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RISS 인기검색어
- 검색키워드
- 주제어 : Pulsed CVD (검색결과 6 건)
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Jiheon Ryu,Hae-Ok Kwon,Seung Hyuk Park,Dong Woo Yim IEEE 2016 IEEE transactions on instrumentation and measureme Vol.65 No.3
<P>This paper presents a square patch capacitive voltage divider (CVD) for measuring high-voltage ultrawideband pulses in a coaxial pulse forming line. The dimension parameters and the sensitivity factor of the CVD are expressed as functions of the low-frequency cutoff and the high-frequency cutoff of the pulse waveform via a theoretical analysis in frequency domain. A coaxial line integrated with a square patch CVD is designed, manufactured, and tested. A 1.3-ns bipolar pulse is measured by the CVD. The experimental results demonstrated that the waveform measured by the CVD was nearly identical to the reference waveform and the error of the maximum amplitude was 2.1%.</P>
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Shaoming Dong,Haiming Wen,Qing Zhou,Yusheng Ding 한양대학교 세라믹연구소 2009 Journal of Ceramic Processing Research Vol.10 No.3
Single-layer SiC coatings and multilayer (C/SiC)n coatings for oxidation protection of C/SiC composites were prepared by a pulsed chemical vapor deposition (pulsed CVD) method, a modification of pulsed chemical vapor infiltration (pulsed CVI). Pulsed CVD enabled the original pores in the substrates to be filled by the coatings, which contributed to improved adhesion between the coatings and the substrates. No deposition defects were observed in the dense SiC coatings. Multilayer (C/SiC)n coatings could dissipate thermal stresses in the coatings, which reduced the number and width of micro-cracks in the coatings and accordingly improved the oxidation-protection capability of the coatings. Oxidation tests in dry air showed that the oxidation resistance of the coated composites was significantly improved compared with that of the uncoated ones. Single-layer SiC coatings and multilayer (C/SiC)n coatings for oxidation protection of C/SiC composites were prepared by a pulsed chemical vapor deposition (pulsed CVD) method, a modification of pulsed chemical vapor infiltration (pulsed CVI). Pulsed CVD enabled the original pores in the substrates to be filled by the coatings, which contributed to improved adhesion between the coatings and the substrates. No deposition defects were observed in the dense SiC coatings. Multilayer (C/SiC)n coatings could dissipate thermal stresses in the coatings, which reduced the number and width of micro-cracks in the coatings and accordingly improved the oxidation-protection capability of the coatings. Oxidation tests in dry air showed that the oxidation resistance of the coated composites was significantly improved compared with that of the uncoated ones.
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Rapid-Thermal Pulse 화학증착법에 의해 증착된 그래핀 박막에서 촉매금속 Ni의 두께 및 열처리 조건의 영향
나신혜,윤순길,Na, Sin-Hye,Yoon, Soon-Gil 한국재료학회 2011 한국재료학회지 Vol.21 No.2
Mono- and few-layer graphenes were grown on Ni thin films by rapid-thermal pulse chemical vapor deposition technique. In the growth steps, the exposure step for 60 s in $H_2$ (a flow rate of 10 sccm (standard cubic centimeters per minute)) atmosphere after graphene growth was specially established to improve the quality of the graphenes. The graphene films grown by exposure alone without $H_2$ showed an intensity ratio of $I_G/I_{2D}$ = 0.47, compared with a value of 0.38 in the films grown by exposure in H2 ambient. The quality of the graphenes can be improved by exposure for 60 s in $H_2$ ambient after the growth of the graphene films. The physical properties of the graphene films were investigated for the graphene films grown on various Ni film thicknesses and on 260-nm thick Ni films annealed at 500 and $700^{\circ}C$. The graphene films grown on 260-nm thick Ni films at $900^{\circ}C$ showed the lowest $I_G/I_{2D}$ ratio, resulting in the fewest layers. The graphene films grown on Ni films annealed at $700^{\circ}C$ for 2 h showed a decrease of the number of layers. The graphene films were dependent on the thickness and the grain size of the Ni films.
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Age at Menarche and Brachial-ankle Pulse Wave Velocity in Women with Metabolic Syndrome
Yoon-Kyung Jo,Jee-Aee Im 대한의생명과학회 2009 Biomedical Science Letters Vol.15 No.1
Early age at menarche, which is indicator of early biological maturity, has been shown to be associated with increased adult body mass index. Early menarche has also been associated with many cardiovascular disease risk factors and metabolic syndrome. To evaluate the impact of menarche to cardiovascular risk factor, we assessed by age at menarche, brachial-ankle pulse wave velocity (baPWV), which represents arterial stiffness, in women with or without metabolic syndrome. The subjects recruited for this study were three hundred one women. Relatively early menarche and relatively late menarche were classified according to less than 50<SUP>th</SUP> percentile for relatively early menarche, and great than the 50<SUP>th</SUP> percentile for relatively late menarche. Subject were divided four group, 1) women who had not adulthood metabolic syndrome and relatively early menarche, 2) women who had not adulthood metabolic syndrome and relatively late menarche, 3) women who had adulthood metabolic syndrome and relatively early menarche, 4) women who had adulthood metabolic syndrome and relatively late menarche. Women who had a relatively early menarche with adulthood metabolic syndrome had significantly high levels of blood pressure, triglyceride, fasting insulin and homeostatic model assessment of insulin resistance (HOMA-IR) levels than women with late menarche with adulthood metabolic syndrome, and had significantly lower HDL-cholesterol levels. And also, women who underwent a relatively early menarche with metabolic syndrome had highest level of baPWV in adult. In this study we found effect of age at menarche on adulthood metabolic risk factors for cardiovascular disease (e.g., baPWV, insulin resistance, hyperlipidemia) in Korean women.
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그래핀 전극을 이용한 유연한 BMNO (Bi<sub>2</sub>Mg<sub>2/3</sub>Nb<sub>4/3</sub>O<sub>7</sub>) 캐패시터의 굽힘 특성
송현아,박병주,윤순길,Song, Hyun-A,Park, Byeong-Ju,Yoon, Soon-Gil 한국전기전자재료학회 2012 전기전자재료학회논문지 Vol.25 No.5
Graphene was fabricated onto Ni/Si substrate using a rapid-thermal pulse CVD and they were transferred onto the Ti/PES flexible substrate. For top electrode applications of the BMNO dielectric films, graphene was patterned using a argon plasma. Through an AFM image and a leakage current density of the BMNO films grown onto various bottom electrodes before and after bending test, BMNO films grown onto the graphene bottom electrode showed no change of the microstructure and the leakage current density after the bend.
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