Effect of p-μc-Si1−xOx:H layer on performance of hetero-junction microcrystalline silicon solar cells

Taweewat Krajangsang,Ihsanul Afdi Yunaz,Shinsuke Miyajima,Makoto Konagai 한국물리학회 2010 Current Applied Physics Vol.10 No.3

A theoretical analysis using Analysis of Microelectronic and Photonic Structures (AMPS-1D) has been performed to investigate how the widegap p-lc-Si1-xOx:H influences the hetero-junction μc-Si:H solar cells. We observed that the open-circuit voltage (Voc) depends on the bandgap of p-layer. Using wide bandgap p-layer can reduce recombination at p-layer and p/i interface. Moreover, we also have studied the effect of light intensity on the performance of hetero-junction μc-Si:H solar cells. From simulation result, it was confirmed that the Voc logarithmically increases with increasing the light intensity. Besides, we also observed that the p-layer bandgap strongly influences the light-intensity dependence of hetero-junction μc-Si:H solar cells. The enhancement of Voc (DVoc) with increasing light intensity improves as the bandgap of p-layer is increased. Therefore, widegap p-μc-Si1-xOx:H is promising for use as window layer in hetero-junction μc-Si:H solar cells.

Effect of p-μc-Si1−xOx:H layer on performance of hetero-junction microcrystalline silicon solar cells under light concentration

Taweewat Krajangsang,Shunsuke Kasashima,Aswin Hongsingthong,Porponth Sichanugrist,Makoto Konagai 한국물리학회 2012 Current Applied Physics Vol.12 No.2

Preparation of p-type hydrogenated microcrystalline silicon oxide thin films (p-mc-Si1-xOx:H) by 13.56 MHz RF-PECVD method for use as a p-layer of hetero-junction mc-Si:H solar cells is presented. We investigated effects of wide-gap p-mc-Si1-xOx:H layer on the performance of hetero-junction mc-Si:H solar cells under various light intensity. We observed that a wide-gap p-mc-Si1-xOx:H was effective in improving the open-circuit voltage (Voc) of the solar cells. We also confirmed that the Voc logarithmically increased with increasing light intensity, and the enhancement of Voc became larger with increasing band gap of p-layer. These results indicate that wide-gap p-mc-Si1-xOx:H is a promising material for use as window layer in hetero-junction mc-Si:H solar cells.

Depth-controllable ultra shallow Indium Gallium Zinc Oxide/Gallium Arsenide hetero junction diode

Yang, S.U.,Choi, S.H.,Lee, J.,Kim, J.,Jung, W.S.,Yu, H.Y.,Roh, Y.,Park, J.H. Elsevier Sequoia 2013 JOURNAL OF ALLOYS AND COMPOUNDS Vol.561 No.-

One of the challenges for the III-V semiconductor-based nanometer-scale device fabrication is to achieve ultra-shallow junction diode. In this letter, we demonstrate a junction depth-controllable ultra-shallow (15nm) n-IGZO/p-GaAs hetero-junction diode at a low temperature (300<SUP>o</SUP>C). Through TOF-SIMS, J-V measurement, and HSC chemistry simulation, n-IGZO/p-GaAs junctions are carefully investigated. On-current density (0.02A/cm<SUP>2</SUP>) and on/off-current ratio (4x10<SUP>2</SUP>) were obtained in the junction annealed at 300<SUP>o</SUP>C. Additionally, the effect of n-IGZO thickness control on junction current is investigated, comparing 15nm and 30nm thick n-IGZO samples.

Physical properties of electrodeposited CIGS films on crystalline silicon: Application for photovoltaic hetero-junction

H. Saïdi,C. Ben Alaya,M.F. Boujmil,B. Durand,J.L. Lazzari,M. Bouaïcha 한국물리학회 2020 Current Applied Physics Vol.20 No.1

P-type CIGS (CuIn1-xGaxSe2) thin films are electro-deposited on a p-type c-Si substrate with a galvanostatic mode to form CIGS(p)/c-Si(p) hetero-junction. The Ga content is varied up to x=30%. The physical properties of formed CIGS films are characterized by XRD, SEM, EDS and UV–Visible spectroscopy. With x=30%, we obtain a single chalcopyrite phase of CIGS with a tetragonal crystal structure, a high crystallinity, an orientation toward the (112) direction and a band gap energy of 1.40 eV. AM1.5 J-V performed on the CuI0.7G0.3Se2/c-Si hetero-junction reveals interesting photovoltaic parameters with an efficiency of 3.75%. In addition, using the energy diagram of the hetero-junction calculated with the Anderson model, we show that it could play a dual role when combined to a c-Si cell in a Ag–Al/c-Si(n+)/c-Si (p)/CIGS(p)/Al new architecture. Therefore, in addition to its interesting photovoltaic parameters, this heterojunction can substitute the BSF.

수소 희석비에 따른 실리콘 이종접합 계면에 대한 분석 및 태양전지로의 응용

박준형,명승엽,이가원,Park, Jun-Hyoung,Myong, Seung-Yeop,Lee, Ga-Won 한국전기전자재료학회 2012 전기전자재료학회논문지 Vol.25 No.12

Hydrogenated amorphous silicon (${\alpha}$-Si:H) layers deposited by plasma enhanced chemical vapor deposition (PECVD) are investigated for use in silicon hetero-junction solar cells employing n-type crystalline silicon (c-Si) substrates. The optical and structural properties of silicon hetero-junction devices have been characterized using spectroscopy ellipsometry and high resolution cross-sectional transmission electron micrograph (HRTEM). In addition, the effective carrier lifetime is measured by the quasi-steady-state photocoductance (QSSPC) method. We have studied on the correlation between the order of ${\alpha}$-Si:H and the passivation quality at the interface of ${\alpha}$-Si:H/c-Si. Base on the result, we have fabricated a silicon hetero-junction solar cell incorporating the ${\alpha}$-Si:H passivation layer with on open circuit voltage ($V_{oc}$) of 637 mV.

Effect of proton irradiation on interfacial and electrical performance of N+Np+ InP/InGaAs hetero-junction

Zhang Chen,Su Yongbo,Mei Bo,Yang Feng,Zhang Jialin,Yun Huanqing,Liu Bo,Sun Yi,Zhang Haiming,Jin Zhi,Zhong Yinghui 한국물리학회 2023 Current Applied Physics Vol.48 No.-

InP-based hetero-junction bipolar transistors (HBTs) are attractive for various millimeter-wave and terahertz electronics due to their ultrahigh frequency performance. Therefore, the study of their irradiation reliability is extremely urgent. In this work, 2 MeV proton irradiation experiment has been carried out on self-fabricated N+Np+ InP/InGaAs hetero-junction. The degradation mechanisms have systematically been studied after exposure to protons of 5 × 1013 H+/cm2. The voltage range of recombination current at low forward bias has been largely expanded from 0-0.2 V to 0–0.6 V. Furthermore, the interface states properties have been characterized by utilizing the frequency-dependent conductance technique, the interface states density (Dit) has increased from approximately 9.02 × 1012 cm-2 eV-1–1.99 × 1013 cm-2 eV-1 to 9.51 × 1012 cm-2 eV-1–2.00 × 1013 cm-2 eV-1 after irradiation. The study would be great significance for understanding the evolution of proton irradiation on relative devices.

Fabrication and characterization of n-IZO / p-Si and p-ZnO:(In, N) / n-Si thin film hetero-junctions by dc magnetron sputtering

Dao, Anh Tuan,Phan, Thi Kieu Loan,Nguyen, Van Hieu,Le, Vu Tuan Hung Institute of Korean Electrical and Electronics Eng 2013 전기전자학회논문지 Vol.17 No.2

Using a ceramic target ZnO:In with In doping concentration of 2%, hetero-junctions of n-ZnO:In/p-Si and p-ZnO:(In, N)/n-Si were fabricated by depositing Indium doped n - type ZnO (ZnO:In or IZO) and Indium-nitrogen co-doped p - type ZnO (ZnO:(In, N)) films on wafers of p-Si (100) and n-Si (100) by DC magnetron sputtering, respectively. These films with the best electrical and optical properties were then obtained. The micro-structural, optical and electrical properties of the n-type and p-type semiconductor thinfilms were characterized by X-ray diffraction (XRD), RBS, UV-vis; four-point probe resistance and room-temperature Hall effect measurements, respectively. Typical rectifying behaviors of p-n junction were observed by the current-voltage (I-V) measurement. It shows fairly good rectifying behavior with the fact that the ideality factor and the saturation current of diode are n=11.5, Is=1.5108.10-7 (A) for n-ZnO:In/p-Si hetero-jucntion; n=10.14, Is=3.2689.10-5 (A) for p-ZnO:(In, N)/n-Si, respectively. These results demonstrated the formation of a diode between n-type thin film and p-Si, as well as between p-type thin film and n-Si..

일체형 페로브스카이트/실리콘 탠덤 태양전지용 결정질 실리콘 하부 전지에 대한 고찰 I

서동철(Dongchul Suh) 호서대학교 공업기술연구소 2020 공업기술연구 논문집 Vol.39 No.2

페로브스카이트/실리콘 탠덤 태양전지는 약 4년 만에 28%(Oxford PV, 1cm2)의 인증된 효율에 도달했으며, 대부분은 페로브스카이트 상부 전지와 결정질 실리콘 (c-Si) 하부 전지의 최적화된 설계를 바탕으로 한다. 이번 고찰에서는 성능을 향상시키기 위해 일체형 페로브스카이트/실리콘 탠덤 태양전지의 구조적 진화를 기반으로 하부전지의 구조 조정에 중점을 둔다. 우선, c-Si 태양전지는 내열성에 따라 실리콘 동종 접합과 실리콘 이종 접합(SHJ) 소자로 분류되며 해당 구조적 특징이 제시된다. 이어서 c-Si 동종 접합 및 이종 접합 하부 전지를 기반으로 한 일체형 페로브스카이트/실리콘 탠덤 전지의 진화를 요약한다. 일체형 페로브스카이트/실리콘 탠덤 전지를 위한 c-Si 하단 전지의 적절한 후보는 주로 부동태화 이미터 및 후면 전지 소자, 터널 산화물 부동태화 접촉 전지 및 SHJ 소자를 포함한다. 결론적으로, 이번 연구는 페로브스카이트/실리콘 탠덤 전지에 대해 다른 부동태화 구조를 가진 c-Si 바닥 전지의 중요한 역할을 강조하여 탠덤 전지의 성능을 향상시키는 방향을 제시한다. Perovskite/silicon tandem solar cells have reached a certified efficiency of 28% (Oxford PV, 1cm2) in 4 years, and most of them are based on an optimized design in the perovskite top cell and crystalline silicon (c-Si) bottom cell. This review focuses on the restructuring of the bottom cell based on the structural evolution of the monolithic perovskite/silicon tandem solar cell to improve performance. First of all, c-Si solar cells are classified into silicon homo-junction and silicon hetero-junction (SHJ) devices according to their heat resistance, and their structural features are presented. The evolution of an monolithic perovskite/silicon tandem cells based on c-Si homo-junction and hetero-junction bottom cells are then summarized. Suitable candidates for c-Si bottom cells for monolithic perovskite/silicon tandem cells mainly include passivated emitter and rear cell devices, tunnel oxide passivated contact cells and SHJ devices. In conclusion, this study suggests a direction to improve the performance of tandem cells by emphasizing the important role of c-Si bottom cells with different passivation structures for perovskite/silicon tandem cells.

일체형 페로브스카이트/실리콘 탠덤 태양전지용 결정질 실리콘 하부 전지에 대한 고찰 II

서동철(Dongchul Suh) 호서대학교 공업기술연구소 2021 공업기술연구 논문집 Vol.40 No.1

페로브스카이트/실리콘 탠덤 태양전지는 약 4년 만에 28%(Oxford PV, 1 cm2)의 인증된 효율에 도달했으며, 대부분은 페로브스카이트 상부 전지와 결정질 실리콘 (c-Si) 하부 전지의 최적화된 설계를 바탕으로 한다. 이번 고찰에서는 성능을 향상시키기 위해 일체형 페로브스카이트/실리콘 탠덤 태양전지의 구조적 진화를 기반으로 하부 전지의 구조 조정에 중점을 둔다. 우선, c-Si 태양전지는 내열성에 따라 실리콘 동종 접합과 실리콘 이종 접합(SHJ) 소자로 분류되며 해당 구조적 특징이 제시된다. 이어서 c-Si 동종 접합 및 이종 접합 하부 전지를 기반으로 한 일체형 페로브스카이트/실리콘 탠덤 전지의 진화를 요약한다. 일체형 페로브스카이트/실리콘 탠덤 전지를 위한 c-Si 하단 전지의 적절한 후보는 주로 부동태화 이미터 및 후면 전지 소자, 터널 산화물 부동태화 접촉 전지 및 SHJ 소자를 포함한다. 결론적으로, 이번 연구는 페로브스카이트/실리콘 탠덤 전지에 대해 다른 부동태화 구조를 가진 c-Si 바닥 전지의 중요한 역할을 강조하여 탠덤 전지의 성능을 향상시키는 방향을 제시한다. Perovskite/silicon tandem solar cells have reached a certified efficiency of 28% (Oxford PV, 1cm2) in 4 years, and most of them are based on an optimized design in the perovskite top cell and crystalline silicon (c-Si) bottom cell. This review focuses on the restructuring of the bottom cell based on the structural evolution of the monolithic perovskite/silicon tandem solar cell to improve performance. First of all, c-Si solar cells are classified into silicon homo-junction and silicon hetero-junction (SHJ) devices according to their heat resistance, and their structural features are presented. The evolution of an monolithic perovskite/silicon tandem cells based on c-Si homo-junction and hetero-junction bottom cells are then summarized. Suitable candidates for c-Si bottom cells for monolithic perovskite/silicon tandem cells mainly include passivated emitter and rear cell devices, tunnel oxide passivated contact cells and SHJ devices. In conclusion, this study suggests a direction to improve the performance of tandem cells by emphasizing the important role of c-Si bottom cells with different passivation structures for perovskite/silicon tandem cells.

Higher Efficiency Bifacial Type Hetero-Junction Solar Cells with Proposed Designs

Somin Park,Youngwoo Jeon,Hongrae Kim,Minkyu Jang,Donghyun Oh,Junsin Yi,Jinjoo Park 한국진공학회 2021 한국진공학회 학술발표회초록집 Vol.2021 No.2

We studied about 'Hetero-junction solar cell with intrinsic thin layer (HIT) solar cells of bifacial type structure with optimized electrode design. We designed front electrode of the cells that have 20 busbars with 0.07 mm width and 85 fingers with 70 µm width. As a results mono-facial type HIT solar cell have efficiency (ク) 22.87%. The ク of the bifacial type HIT cells was examined by varied conditions. We achieved ク, 26.3% that is higher than mono-facial HIT cell. The solar cell properties showed 19.7%, 15% increase in the Jsc and ク by made mono-facial type HIT solar cell.