The Effect of Hydrogen on the Tribological Properties of Hydrogenated Amorphous Carbon Films

Shin, Jong-Han,Lim, Dae-Soon The Korean Ceramic Society 1997 The Korean journal of ceramics Vol.3 No.2

Hydrogenated amorphous carbon films were deposited on silicon substrates by using an RF PECVD. The hydrogen/methane ratio was varied from 50% to 88% to study the effect of hytdrogen in the film on the tribological properties. The friction and wear behaviors of the deposited films were investigated by ball-on-disk type wear tester. FT-IR spectra were used to characterize the structure of the films. Tribological properties of carbon films were correlated with their structure such as ratio of "polymer-like" stretching type and that of sp2 bonding. The result showed that the annealing caused a decrease in the amount of wear of contacted $Si_3N_4$ balls and a increase in the coefficient of friction. Possible explanation for annealing effect was discussed by the hydrogen desorption.esorption.

CVD에 의한 비정질불화탄소 박막의 유전상수의 열처리 의존성

오 데레사,이광만,김경식,최치규 제주대학교 공과대학 첨단기술연구소 2003 尖端技術硏究所論文集 Vol.14 No.2

Fluorinated amorphous carbon films were deposited by using an inductively coupled plasma chemical vapor deposition with mixture of carbon tetrafluoride(CF₄) and methane(CH₄) gases. The chemical bonding structure was also characterized by using X-ray photelectron spectroscopy. a-C films such as a -C:H films or a-C:F films is termed 'amorphous carbon or diamond like carbon, because of their bond structure similar amorphous silicon. 'The structure is confirmed from sp^(3) carbon spectra of polycrystalline diamond by using X-ray photelectron spectroscopy. Fluorinated amorphous carbon films consist of the bonding structure with the sp^(3) carbon. The bonding structure consisted of sp^(3) carbon means partial cross link or cross link which improve the adhesion and hardness. The balanced cross link structureof a-C:F films decrease the dielectric constant and also improve the mechanical properties because of good adhesion and hardness like diamond.

Effects of ratio of mixed gases on the surface roughness and nano-hardness of a-C:H films

Haiyang Dai,Hui Jiang,Changyong Zhan,Ningkang Huang 한국물리학회 2008 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.52 No.-

Methane-argon mixed gases were used for assistance in growing hydrogenated amorphous-carbon a-C:H) films. a-C:H films on p-type (100) silicon wafers were produced by middle frequency unbalanced magnetron sputtering technique at different ratios of the methane-argon gases. These films were characterized by atomic-force microscopy, nanoindentation, and Raman spectroscopy. The experimental results reveal that the nano-hardness and surface roughness of the films increase with increasing Ar concentration from 17% to 50%, while they decreased when the Ar concentration was above 50\%. The sp³/sp² ratio increases with increasing Ar concentration from 17% to 50%, but it decreased when the Ar concentration exceeded 50%, based on the results of the measurements of Raman spectroscopy. Methane-argon mixed gases were used for assistance in growing hydrogenated amorphous-carbon a-C:H) films. a-C:H films on p-type (100) silicon wafers were produced by middle frequency unbalanced magnetron sputtering technique at different ratios of the methane-argon gases. These films were characterized by atomic-force microscopy, nanoindentation, and Raman spectroscopy. The experimental results reveal that the nano-hardness and surface roughness of the films increase with increasing Ar concentration from 17% to 50%, while they decreased when the Ar concentration was above 50\%. The sp³/sp² ratio increases with increasing Ar concentration from 17% to 50%, but it decreased when the Ar concentration exceeded 50%, based on the results of the measurements of Raman spectroscopy.

Investigation of Copper and Silver Nanoparticles Deposited on a Nitrogen-doped Diamond-like Carbon (N-DLC) Film Electrode for Bio-sensing

Chunyan Jin,Aiping Zeng,조상진,부진효 한국물리학회 2012 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.60 No.6

An electrochemical method has been employed in this work to deposit copper and silver nanoparticles onto chemical-vapor-deposited nitrogen doped hydrogen amorphous diamond-like carbon (N-DLC) film electrodes. The electrochemical behaviors of the metal-nanoparticle-modified N-DLC electrodes have been characterized in the presence of glucose and hydrogen peroxide in the electrolyte. The copper and the silver nanoparticles possess high catalytic function for the oxidation of glucose and the reduction of hydro peroxide, respectively. The well-defined reduction responses of the reduction or hydrogen peroxide give the silver-nanoparticle-modified N-DLC electrodes high potential for application in hydrogen-peroxide sensing without a label.

고 안정화 프로터결정 실리콘 다층막 태양전지

임굉수(Lim, Koeng Su),곽중환(Kwak, Joong Hwan),권성원(Kwon, Seong Won),명승엽(Myong, Seung Yeop) 한국신재생에너지학회 2005 한국신재생에너지학회 학술대회논문집 Vol.2005 No.06

We have developed highly stabilized (p-i-n)-type protocrystalline silicon (pc-Si:H) multilayer solar cells. To achieve a high conversion efficiency, we applied a double-layer p-type amorphous silicon-carbon alloy (p-a-Si_{1-x}C_x:H) structure to the pc-Si:H multilayer solar cells. The less pronounced initial short wavelength quantum efficiency variation as a function of bias voltage proves that the double (p-a-Si_{1-x}C_x:H) layer structure successfully reduces recombination at the p/i interface. It was found that a natural hydrogen treatment involving an etch of the defective undiluted p-a-SiC:H window layer before the hydrogen-diluted p-a-SiC:H buffer layer deposition and an improvement of the order in the window layer. Thus, we achieved a highly stabilized efficiency of 9.0% without any back reflector.

Hydrogen plasma-enhanced atomic layer deposition of hydrogenated amorphous carbon thin films

Choi, Taejin,Yeo, Seungmin,Song, Jeong-Gyu,Seo, Seunggi,Jang, Byeonghyeon,Kim, Soo-Hyun,Kim, Hyungjun Elsevier 2018 Surface & coatings technology Vol.344 No.-

<P><B>Abstract</B></P> <P>Hydrogenated amorphous carbon (a-C:H) thin films were prepared by hydrogen plasma-enhanced atomic layer deposition (PE-ALD). The a-C:H thin films were grown at low temperatures in the range of 150–350 °C using CBr<SUB>4</SUB> as the precursor and hydrogen plasma as the reactant. Raman spectroscopy, secondary ion mass spectrometry, X-ray photoelectron spectroscopy and Fourier transform infrared measurements showed that the a-C:H films consist of hydrogenated nanocrystalline sp<SUP>3</SUP> diamond, disordered sp<SUP>3</SUP> carbon and sp<SUP>2</SUP>-hybridized graphitic carbon incorporated with oxygen as a main contaminant. Moreover, the incorporation of bromine and oxygen in the a-C:H films was significantly reduced upon increasing the growth temperature from 200 to 300 °C. Surface hydroxylation and precursor exposure pretreatments were employed to saturate the adsorption of CBr<SUB>4</SUB> precursors and enhance the initial nucleation of carbon during the deposition of the a-C:H thin film by the PE-ALD process. In addition, the conformal growth of a-C:H thin films on three-dimensional structures was confirmed.</P> <P><B>Highlights</B></P> <P> <UL> <LI> Hydrogen plasma-enhanced atomic layer deposition of hydrogenated amorphous carbon (a-C:H) thin films was developed. </LI> <LI> Substrate pretreatments by plasma hydroxylation and CBr<SUB>4</SUB> exposure are helpful for the uniform deposition of a-C:H films. </LI> <LI> a-C:H thin films can be deposited on three-dimensional structures in a conformal manner. </LI> </UL> </P> <P><B>Graphical abstract</B></P> <P>[DISPLAY OMISSION]</P>

Hydrogenated amorphous carbon films deposited using plasma enhanced chemical vapor deposition processes

Li Jie,Chae Heeyeop 한국화학공학회 2023 Korean Journal of Chemical Engineering Vol.40 No.6

Hydrogenated amorphous carbon (a-C:H) is a class of amorphous carbon with more than 30% hydrogen content and containing sp2 as well as sp3 carbon atoms. It is widely used as a hard mask in semiconductor device fabrication, protective coatings, lubricants, and biomedical applications. The properties of a-C:H films are known to be strongly dependent on the carbon bonding structure and are characterized using the sp2/sp3 carbon hybridization ratio. The a-C:H films are typically deposited by plasma-enhanced chemical vapor deposition (PECVD) processes, and this review summarizes and discusses the relationship between the sp2/sp3 ratio of a-C:H and plasma characteristics. The effects of temperature, radical density, ion density, and ion energy on the sp2/sp3 ratio of a-C:H are investigated and summarized.

비정질 실리콘-탄소 반도체에 관한 연구

李才熙 慶一大學校 1999 論文集 Vol.16 No.5

Hydrogenated amorphous silicon-carbon(a-SiC:H) thin films were prepared using a PECVD technique. a-SiC:H thin films with wide bandgap energy are useful as p-layer of p-i-n type solar cell. Electrical dark conductivity and optical band gap energy were measured with various deposition parameters. We could make a-SiC:H films with wide band gap energy and conclude the H concentration in the a-SiC:H films are relate with the band gap energy.

Interfacial effect on thermal conductivity of diamond-like carbon films

김종욱,양호순,전영하,김경천 대한기계학회 2010 JOURNAL OF MECHANICAL SCIENCE AND TECHNOLOGY Vol.24 No.7

Diamond-like carbon (DLC) has been of interest as a promising coating for protection and insulating layer in micro-electromechanical systems due to high hardness, wear resistance, transparency in IR range, chemical inertness and biocompatibility. The interfacial effect on thermal transport is studied for DLC films deposited on Al2O3 substrates with an ion gun method. Thermal conductivity of DLC thin films is measured with a 3ω method. DLC films show the thickness-dependent thermal conductivity, which is understood with the interfacial thermal resistance between DLC thin film and Al2O3 substrate. The interfacial thermal resistance and thermal conductivity of bulk DLC are determined with the measured thickness-dependent thermal conductivity of DLC films.

수소화된 비정질 탄소 반사방지 코팅층이 염료감응형 태양전지의 효율에 미치는 영향

송재실,김남훈,박용섭,Song, Jae-Sil,Kim, Nam-Hoon,Park, Yong Seob 한국전기전자재료학회 2019 전기전자재료학회논문지 Vol.32 No.4

Raman spectra of a-C:H thin films deposited with an unbalanced magnetron sputtering system showed that the G peak shifted to a higher wavenumber as the target power density increased and $I_D/I_G$ ratio increased from 0.902 to 1.012. Moreover, the transmittance of a-C:H films fabricated at 60 nm tended to decrease with increasing target power density; at 550 nm in the visible light region, the transmittance decreased from 69% to 58%. The rms surface roughness values of the a-C:H thin films decreased with increasing target power density, and varied from 1.11 nm to 0.71 nm. In order to achieve efficient light trapping, the light scattering at the rough interface must be enhanced. Consequently, the surface roughness of the thin film will decrease with the target power density. Further, the refractive index and reflectivity of the a-C:H thin films increased with increasing target power density; however, the Brewster angle decreased with the target power density. Hence, dye-sensitized solar cells using an a-C:H antireflective coating increased the CE, $V_{OC}$, and $J_{SC}$ by approximately 8.6%, 5.5%, and 4.5%, respectively.