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김대욱,이명현,서원선,박형호,서경한,박문기,임영수,강종호 한국물리학회 2010 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.57 No.41
We investigated the damp heat stability of Ga-doped ZnO (GZO) thin films grown on polyethylene terephthalate (PET) substrates. In order to find the effect of the hard coating layer, GZO thin films were grown on PET substrates with and without a hard coating layer by rf-magnetron sputtering at room temperature. After the deposition, a damp heat stability test was performed at 60 ℃ with a relative humidity of 90% for up to 150 hr. At the initial stage of the damp heat stability test, a rapid decay of the electrical property of GZO thin film was observed in both samples. In this experiment, the main mechanism of the degradation was a reduction of the mobility rather than the carrier concentration. The mobility of GZO on hard coated PET was saturated after the initial stage while there was further deterioration in the GZO thin film on bare PET. The origin was investigated with transmission electron microscopy and the result showed that the interfacial structure between the GZO thin film and the substrate play an important role in the damp heat stability.
진호,정윤환,박춘배 한국전기전자재료학회 2009 Transactions on Electrical and Electronic Material Vol.10 No.2
The electrical stability of ZnO: Al thin films deposited on glass substrate by the RF magnetron sputtering method have been modified by a hydrogen annealing treatment and SiO2 protection layer. AZO thin films were deposited at room temperature and different RF powers of 50, 100, 150, and 200 W to optimize the AZO film growth condition. The lowest value of resistivity of 9.44×10-4 Ωcm was obtained at 2 mtorr, room temperature, and a power level of 150 W. Then, the AZO thin films were annealed at 250-400 ºC for 1 h in hydrogen ambient. The minimum resistivity obtained was 8.32×10-4 Ωcm as-annealed at 300 ºC. The electrical properties were enhanced by the hydrogen annealing treatment. After a 72 h damp-heat treatment in harsh conditions of a water steam at 110 ºC for four representative samples, a degradation of electrical properties was observed. The sample of hydrogen-annealed AZO thin films with SiO2 protection layer showed a slight degradation ratio (17 %) of electrical properties and a preferable transmittance of 90 %. The electrical stability of AZO thin films had been modified by hydrogen annealing treatment and SiO2 protection layer.
Chen, Hao,Jeong, Yun-Hwan,Park, Choon-Bae The Korean Institute of Electrical and Electronic 2009 Transactions on Electrical and Electronic Material Vol.10 No.2
The electrical stability of ZnO: Al thin films deposited on glass substrate by the RF magnetron sputtering method have been modified by a hydrogen annealing treatment and $SiO_2$ protection layer. AZO thin films were deposited at room temperature and different RF powers of 50, 100, 150, and 200 W to optimize the AZO film growth condition. The lowest value of resistivity of $9.44{\times}10^{-4}{\Omega}cm$ was obtained at 2 mtorr, room temperature, and a power level of 150 W. Then, the AZO thin films were annealed at $250-400^{\circ}C$ for 1 h in hydrogen ambient. The minimum resistivity obtained was $8.32{\times}10^{-4}{\Omega}cm$ as-annealed at $300^{\circ}C$. The electrical properties were enhanced by the hydrogen annealing treatment. After a 72 h damp-heat treatment in harsh conditions of a water steam at $110^{\circ}C$ for four representative samples, a degradation of electrical properties was observed. The sample of hydrogen-annealed AZO thin films with $SiO_2$ protection layer showed a slight degradation ratio(17%) of electrical properties and a preferable transmittance of 90%. The electrical stability of AZO thin films had been modified by hydrogen annealing treatment and $SiO_2$ protection layer.
B. B. Kim,S. G. Seo,임영수,H.-S. Choi,서원선,박형호 대한금속·재료학회 2013 ELECTRONIC MATERIALS LETTERS Vol.9 No.5
A study on the damp heat stability of transparent conducting ZnO thin film grown on a polyethylene terephthalate substrate (PET) is reported. By thermal annealing of the PET substrate at 100°C with Ar flow in a vacuum chamber prior to the sputtering growth of Ga-doped ZnO (GZO) thin film, significantly enhanced damp heat stability was achieved at 60°C with a 90% relative humidity. Electrical and structural characterizations of the GZO thin films were carried out and the effects of the pretreatment on the improved damp heat stability are discussed.
Damp Heat Stability of ZnO:Ga Thin Films on Glass Substrate
강종호,임영수,서원선,최헌진,이명현,김대욱,방정식,장현우,이득용 한국물리학회 2010 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.57 No.41
We investigated the damp heat stability of Ga-doped ZnO (GZO) thin films grown on glass substrates. GZO thin films with thicknesses of 150 nm were grown on glass substrates by rfmagnetron sputtering. After the deposition, a damp heat stability test was performed at various temperature (50 ~ 65 ℃) and relative humidities (80 ~ 90%) for up to 240 hr. With increasing temperature and humidity, the sheet resistance of the GZO thin films increased to a maximum of 14.2% at 65 ℃/90% RH. The changes of surface morphology caused by damp heat were drastic and were comparable to the degradation caused by high temperature only. The effect of damp heat is discussed based on the electrical and the structural characterizations.
Kang, J.H.,Lee, M.H.,Kim, D.W.,Lim, Y.S.,Seo, W.S.,Choi, H.J. Elsevier 2011 Current Applied Physics Vol.11 No.3
In the research, we report the results on the damp heat stability test for the annealing effect of aluminum and gallium co-doped ZnO (AGZO) thin films. The prepared AGZO thin films (AGZO-RT) by DC moving magnetron sputtering at room temperature were exhibited thicknesses of 150 nm and the sheet resistances of 60-70@?/sq. And the part of the deposition, it was annealed in vacuum at 300 <SUP>o</SUP>C for 18 min. The damp heat tests of the two samples (AGZO-RT, AGZO-AN) were carried out in a chamber with 90% of relative humidity and 60 <SUP>o</SUP>C of temperature. As the time of the damp heat test increased, the electrical properties of AGZO-RT were more deteriorated than AGZO-AN. The sheet resistance by damp heat to the two samples increased more than three times after 1000 h. The various analytical methods were measured to the electrical, optical and structural properties in the damp heat condition tested about the two thin films, and the results will be discussed.
BIPV에 활용 가능한 반투명 페로브스카이트 태양전지의 효율 및 내구성에 관한 연구
김수경,김도형,소준영,최동혁,이유선,곽민준,Kim, Su-kyung,Kim, Do-hyung,Soh, Joon-young,Choi, Dong-hyeok,Lee, You-sun,Kwak, Min-jun 한국전력공사 2020 KEPCO Journal on electric power and energy Vol.6 No.2
Regarding greenhouse gas reduction, BIPV (Building Integrated Photovoltaics) is an important technology that can generate its own power in urban buildings based on clean energy resources. In particular, the perovskite material is attracting attention as a BIPV solar cell because it can have various colors and transparency. However, it is not easy to increase both transparency and efficiency factors because solar cell transparency and efficiency are inversely related to each other. Therefore, in this paper, we propose a semi-transparent perovskite solar cell structure that can improve both transparency and efficiency, and evaluate the stability according to international standard. 온실 가스 감축과 관련하여 BIPV (Building Integrated Photovoltaics)는 청정 에너지 자원을 바탕으로 도심의 빌딩에서 자체적으로 전력을 생산할 수 있는 중요한 기술이다. 특히, 페로브스카이트 물질은 투명성을 지니고 있으며, 다양한 색상 구현이 가능하여 BIPV용 태양전지로 주목받고 있다. 그러나 태양전지의 투과도와 효율은 서로 반비례 관계에 있어 두 인자를 모두 높이는 것은 쉽지 않은 과제이다. 따라서 본 논문에서는 투과도와 효율을 모두 높일 수 있는 반투명 페로브스카이트 태양전지 구조를 제안하고, 이를 평가하였으며, 안정성 평가를 위해 국제표준에 따른 내구성 평가를 수행하였다.