</sub>F<sub>7</sub>O ether and alcohol plasmas. The etch rate and radical density showed that ether was higher than alcohol. Selectivity was superior when the low frequency power ratio was higher than high frequency power ratio.