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이선영,Yus Rama Denny,이강일,강희재,박남석 한국물리학회 2013 새물리 Vol.63 No.6
ZnO-based transparent conductive oxide thin films have been of much interest as an electronic material for transparent semiconductors because they have been widely used in applications such as antistatic coatings, touch display panels, solar cells, flat panel displays, and optical coatings. We have studied the electrical and optical properties of InSnZnO thin films. The InSnZnO thin films were deposited on glass substrates by using the RF magnetron sputtering method and a target composition of In:Zn:Sn = 20:48:32. The thin films were post-annealed at 350 C for 1 hour in air. The resistivity, carrier concentration, and mobility of the InSnZnO thin films were measured by using the van der pauw method and Hall measurements. The optical properties of the InSnZnO thin films were investigated by using an UV spectrometer. After post-annealing at 350 C, the resistivity of the InSnZnO thin films was decreased, but the carrier concentration was increased,which showed that the annealing had play a crucial role in increasing the carrier concentration. The average optical transmittance of the InSnZnO thin films was greater than 80% in the visible light region. These results show that InSnZnO thin films may be useful for transparent thin-film semiconductors. ZnO을 기본으로 하는 투명 전도 산화물 박막은 태양전지, 평판 액정디스플레이, 잡음방지 코팅, 터치 디스플레이 패널, 광학 코팅 등에활용하기 위하여 많은 연구가 진행되고 있다. 이 연구에서는 최근에관심을 나타내고 있는 InSnZnO의 박막의 전기적 및 광학적 특성에 대해서연구하였다. InSnZnO 박막은 In:Zn:Sn 의 조성비가 20:48:32된 타겟을사용하여 RF 마그네트론 스퍼터링 증착법으로, 유리 기판 위에 350 AA 만큼 박막을 성장시켰으며, 성장 후에 공기 중에서 350 C로1시간 동안 후열처리 하였다. 박막의 전기적 특성은 van der pauw 법 과홀 효과를 이용하여 측정하였으며, 박막의 광학적 특성은UV-Spectrometer를 이용하여 측정하였다. Van der pauw 법을 이용한박막의 전기적 특성 분석 결과, 열처리를 하기 전에 비하여 열처리과정을 거친 박막이 운반자 농도가 증가한 반면, 저항값은 감소하였다. 그리고 UV-Spectrometer를 이용한 광학적 특성을 측정해본 결과,가시광선영역인 380 nm~ 780 nm에서의 투과율이 80%이상으로투명전자소자로의 응용이 가능하다는 것을 보여주었다.
산화물 반도체의 다양한 처리를 통한 박막트랜지스터의 전기적 특성 향상
김태용,장경수,이소진,강승민,이윤정,이준신,Kim, Taeyong,Jang, Kyungsoo,Raja, Jayapal,Phu, Nguyen Thi Cam,Lee, Sojin,Kang, Seungmin,Trinh, Than Thuy,Lee, Youn-Jung,Yi, Junsin 한국전기전자재료학회 2016 전기전자재료학회논문지 Vol.29 No.1
The ultimate aims of display market is transparent or flexible. Researches have been carried out for various applications. It has been possible to reduced the process steps and get good electrical properties for semiconductors with large optical bandgaps. Oxide semiconductors have been established as one of the leading and promising technology for next generation display panels. In this paper, alternative treatment processes have been tried for oxide semiconductors of thin film transistors to increase the electrical properties of the thin film transistors and to investigate the mechanisms. There exist a various oxide semiconductors. Here, we focused on InGaZnO, ZnO and InSnZnO which are commercialized or researched actively.