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Dopant-dependence of one-step metal-induced dopant activation process in silicon
박진홍,정우식,유현용 한국물리학회 2012 Current Applied Physics Vol.12 No.3
We investigate dopant-dependence of low temperature dopant activation technique in a-Si featuring one-step metal-induced crystallization (MIC) to decrease resistivity of p+ and n+ Si films by forming NixSiy. Ni not only crystallizes p-type a-Si film but also facilitates activation of boron atoms in the a-Si during the crystallization at 500 ℃. However, phosphorus atoms are poorly activated because of the suppressed Ni-MIC rate in n-type a-Si. Finally, pþ/n and nþ/p junction diodes are demonstrated on single crystalline Si substrates by the low temperature dopant activation technique promising for high performance TFTs as well as transistors with an elevated S/D.
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Dopant-dependence of one-step metal-induced dopant activation process in silicon
Park, J.H.,Jung, W.S.,Yu, H.Y. Elsevier 2012 Current Applied Physics Vol.12 No.3
We investigate dopant-dependence of low temperature dopant activation technique in α-Si featuring one-step metal-induced crystallization (MIC) to decrease resistivity of p<SUP>+</SUP> and n<SUP>+</SUP> Si films by forming Ni<SUB>x</SUB>Si<SUB>y</SUB>. Ni not only crystallizes p-type α-Si film but also facilitates activation of boron atoms in the α-Si during the crystallization at 500 <SUP>o</SUP>C. However, phosphorus atoms are poorly activated because of the suppressed Ni-MIC rate in n-type α-Si. Finally, p<SUP>+</SUP>/n and n<SUP>+</SUP>/p junction diodes are demonstrated on single crystalline Si substrates by the low temperature dopant activation technique promising for high performance TFTs as well as transistors with an elevated S/D.
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