Comparative Study on Residual Stress of Cubic Boron Nitride Films Deposited Using DC and RF Sputtering Sources

Young‑Hwan Choi,Joo‑Youl Huh,Jong‑Keuk Park,Wook‑Seong Lee,Young‑Joon Baik 대한금속·재료학회 2023 METALS AND MATERIALS International Vol.29 No.8

In the sputter deposition of cubic boron nitride (cBN) films using a boron carbide (B4C) target, the difference in the residualstress of the deposited cBN films was investigated when deposition was performed by RF sputtering and DC sputtering. The threshold bias voltage required to form the cBN phase was − 100 V for RF sputtering, significantly lower than − 220 Vfor DC sputtering, attributed to the ion density of the RF plasma being larger than that of the DC plasma at a depositionpressure of 2 mTorr. As a result of comparing the residual stress of the cBN thin films deposited under each cBN depositioncondition, the residual stress generated in cBN films deposited by RF sputtering was lower than that of DC sputtering dueto the relatively low bias voltage for cBN formation. Thus, it can be concluded that the RF plasma is preferable in terms ofthe lower residual stress of cBN compared with the DC plasma.

DC 스퍼터링 증착에 의한 AI 전극을 갖는 전계발광소자 제작

윤석범 한국전기전자재료학회 2000 전기전자재료학회논문지 Vol.13 No.5

We successfully fabricated OLED(Organic Light Emitting Diodes) with Al cathodes electrode deposited by the DC magnetron sputtering. The effects of a controlled Al cathode layer of an Indium Tin Oxide (ITO)/blended single polymer layer (PVK Bu:PBD:dye)/Al light emitting diodes are described. The PVK (Poly(N-vinylcarbazole)) and Bu-PBD (2-(4-biphenyl-phenyl)-1,3,4-oxadiazole) are used hole transport polymer and electron transport molecule respectively. We found that both current injection and electroluminescence output are significantly different with a variable DC sputtering power. The difference is believed to be due to the influence near the blended polymer layer/cathode interface that results from the DC power and H$\sub$2//O in a chamber. And DC sputtering deposition is an effective way to fabricate Al electrodes with pronounced orientational characteristics without damage occurring to metal-organic interface during the sputtering deposition.

DC Magnetron Sputtering 법에 의한 AC Plasma Display panel의 Cr/Cu/Cr 금속전극 제조

남대현,이경우,박종완 한국전기전자재료학회 2000 전기전자재료학회논문지 Vol.13 No.8

Metal electrode materials for plasma display panel should have low electrical resistivity in order to maintain stable gas discharge and have fast response time. They should also hae good film uniformity adhesion and thermal stability. In this study Cr/Cu/Cr metal electrode structure is formed by DC magnetron sputtering. Cr and Cu films were deposited on ITO coated glasses with various DC power density and main pressures as the major parameters. After metal electrodes were formed a heat treatment was followed at 55$0^{\circ}C$ for 20 min in a vacuum furnace. The intrinsic stress of the sputtered Cr film passed a tensile stress maximum decreased and then became compressive with further increasing DC power density. Also with increasing the main pressure stress turned from compression to tension. After heat the treatment the electrical resistivity of the sputtered Cu film of 2${\mu}{\textrm}{m}$ in thickness prepared at 1 motor with the applied power density of 3.70 W/cm$^2$was 2.68 $\mu$$\Omega$.cm With increasing the main pressure the DC magnetron sputtered Cu film became more open structure. The heat treatment decreased the surface roughness of the sputtered Cr/Cu/Cr metal electrodes.

RF-DC magnetron co-sputtering법에 의한 p-ZnO 박막의 성장

강승민,Kang Seung Min 한국결정성장학회 2004 한국결정성장학회지 Vol.14 No.6

p형 ZnO 에피 박막을 사파이어 기판의 (0001)면 상에 RF-DC magnet co-sputtering 법으로 성장시켰다. 약 120nm두께의 단결정상 박막을 성공적으로 얻어내었다. p형 ZnO를 만들기 위해서 Al 금속 타켓을 이용하여 DC 스퍼터링으로 $400^{\circ}C$와 $600^{\circ}C$에서 ZnO를 rf magnetron sputtering으로 증착하고, 동시에 Al의 doping을 행하였으며, 성장된 박막의 결정성과 광특성에 대하여 고찰하였다. p-ZnO films have been grown on (0001) sapphire substrates by RF-DC magnetron co-sputtering. The p-ZnO single crystalline thin films of the thickness about 120 nm were grown successfully. The dopant (Aluminum) was sputtered simultaneously from Al metal target by DC sputtering during rf-magnetron sputtering of ZnO at the substrate temperatures of $400^{\circ}C$ and $600^{\circ}C$ respectively. The crystallinity and optical properties of as-grown P-ZnO films have been characterized.

Effect of DC Power on the Structural and the Electrical Properties of B-ion-doped ZnO Films

Christophe Avis,Se Hwan Kim,Ji Ho Hur,Sung Jun Hong,Jin Jang 한국물리학회 2009 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.55 No.1

We fabricated zinc-oxide (ZnO) thin films by DC sputtering at various DC powers after which the films were doped with boron ions. With increasing DC power, the crystalline quality improved, the Hall mobility increased and the sheet resistance decreased. DC-sputtered samples showed an increase in Hall mobility from 2.44 to 18.6 cm2/Vs and a decrease in the resistivity from 75.8 to 5.26 mΩ·cm when the DC current was increased from 0.3 A to 1.5 A. We fabricated zinc-oxide (ZnO) thin films by DC sputtering at various DC powers after which the films were doped with boron ions. With increasing DC power, the crystalline quality improved, the Hall mobility increased and the sheet resistance decreased. DC-sputtered samples showed an increase in Hall mobility from 2.44 to 18.6 cm2/Vs and a decrease in the resistivity from 75.8 to 5.26 mΩ·cm when the DC current was increased from 0.3 A to 1.5 A.

RF-enhanced DC-magnetron Sputtering of Indium Tin Oxide

Futagami, Toshiro,Kamei, Masayuki,Yasui, Itaru,Shigesato, Yuzo The Korean Ceramic Society 2001 The Korean journal of ceramics Vol.7 No.1

Indium tin oxide (ITO) films were deposited on glass substrates at $300^{\circ}C$ in oxygen/argon mixtures by RF-enhanced DC-magnetron sputtering and were compared to those by conventional DC magnetron sputtering. The RF enhancement was performed using a coil above an ITO target. X-ray diffraction measurements revealed that RF-enhanced plasma affected the preferred orientation and the crystallinity of the films. The resistivity of the films prepared by RF-enhanced DC-magnetron sputtering was almost constant at oxygen content lower than 0.3% and then increased sharply with increasing oxygen content. However the resistivity of the films by conventional sputtering has little dependence on the oxygen content. Those results can be explained on the basis of the incorporation of oxygen into the ITO films due to the RF enhancement.

폴리카보네이트에서의 표면개질 조건과 DC-Bias Sputtering 증착에 따른 Cu 밀착성

배길상(Kil-Sang Bae),엄준선(Jun-Sun Eom),이인선(In-Seon Lee),김상호(Sang-Ho Kim),고영배(Young-Bae Ko),김동원(Dong-Won Kim) 한국표면공학회 2004 한국표면공학회지 Vol.37 No.1

The enhancement of adhesion for Cu film on polycarbonate (PC) surface with the Ar/O₂ gas plasma treatment and dc-bias sputtering was studied. The plasma treatment with this reactive mixture changes the chemical property of PC surface into hydrophilic one, which is shown by the variation of contact angle with surface modification. The micro surface roughness that also gives the high adhesive environment is increased by the Ar/O₂ gas plasma treatment. These results were observed distinctly from the atomic force microscopy (AFM). The negative substrate dc-bias effect for the Cu adhesion on PC was also investigated. Accelerated Ar? ions in sheath area of anode bombard the bare surface of PC during initial stage of dc bias sputtering. PC substrate, therefore, has severe roughen and hydrophilic surface due to the physical etching process with more activated functional group. As dc-bias sputtering process proceeds, morphology of Cu film shows better step coverage and dense layer. The results of peel test show the evidence of superiority of bias sputtering for the adhesion between metal Cu and PC.

Effect of moving speed during in-line pulsed direct-current magnetron sputtering deposition on the structural and optical properties of Al-doped ZnO films

Kim, Sung Yong,Cho, Eou-Sik,Kwon, Sang Jik Elsevier S.A. 2017 Thin Solid Films Vol.638 No.-

<P><B>Abstract</B></P> <P>Aluminum-doped zinc oxide (AZO) films were deposited on glass substrates with pulsed direct current (DC) magnetron sputtering. Deposition was carried out in both static and dynamic modes. The pulsed DC sputtering process provided a stable deposition of AZO films without arcing, resulting in good crystallinity, unlike simple DC magnetron sputtering. The growth characteristics of the films sputtered on various moving speeds of the in-line dynamic mode are investigated and compared to those of the static mode. AZO films deposited at a moving speed of 120cm/min showed a dominant (002) orientation, a smooth surface roughness, and a higher figure of merit (FOM), of which properties are similar to those of the static mode. Comparisons of the characteristics obtained at several moving speeds showed that better crystallinity was obtained at the higher moving speed of 120cm/min. This improvement could be attributed to an averaging effect, which is due to more frequent interruption and initiation of the growth at the higher moving speed. Optical transmission characteristics were compared between the static and dynamic modes, and analyzed in terms of the complex indices of refraction and interference effects of light.</P> <P><B>Highlights</B></P> <P> <UL> <LI> AZO films were deposited by pulsed DC sputtering and compared to those of DC sputtering. </LI> <LI> The films were sputtered at various moving speeds of in-line dynamic and static modes. </LI> <LI> The films deposited at 120cm/min showed prominent crystallinity similar to the static mode. </LI> <LI> The films deposited at 120cm/min showed the advanced electrical and optical properties. </LI> </UL> </P>

인라인 스퍼터 시스템을 이용한 펄스의 주파수 변화에 따른 NbO_x 박막 특성에 관한 연구

엄지미,오현곤,권상직,박정철,조의식,조일환,Eom, Jimi,Oh, Hyungon,Kwon, Sang Jik,Park, Jung Chul,Cho, Eou Sik,Cho, Il Hwan 한국전기전자재료학회 2013 전기전자재료학회논문지 Vol.26 No.1

Niobium oxide($Nb_2O_5$) films were deposited on p-type Si wafers at room temperature using in-line pulsed-DC magnetron sputtering system with various frequencies. The different duty ratios were obtained by varying the frequency of pulsed DC power from 100 to 300 kHz at the fixed reverse time of $1.5{\mu}s$. From the thickness of the sputtered $NbO_x$ films, it was possible to obtain much higher deposition rate in case of pulsed-DC sputtering than RF sputtering. However, the similar leakage currents and structural characteristics were obtained from the metal-insulator-semiconductor(MIS) structure fabricated with the $NbO_x$ films and the x-ray photoelectron spectroscopy(XPS) results in spite of the different deposition rates. From the experimental results, the $NbO_x$ films sputtered by pulsed-DC sputtering are expected to be used in the fabrication process instead of RF sputtering.

DC Magnetron Sputtering에 의한 ATO 박막의 제조 (I)증착특성

윤천,이혜용,정윤중,Yoon, C.,Lee, H.Y.,Chung, Y.J. 한국세라믹학회 1996 한국세라믹학회지 Vol.33 No.4

Sb doped SnO2(ATO:Antinomy doped Tin Oxide) thin films were prepared by a DC magnetron spttuering method using oxide target and the deposition characteristics were investigated. The experimental conditions are as follows :Ar flow rate : 100 sccm oxygen flow rates ; 0-100 sccm deposition temperature ; 250 -40$0^{\circ}C$ DC sputter powder ; 150~550 W and sputtering pressure ; ; 2~7 mTorr. Deposition rate greatly depends not on the deposition temperature but on the reaction pressure oxygen flow rate and sputter power,. when the sputter powder is low ATO thin films with (110) preferred orientation are deposited. And when the sputter power is high (110) prefered orientation appeares with decreasing of oxygen flow rate and increasing of suputte-ring pressure.