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RISS 인기검색어
- 검색키워드
- 주제어 : RPALD (검색결과 3 건)
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윤형선,김광호 한국물리학회 2009 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.54 No.2
Al2O3 thin films were deposited on GaN (0001) by using a remote-plasma atomic-layer- deposition (RPALD) technique with a trimethylaluminum(TMA) precursor and oxygen radicals in the temperature range of 25 ~ 500℃. The growth rate per cycle was varied with the substrate temperature from 1.8 A/cycle at 25℃ to 0.8A/cycle at 500℃. The chemical structure of the Al2O3 thin films was studied using X-ray photoelectron spectroscopy (XPS). The electrical properties of Al2O3/GaN Metal-Insulator-Semiconductor (MIS) capacitor grown at a 300℃ process temperature were excellent, a low electrical leakage current density (~10-10 A/cm2 at 1 MV) at room temperature and a high dielectric constant of about 7 with a thinner oxide thickness of 12 nm. The interface trap density (Dit) was estimated using a high-frequency C-V method measured at 300℃. These results show that the RPALD technique is an excellent choice for depositing high-quality Al2O3 as a gate dielectric in GaN-based devices. Al2O3 thin films were deposited on GaN (0001) by using a remote-plasma atomic-layer- deposition (RPALD) technique with a trimethylaluminum(TMA) precursor and oxygen radicals in the temperature range of 25 ~ 500℃. The growth rate per cycle was varied with the substrate temperature from 1.8 A/cycle at 25℃ to 0.8A/cycle at 500℃. The chemical structure of the Al2O3 thin films was studied using X-ray photoelectron spectroscopy (XPS). The electrical properties of Al2O3/GaN Metal-Insulator-Semiconductor (MIS) capacitor grown at a 300℃ process temperature were excellent, a low electrical leakage current density (~10-10 A/cm2 at 1 MV) at room temperature and a high dielectric constant of about 7 with a thinner oxide thickness of 12 nm. The interface trap density (Dit) was estimated using a high-frequency C-V method measured at 300℃. These results show that the RPALD technique is an excellent choice for depositing high-quality Al2O3 as a gate dielectric in GaN-based devices.
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Kwang-Ho Kim,Hyun-Jun Kim,Pyungwoo Jang,Chisup Jung,Kyu Seomoon,서문규 대한금속·재료학회 2011 ELECTRONIC MATERIALS LETTERS Vol.7 No.2
Low-temperature-deposited aluminium oxide (Al_2O_3) thin films were grown on p-type Si substrates by the remote plasma atomic layer deposition (RPALD) technique. The RPALD technique uses an alternative trimethylaluminum precursor and oxygen radicals to obtain good interface properties for metal-insulatorsemiconductor (MIS) inversion-layer solar cell applications. Si MIS capacitors with ultra-thin Al_2O_3 (film thickness ranges from 1 nm to 6 nm) gate dielectric and SiNx films were fabricated at 300°C and at room temperature (RT), respectively. Low-temperature-deposited Al_2O_3 and SiNx films were characterized by electrical properties such as capacitance-voltage (C-V), and current-voltage (I-V). The interface state density (Dit) of the MIS capacitors with SiNx films and without SiNx films was derived from the 1 MHz frequency C-V curves. By using ultra-thin RPALD Al_2O_3, RT-sputtered SiNx films and a simple fabrication-processing sequence, MIS solar cells were fabricated on 1 Ω·cm to 10 Ω·cm p-Si wafers. The fabricated MIS solar cell with passivated Al_2O_3 and SiNx films has 8.21% efficiency.
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산화알루미늄 박막의 두께 및 열처리 온도에 따른 Al<sub>2</sub>O<sub>3</sub>/GaN MIS 구조의 전기적 특성 변화
곽노원,이우석,김가람,김현준,김광호,Kwak, No-Won,Lee, Woo-Seok,Kim, Ka-Lam,Kim, Hyun-Jun,Kim, Kwang-Ho 한국전기전자재료학회 2009 전기전자재료학회논문지 Vol.22 No.6
We deposited $Al_2O_3$ thin films on GaN by remote plasma atomic layer deposition (RPALD) technique, trimethylaluminum(TMA) and oxygen were used as precursors, at fixed process condition, the number of cycle were changed. Growth rate per cycle was $1.2\;{\AA}$/cycle. and Growth rate was in proportion to a number of cycle, the GaN MIS capacitors that $Al_2O_3$ thin film were deposited above 12 nm, have excellent electrical properties, a low electrical leakage current density(${\sim}10^{-10}\;A/cm^2$ at 1.5 MV), but below 12 nm, we can see the degradation of the leakage current density. After post deposition annealing, Dielectric constant was estimated by 1 MHz high-frequency C-V method, it was varied with the anealing temperature from 6.9 at no post anealed to 7.6 at $800^{\circ}C$, and we can see a improvement of the leakage current density and breakdown voltage by post deposition anealing below $700^{\circ}C$, but, after anealed at $800^{\circ}C$, we can see the degradation of the leakage current density and breakdown voltage.
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