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- 주제어 : Nano electromechanical switch (검색결과 3 건)
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Mutually-Actuated-Nano-Electromechanical (MANEM) Memory Switches for Scalability Improvement
Ho Moon Lee,Woo Young Choi 대한전자공학회 2017 Journal of semiconductor technology and science Vol.17 No.2
Mutually-actuated-nano-electromechanical (MA-NEM) memory switches are proposed for scalability improvement. While conventional NEM memory switches have fixed electrode lines, the proposed MA-NEM memory switches have mutually-actuated cantilever-like electrode lines. Thus, MANEM memory switches show smaller deformations of beams in switching. This unique feature of MA-NEM memory switches allows aggressive reduction of the beam length while maintaining nonvolatile property. Also, the scalability of MA-NEM memory switches is confirmed by using finite-element (FE) simulations. MA-NEM memory switches can be promising solutions for reconfigurable logic (RL) circuits.
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Carbon-nanotube-based Nano Electromechanical Switches
이상욱,Anders Eriksson,Abdelrahim A. Sourab,캠벨 한국물리학회 2009 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.55 No.3
The fabrication of carbon nanotube (CNT) based nano electromechanical (NEM) switches and their electro-mechanical properties are discussed. Two different types of nano electromechanical switches, a cantilever type and a doubly-clamped type, will be introduced. The proposal of three terminal structures for the CNT-based NEM switch could lead to improvements in the stability of the switching performance. Both dc electro-mechanical properties and high-frequency measurements are used to study the switching performance. A comparison of the switching performances of both types of nano electromechanical switches is discussed at the end of the paper. The fabrication of carbon nanotube (CNT) based nano electromechanical (NEM) switches and their electro-mechanical properties are discussed. Two different types of nano electromechanical switches, a cantilever type and a doubly-clamped type, will be introduced. The proposal of three terminal structures for the CNT-based NEM switch could lead to improvements in the stability of the switching performance. Both dc electro-mechanical properties and high-frequency measurements are used to study the switching performance. A comparison of the switching performances of both types of nano electromechanical switches is discussed at the end of the paper.
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Woo Young Choi,Yong Jun Kim IEEE 2015 IEEE electron device letters Vol.36 No.9
<P>Complementary-metal-oxide-semiconductor (CMOS) and nanoelectromechanical (NEM) hybrid reconfigurable circuits are implemented for the first time using three-dimensional (3D) integration process. In addition, their operation is confirmed experimentally. For the fabrication of the 3D CMOS-NEM hybrid reconfigurable circuits, only the standard CMOS baseline process has been used except for the hydrofluoric acid vapor etch to release the NEM structures and focused-ion-beam patterning to define small patterns.</P>
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