ZnO박막의 전자적 및 구조적 특성

최은혜,김겸룡,손이슬,강희재,양동석,박남석 한국물리학회 2010 새물리 Vol.60 No.6

ZnO thin films were deposited on Si and glass substrates by using RF sputtering method and changing the ratio of oxygen to argon gases. The electronic and the structural properties of the thin films were studied by using X-ray Photoelectron Spectroscopy (XPS), Reflection Electron Energy Loss Spectroscopy (REELS), and Extended X-ray Absorption Fine Structure (EXAFS). The electronic and the structural properties of ZnO thin films were shown not to depend on the substrate. The optical properties of the ZnO thin films were obtained by quantitatively analying the REELS spectra. The transmission of the ZnO thin films was shown to be higher than 90 %at 400 nm. ZnO박막을 RF 스퍼터링 증착법으로 아르곤과 산소 가스의 비를 변화시켜가면서 Si과 유리 기판위에 증착하여, 가스의 변화 및 기판에 따른ZnO박막의 특성을 연구 하였다. XPS, REELS와 EXAFS를 통하여 분석한결과 ZnO박막이 산소와 기판에 크게 영향을 받지 않음을 알 수 있었다. 또한 REELS에 의한 광학적 특성 분석 결과 가시광선 영역대인 400 nm 이상의 파장에서 90 %이상의 투과율을 보였으며 이는 ZnO박막이 투명박막 소자의 요건을 갖추고 있다는 결과를 나타낸다.

Mn이 첨가된 ZnO 시료 및 박막의 구조 및 자기적 특성

박광호,이은경,김겸룡,최은혜,강희재,박남석 한국물리학회 2009 New Physics: Sae Mulli Vol.58 No.6

Pulsed laser dyosition (PLD) targets were made from ZnO(99.999%) and Mn(99.95%) powders. Mn:ZnO thin films were grown on sapphire by using PLD method. The X-ray diffraction patterns of the Mn:ZnO targets indicated a polycrystalline structure, but the Mn:ZnO thin films indicated a ZnO (002) structure. The magnetic behaviors of the Mn:ZnO targets and thin films were measured at temperatures from 5 K to 340 K by using SQUID magnetometer. For all Mn:ZnO targets and thin films, ferromagnetism was observed at room temperature, even though paramagnetism contributed mainly to the total magnetic moment. The thin film grown at the substrate temperature of 700 ℃ by using Mn:ZnO with 5-at% Mn showed the strongest ferromagnetism and Reflection Electron Energy Loss Spectroscopy (REELS) measurements should the band gap to be about 3.0±0.1 eV. ZnO(99.999%)와 Mn(99.95%)으로 Mn:ZnO 타겟을 제조하였으며, 이 타겟을 사용하여 PLD법으로 사파이어 위에 박막을 성장시켰다. 타겟에서 측정한 XRD 결과에서는 다결정 특성이 관측되었으나, 박막에는 주로 c-축으로 성장이 됨을 관측하였다. 자성특성과 자기저항은 SQUID를 사용하여 5 K에서 340 K까지 변화시키면서 측정하였다. Mn:ZnO의 타겟 및 박막 시료들은 실온에서 상자성이 주로 기여하고 있으며, 동시에 강자성특성도 관측하였다. 타겟 시료의 Mn:ZnO에서 Mn의 양이 5 at{\%}인 타겟으로 기판온도 700℃로 제작한 박막시료에서 가장 강한 강자성특성을 나타내었다. 이를 AES 깊이분포도 측정 결과, Mn의 조성비는 약 5 at%로 깊이에 따라 일정하게 분포되었으며, REELS로 측정한 박막의 밴드 갭은 약 3.0 ± 0.1 eV로 나타내었다.

Examining the Attractiveness of Reels Travel Videos and Their Influence on Travel Inspiration

에이맛뜨진,구철모 한국경영정보학회 2024 Information systems review Vol.26 No.3

In today’s digital age, Instagram's Reels, exert substantial influence as the primary channel in the decision-making process of potential travelers. A conceptual framework integrating Reels travel videos’ features and inspiration theory was utilized to explore this phenomenon thoroughly. Employing Wang and Strong’s Information Quality framework, we examined content cues - relevancy, interestingness, and trendiness of Reels travel content, as well as non-content cues, including video editing design. Additionally, as an independent variable influencing the core attractiveness of Reels travel content, destination attractiveness, including destination reputation, novelty, and aesthetic value, was analyzed. The framework incorporates two-order constructs of inspiration theory: inspired-by and inspired-to. Findings from an online survey involving 383 young American Instagram users revealed that destination reputation, content novelty, and video editing design all have a significant influence on travel intentions via a two-order inspiration state. By appealing to the emotional and aspirational desires of viewers, Reels travel content becomes a powerful marketing tool. This study not only advances academic understanding but also offers valuable takeaways for marketers and content creators in order to enhance the potential travelers’ perceptions of destinations, and ultimately influence their travel choices by emphasizing the importance of recognizing and leveraging Reels travel videos’ attractiveness

Electronic and optical properties of GIZO thin film grown on SiO₂/Si substrates

Tahir, Dahlang,Lee, Eun Kyoung,Kwon, Hyuk Lan,Kun Oh, Suhk,Kang, Hee Jae,Heo, Sung,Lee, Eun Ha,Chung, Jae Gwan,Lee, Jae Cheol,Tougaard, Sven John Wiley Sons, Ltd. 2010 Surface and interface analysis Vol.42 No.6

<P>The electronic and optical properties of GaInZnO (GIZO) thin films grown on SiO<SUB>2</SUB>/Si by r.f. magnetron sputtering were obtained by means of XPS and reflection electron energy loss spectroscopy (REELS). The optical properties represented by the dielectric function ϵ, refractive index n, extinction coefficient k and transmission coefficient T of GIZO thin films were obtained from a quantitative analysis of the REELS spectra. When the concentration ratios of Ga:In:Zn in GIZO thin films are 1:1:1, 2:2:1, 3:2:1 and 4:2:1, the bandgap values are 3.2, 3.2, 3.4 and 3.6 eV, respectively. The optical properties were determined from the energy loss of the REELS spectra by using quantitative analysis of electron energy loss spectra (QUEELS)-ϵ(k, ω)-REELS software. The optical properties depend on the Ga concentration, and the transmission in the visible region improved with increasing Ga concentration in GIZO. Copyright © 2010 John Wiley & Sons, Ltd.</P>

실리콘 태양전지에서 Al2O3과 Ta2O5/Al2O3 패시베이션 박막의 전자구조 특성

김규식,강병원,강희재,박남석 한국물리학회 2017 새물리 Vol.67 No.6

In order to investigate the density of positive charge in a crystalline-silicon solar-cell passivation layer, we used X-ray photoelectron spectroscopy (XPS), reflection electron energy loss spectroscopy (REELS), and ultraviolet photoelectron spectroscopy (UPS) to study the properties of the electronic structures of Al$_2$O$_3$(AlO) and Ta$_2$O$_5$(TaO)/Al$_2$O$_3$ deposited as passivation layers on Si substrates. REELS results showed that the band gaps of the AlO/Si and the TaO/AlO/Si thin films were 6.63 eV and 4.26 eV, respectively. UPS results showed that the values of the work functions of the AlO/Si and the TaO/AlO/Si thin films were 5.54 eV and 5.91 eV, respectively. The flat-band voltage obtained from the capacitance and voltage characteristics increased from 0.72 V in the AlO/Si thin-film sample to 1.0 V in the TaO/AlO/Si thin-film sample, which means an increase in the density of positive charge. Also, the change in the flat-band voltage was confirmed to follow the same trend as the change in the work function. 결정질 실리콘 태양전지 패시베이션 박막에 대전된 양전하의 밀집도를 알아보기 위하여, 단결정 Si 기판 위에 Al$_2$O$_3$, Ta$_2$O$_5$를 증착한 후, 박막의 전자구조 특성을 광전자분광법 (X-ray Photoelectron Spectroscopy, XPS), 반사전자에너지손실분광법 (Reflection Electron Energy Loss Spectroscopy, REELS) 및 자외선 광전자 분광법 (Ultraviolet Photoelectron spectroscopy, UPS)을 사용하여 연구하였다. AlO/Si 박막시료의 띠틈은 6.63 eV로 나타났으며 TaO/AlO/Si 박막시료의 띠틈은 4.26 eV로 나타났다. UPS를 이용하여 측정한 AlO/Si 박막시료의 일함수는 5.54 eV로 나타났으며, TaO/AlO/Si 박막시료의 경우에는 5.91 eV로 나타났다. 플랫밴드 전압은 AlO/Si 박막 시료에서 0.72 V, TaO/AlO/Si 박막시료에서 1.0 V로 증가하며, 이러한 증가는 양전하의 밀집도 증가를 의미한다. 또한 플랫밴드 전압의 변화가 일함수의 변화와 동일한 경향을 가짐을 확인하였다.

AlN를 도핑시킨 ZnO박막의 전기적 및 전자적 특성

손이슬,김겸룡,이강일,강희재,박남석 한국물리학회 2011 새물리 Vol.61 No.6

For high-quality p-type ZnO thin films, AlN co-doped ZnO thin films were grown by using a RF magnetron co-sputtering system with ambient Ar and O₂gases. In the XPS measurement, the binding energy peak of the Zn2p_(3/2) and O1s for the AlN-doped ZnO thin films was lower than that of the undoped ZnO thin film. The AlN-doped ZnO thin film grown at 200℃ exhibited p-type semiconductor with a high hall concentration of 1.37×10^(18)cm^(-3), a mobility of 776 cm²/Vs and a low resistivity of 5.86×10^(-3)Ω‧m. For the undoped ZnO thin film and the AlN-doped thin film grown at a temperature of 600℃, which exhibited characteristics of an N-type semiconductor, no nitrogen atoms were measured in the SIMS depth profile while for the AlN-doped ZnO thin films grown at room temperature, 200℃and 400℃, which exhibited the characteristics of a p-type semiconductor, nitrogen atoms were measured in the SIMS depth profile. Thus, we conclude that nitrogen atoms doped in ZnO thin films play an important role in the p-type semiconductor nature of AlN-doped ZnO thin films. 고품질의 p-형 ZnO박막을 제작하기 위해 AlN를 도핑시킨 ZnO박막을 RF 마그네트론 스퍼터링 법을 이용하여 Ar과 O₂분위기에서 성장시켰다. XPS측정결과, AlN를 도핑시킨 ZnO박막의 Zn2p_(3/2)와 O1s피크는도핑을 시키지 않은 ZnO박막의 피크보다 낮은 결합에너지에서측정되었다. 박막의 홀 측정 결과, 기판을 200℃로 가열하면서성장시킨 박막이 p-형을 나타내었으며, 비저항이 5.86×10^(-3)Ω‧m, 캐리어 농도가 1.37×10^(18)cm^(-3), 이동도가 776 cm²/Vs이었다. SIMS의 측정결과 N이 포함된박막에서는 p-형 반도체 특성을 나타내며, N이 포함되지 않은 박막에서는n-형 반도체 특성을 나타내었다.

유리기판에 O2 플라즈마 표면처리 후 제작된 ITO 박막의 특성

채홍철 ( Hong Chol Chae ),홍주화 ( Joo Wha Hong ) 대한금속재료학회 ( 구 대한금속학회 ) 2012 대한금속·재료학회지 Vol.50 No.7

The optical and electronic properties of Indium Tin Oxide (ITO) thin films deposited on a RFplasma treated glass substrate were investigated by X-Ray Photoelectron Spectroscopy (XPS), Ultra-violet Photoelectron Spectroscopy (UPS), Reflected Electron Energy Loss Spectroscopy (REELS). The modification of glass substrates was carried out by varying the time of the plasma surface treatment in an oxygen atmosphere. The focus of this research was to examine how the optical and electronic properties of ITO thin films change with the plasma treatment time. The surface energy increased since the carbon bonds were removed from the surface after the glass substrate received the surface treatment. The ITO thin films produced on the glass substrate with surface treatment showed that the high optical transmittance was approximately 85%. The measured band gap energy was as high as 3.23 eV when the plasma treatment time was 60 s and the work function after the treatment was increased by 0.5 eV in comparison to that before the treatment of 60 s. The ITO thin film exhibited an excellent sheet resistance of 2.79 Ω/□. We found that the optical and electronic properties of ITO thin films can be improved by RF-plasma surface treatment.

MgO 박막의 전자 특성

이상수,유스 라마 데니,이선영,이강일,강희재,박남석 한국물리학회 2012 새물리 Vol.62 No.5

In an AC-PDP (Alternating Current-Plasma Display Panel), a MgO thin film has been used as a protective layer in the discharge cell of the PDP because of its high secondary electron emission. In this work, the electronic properties of MgO thin films grown on Si substrates by using electron beam evaporation were investigated by using X-ray photoelectron spectroscopy (XPS), Reflection electron energy loss spectroscopy (REELS) and ultra violet photoelectron spectroscopy (UPS). MgO thin films grown at room temperature showed F-center defect states due to oxygen vacanc, which were not observed in the MgO thin films grown at 300℃. The band gap obtained for MgO thin films grown at 300℃ was 7.5 eV in both the surface and the bulk while the band gaps obtained for MgO thin film growns at room temperature were 5.9 eV in the surface and 7.5 eV in the bulk. The work functions of the MgO thin films grown at room temperature and 300 ℃ were 4.7 eV and 5.2 eV, respectively. AC-PDP(Alternating Current-Plasma Display Panel) 에서 MgO 박막은이차 전자 방출이 높고 이온 스퍼터링에 의한 표면 손상이 적어보호막으로 이용된다. 이번 연구에서 전자 빔 증착 방식으로 Si 기판위에 MgO 박막을 성장시킨 후, 전자 특성을 XPS, REELS, UPS 실험을통하여 측정하였다. 실온에서 성장한 박막에서는 산소의 결함에 의한F-Center의 준위가 관찰되었으나, 시료를 300 ℃이상에서 가열한것으로 인해 F-Center의 준위가 사라지는 것이 관찰되었다. 실온에서성장시킨 박막의 경우 표면과 내부에서 띠틈은 각각 5.9 eV와 7.5eV이며, 일함수는 4.7 eV이다. 한편 300 ℃에서 성장시킨박막에서 표면과 내부에서 조성비가 균질하며, 띠틈은 7.5 eV 이며,일함수는 5.2 eV 이다.

Electronic, Optical and Electrical Properties of Nickel Oxide Thin Films Grown by RF Magnetron Sputtering

Park, Chanae,Kim, Juhwan,Lee, Kangil,Oh, Suhk Kun,Kang, Hee Jae,Park, Nam Seok The Korean Vacuum Society 2015 Applied Science and Convergence Technology Vol.24 No.3

Nickel oxide (NiO) thin films were grown on soda-lime glass substrates by RF magnetron sputtering method at room temperature (RT), and they were post-annealed at the temperatures of $100^{\circ}C$, $200^{\circ}C$, $300^{\circ}C$ and $400^{\circ}C$ for 30 minutes in vacuum. The electronic structure, optical and electrical properties of NiO thin films were investigated using X-ray photoelectron spectroscopy (XPS), reflection electron energy spectroscopy (REELS), UV-spectrometer and Hall Effect measurements, respectively. XPS results showed that the NiO thin films grown at RT and post annealed at temperatures below $300^{\circ}C$ had the NiO phase, but, at $400^{\circ}C$, the nickel metal phase became dominant. The band gaps of NiO thin films post annealed at temperatures below $300^{\circ}C$ were about 3.7 eV, but that at $400^{\circ}C$ should not be measured clearly because of the dominance of Ni metal phase. The NiO thin films post-annealed at temperatures below $300^{\circ}C$ showed p-type conductivity with low electrical resistivity and high optical transmittance of 80% in the visible light region, but that post-annealed at $400^{\circ}C$ showed n-type semiconductor properties, and the average transmittance in the visible light region was less than 42%. Our results demonstrate that the post-annealing plays a crucial role in enhancing the electrical and optical properties of NiO thin films.

Electronic, Optical and Electrical Properties of Nickel Oxide Thin Films Grown by RF Magnetron Sputtering

Chanae Park,Juhwan Kim,Kangil Lee,Suhk Kun Oh,Hee Jae Kang,Nam Seok Park 한국진공학회(ASCT) 2015 Applied Science and Convergence Technology Vol.24 No.3

Nickel oxide (NiO) thin films were grown on soda-lime glass substrates by RF magnetron sputtering method at room temperature (RT), and they were post-annealed at the temperatures of 100℃, 200℃, 300℃ and 400℃ for 30 minutes in vacuum. The electronic structure, optical and electrical properties of NiO thin films were investigated using X-ray photoelectron spectroscopy (XPS), reflection electron energy spectroscopy (REELS), UV-spectrometer and Hall Effect measurements, respectively. XPS results showed that the NiO thin films grown at RT and post annealed at temperatures below 300℃ had the NiO phase, but, at 400℃, the nickel metal phase became dominant. The band gaps of NiO thin films post annealed at temperatures below 300℃ were about 3.7 eV, but that at 400oC should not be measured clearly because of the dominance of Ni metal phase. The NiO thin films post-annealed at temperatures below 300℃ showed p-type conductivity with low electrical resistivity and high optical transmittance of 80% in the visible light region, but that post-annealed at 400℃ showed n-type semiconductor properties, and the average transmittance in the visible light region was less than 42%. Our results demonstrate that the post-annealing plays a crucial role in enhancing the electrical and optical properties of NiO thin films.