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RISS 인기검색어
- 검색키워드
- 주제어 : Neutral cluster beam deposition (NCBD) (검색결과 2 건)
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Organic devices based on pentacene and perylene by the neutral cluster beam deposition method
Oh, Jeong-Do,Shin, Eun-Sol,Kim, Dae-Kyu,Choi, Jong-Ho Elsevier 2016 Synthetic metals Vol.220 No.-
<P><B>Abstract</B></P> <P>In this study, on the basis of <I>p</I>-type pentacene and <I>n</I>-type <I>N,N</I> <B> <I>′</I> </B> <I>-</I>dioctyl-perylene-3,4,9,10-tetracarboxylic acid diimide (PTCDI-C8) organic field-effect transistors (OFETs) and two-input complementary NAND logic gates in the top-contact device configuration were produced and characterized. The organic active layers were deposited on hydroxyl-free polymethylmethacrylate (PMMA)-modified indium tin oxide (ITO) glass gate substrates by the neutral cluster beam deposition (NCBD) method. The morphological and structural properties of the organic semiconducting active layers on the PMMA substrates were examined using atomic force microscopy, X-ray diffraction and contact-angle goniometry. Based on the growth of high-quality, well-packed crystalline films on the PMMA dielectric-modified ITO gate substrates, the <I>p</I>- and <I>n</I>-type transistors exhibited hole and electron mobilities of 0.247 and 7.23×10<SUP>−2</SUP> cm<SUP>2</SUP>/Vs, respectively, in the air without encapsulation. The trap density and activation energy were also derived from the transport characteristics for the temperature dependence of the mobilities in the temperature range 20−300K for the first time. Because of the well balanced <I>p</I>- and <I>n</I>-type OFETs in the devices, the complementary metal-oxide semiconductor (CMOS) NAND logic circuits exhibited a high voltage gain and a large noise margin with slight hysteresis.</P> <P><B>Highlights</B></P> <P> <UL> <LI> Fabrication of organic transistors and NAND gate using neutral cluster beams. </LI> <LI> Good balance between component <I>p</I>- and <I>n</I>-type organic field-effect transistors. </LI> <LI> Hysteresis-free, fast-switching NAND gate with high gains under ambient conditions. </LI> </UL> </P> <P><B>Graphical abstract</B></P> <P>[DISPLAY OMISSION]</P>
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Kim, Dae-Kyu,Choi, Jong-Ho Elsevier 2018 Optical Materials Vol.76 No.-
<P><B>Abstract</B></P> <P>Herein is presented a comparative performance analysis of heterojunction organic-based light-emitting field-effect transistors (OLEFETs) with symmetric (Au only) and asymmetric (Au and LiF/Al) electrode contacts. The devices had a top source–drain contact with long-channel geometry and were produced by sequentially depositing <I>p</I>-type pentacene and <I>n</I>-type <I>N,N</I>′-ditridecylperylene-3,4,9,10-tetracarboxylic diimide (P13) using a neutral cluster beam deposition apparatus. The spectroscopic, structural and morphological properties of the organic thin films were examined using photoluminescence (PL) spectroscopy, X-ray diffraction (XRD) method, laser scanning confocal and atomic force microscopy (LSCM, AFM). Based upon the growth of high-quality, well-packed crystalline thin films, the devices demonstrated ambipolar field-effect characteristics, stress-free operational stability, and light emission under ambient conditions. Various device parameters were derived from the fits of the observed characteristics. The hole mobilities were nearly equal irrespective of the electrode contacts, whereas the electron mobilities of the transistors with LiF/Al drain electrodes were higher due to the low injection barrier. For the OLEFETs with symmetric electrodes, electroluminescence (EL) occurred only in the vicinity of the hole-injecting electrode, whereas for the OLEFETs with asymmetric electrodes, the emission occurred in the vicinity of both hole- and electron-injecting electrodes. By tuning the carrier injection and transport through high- and low-work function metals, the hole-electron recombination sites could be controlled. The operating conduction and light emission mechanism are discussed with the aid of EL images obtained using a charge-coupled device (CCD) camera.</P> <P><B>Highlights</B></P> <P> <UL> <LI> The OLEFETs demonstrated ambipolar characteristics and light emission in air. </LI> <LI> The operating light emission mechanisms are discussed with the aid of EL images. </LI> <LI> The electron mobilities of the OFETs with LiF/Al drain electrodes were improved. </LI> </UL> </P>
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