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        Three-Dimensional Simulation Study of the Improved On/Off Current Ratio in Silicon Nanowire Field-Effect Transistors

        구상모,최창용,조원주,김상식,Qiliang Li,John S. Suehle,Curt A. Richter,Eric M. Vogel 한국물리학회 2008 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.53 No.3

        In this paper, we report an approach based on three-dimensional numerical simulations for the investigation of the dependence of the on/off current ratio in silicon nanowire (SiNW) field-effect transistors (FETs) on the channel width. In order to investigate the transport behavior in devices with different channel geometries, we have performed detailed two-dimensional and three-dimensional simulations of SiNWFETs and control FETs with a fixed channel length L and thickness t but varying the channel width W from 5 nm and 5 μm. By evaluating the charge distributions and the current flowlines of both the two- and three-dimensional structures, we have shown that the increase in the `on state' conduction current in the SiNW channel is a dominant factor, which consequently results in more than a two order of magnitude improvement in the on/off current ratio. In this paper, we report an approach based on three-dimensional numerical simulations for the investigation of the dependence of the on/off current ratio in silicon nanowire (SiNW) field-effect transistors (FETs) on the channel width. In order to investigate the transport behavior in devices with different channel geometries, we have performed detailed two-dimensional and three-dimensional simulations of SiNWFETs and control FETs with a fixed channel length L and thickness t but varying the channel width W from 5 nm and 5 μm. By evaluating the charge distributions and the current flowlines of both the two- and three-dimensional structures, we have shown that the increase in the `on state' conduction current in the SiNW channel is a dominant factor, which consequently results in more than a two order of magnitude improvement in the on/off current ratio.

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