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Lee, H.,Park, B.,Jeong, H. Elsevier 2009 Journal of materials processing technology Vol.209 No.4
Recently, many researchers have studied the material removal mechanism of copper chemical mechanical planarization (CMP). On the basis of their previous works, we studied the mechanical effect of copper (Cu) CMP on the material removal rate profile. Copper CMP was performed using citric acid (C<SUB>6</SUB>H<SUB>8</SUB>O<SUB>7</SUB>), hydrogen peroxide (H<SUB>2</SUB>O<SUB>2</SUB>), colloidal silica, and benzotriazole (BTA, C<SUB>6</SUB>H<SUB>4</SUB>N<SUB>3</SUB>H) as a complexing agent, an oxidizer, an abrasive, and a corrosion inhibitor, respectively. In this paper, the abrasives and process condition are main mechanical factors of CMP. The colloidal silica, used as an abrasive in copper CMP slurry containing 0.01M citric acid and 3vol% hydrogen peroxide, controlled the wafer edge profile by abrading the wafer edge. The polishing pressure did not contribute to the material removal rate (MRR) profile, but did to the MRR. As the rotational velocity of the polishing head and table increased, the deviation of MRR profile became smaller. The results of this paper showed that the abrasive concentration was the key factor which controlled the wafer edge profile, and also the rotational velocity was the key factor which controlled wafer center profile of MRR.
Signal Analysis of CMP Process based on AE Monitoring System
박선준,이현섭,정해도 한국정밀공학회 2015 International Journal of Precision Engineering and Vol.2 No.1
As chemical mechanical planarization (CMP) enables local and global planarization over a wafer surface by the combined effects of chemical and mechanical interactions, process monitoring is becoming an increasingly important in-situ methodology for process control. According to the materials and process, signal characteristics were distinguishable between material and process. In this study, an acoustic emission (AE) sensor was used to measure the abrasive and molecular-scale phenomena during CMP. An AE signal was acquired using rotational equipment and adapted to two types of equipment. First, a wireless AE system consisting of wireless modules using Bluetooth was used. This system was suitable for acquiring signals in rotational equipment. However, a wireless AE system could be acquired with only Root Mean Square(RMS) signals. Second, mercury slip-ring (wired) AE systems that were suitable for rotational equipment and the acquisition of raw signals were used. The acquired raw signals could be analyzed by a Fast Fourier Transform (FFT) for abrasive and molecular-level phenomena in the CMP process. The AE signal parameters including the AE RMS, frequency, and amplitude were analyzed for abrasive and molecular-level phenomena in the CMP process. The authors analyzed the AE signals for changes in the materials and CMP process.
연마제 특성에 따른 차세대 금속배선용 Al CMP (chemical mechanical planarization) 슬러리 평가
차남구,강영재,김인권,김규채,박진구,Cha, Nam-Goo,Kang, Young-Jae,Kim, In-Kwon,Kim, Kyu-Chae,Park, Jin-Goo 한국재료학회 2006 한국재료학회지 Vol.16 No.12
It is seriously considered using Al CMP (chemical mechanical planarization) process for the next generation 45 nm Al wiring process. Al CMP is known that it has a possibility of reducing process time and steps comparing with conventional RIE (reactive ion etching) method. Also, it is more cost effective than Cu CMP and better electrical conductivity than W via process. In this study, we investigated 4 different kinds of slurries based on abrasives for reducing scratches which contributed to make defects in Al CMP. The abrasives used in this experiment were alumina, fumed silica, alkaline colloidal silica, and acidic colloidal silica. Al CMP process was conducted as functions of abrasive contents, $H_3PO_4$ contents and pressures to find out the optimized parameters and conditions. Al removal rates were slowed over 2 wt% of slurry contents in all types of slurries. The removal rates of alumina and fumed silica slurries were increased by phosphoric acid but acidic colloidal slurry was slightly increased at 2 vol% and soon decreased. The excessive addition of phosphoric acid affected the particle size distributions and increased scratches. Polishing pressure increased not only the removal rate but also the surface scratches. Acidic colloidal silica slurry showed the highest removal rate and the lowest roughness values among the 4 different slurry types.
Preliminary Study on the Effect of Spray Slurry Nozzle in CMP for Environmental Sustainability
Lee, Hyunseop,Park, Yeongbong,Lee, Sangjik,Jeong, Haedo 한국정밀공학회 2014 International Journal of Precision Engineering and Vol.15 No.6
In chemical mechanical planarization (CMP) industry, reducing slurry consumption without avoiding the drop in productivity is one of the most important requirements for environmental sustainability. In this paper, we propose a spray slurry nozzle to reduce the slurry consumption and increase the material removal rate (MRR) in $SiO_2$ CMP. The spray slurry nozzle is compared with a commonly used tube-type slurry nozzle in terms of MRR, material removal uniformity, friction force, and process temperature. And, a case study on the greenhouse gas (GHG) emission associated with the slurry consumption is provided by polishing patterned wafers. Adopting the spray slurry nozzle in CMP process provides higher MRR, higher friction force, and shorter process time than the normal tubetype slurry nozzle. Thus, the spray slurry nozzle will diminish the carbon dioxide equivalent (CDE) associated with the slurry and electricity consumptions. Furthermore, using the spray nozzle decreases the process temperature and it may be used as a cooling system for the CMP process.
Yi-Koan Hong,Dae-Hong Eom,Young-Jae Kang,Jin-Goo Park,Jae-Suk Kim,Geon Kim,Ju-Yeol Lee,In-Ha Park 한국트라이볼로지학회 2002 한국트라이볼로지학회 학술대회 Vol.2002 No.10
The purpose of this study was to investigate the effect of micro holes, pattern structure and elastic modulus of pads on the polishing behavior such as the removal rate and WIWNU (within wafer non-uniformity) during CMP. The regular holes on the pad act as the superior abrasive particle's reservoir and regular distributor at the bulk pad, respectively. The superior CMP performance was observed at the laser processed bulk pad with holes. Also, the groove pattern shape was very important for the effective polishing. Wave grooved pad showed higher removal rates than K-grooved pad. The removal rate was linearly increased as the top pad's elastic modulus increased.
Preliminary Study on the Effect of Spray Slurry Nozzle in CMP for Environmental Sustainability
이현섭,박영봉,이상직,정해도 한국정밀공학회 2014 International Journal of Precision Engineering and Vol. No.
In chemical mechanical planarization (CMP) industry, reducing slurry consumption without avoiding the drop in productivity is oneof the most important requirements for environmental sustainability. In this paper, we propose a spray slurry nozzle to reduce theslurry consumption and increase the material removal rate (MRR) in SiO2 CMP. The spray slurry nozzle is compared with a commonlyused tube-type slurry nozzle in terms of MRR, material removal uniformity, friction force, and process temperature. And, a case studyon the greenhouse gas (GHG) emission associated with the slurry consumption is provided by polishing patterned wafers. Adoptingthe spray slurry nozzle in CMP process provides higher MRR, higher friction force, and shorter process time than the normal tubetypeslurry nozzle. Thus, the spray slurry nozzle will diminish the carbon dioxide equivalent (CDE) associated with the slurry andelectricity consumptions. Furthermore, using the spray nozzle decreases the process temperature and it may be used as a coolingsystem for the CMP process.
산화막 CMP에서 패드 두께가 연마율과 연마 불균일도에 미치는 영향
배재현,이현섭,박재홍,니시자와 히데키,키노시타 마사하루,정해도,Bae, Jae-Hyun,Lee, Hyun-Seop,Park, Jae-Hong,Nishizawa, Hideaki,Kinoshita, Masaharu,Jeong, Hae-Do 한국전기전자재료학회 2010 전기전자재료학회논문지 Vol.23 No.5
The polishing pad is important element for polishing characteristic such as material removal rate(MRR) and within wafer non-uniformity(WIWNU) in the chemical mechanical planarization(CMP). The result of the viscoelasticity measurement shows that 1st elastic modulus is increased and 2nd elastic modulus is decreased when the top pad is thickened. The finite element analysis(FEA) was conducted to predict characteristic of polishing behavior according to the pad thickness. The result of polishing experiment was similar with the FEA, and it shows that the 1st elastic modulus affects instantaneous deformation of pad related to MRR. And the 2nd elastic modulus has an effect on WIWNU due to the viscoelasticity deformation of pad.
Son Young-Hye,Park Jea-Gun,Choo Byoung-Kwon,Kang Seung-bae 한국물리학회 2021 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.79 No.1
In this study, a novel chemical–mechanical planarization (CMP) slurry that can perform self-stop polishing was designed. The essential aspects for self-stop polishing are precise design of a nonionic polymer type, molecular weight, and molecular concentration of a self-stopping chemical agent. A good example is polyvinylpyrrolidone (PVP) with a molecular weight of 1300 k and molecular concentration of 0.3 wt%. In this chemical design, the adsorption of a polymer hindrance layer on the surface film topography during CMP can become sufficient under self-stop conditions such as a specific polishing time (e.g., 4 min). The self-stop polishing mechanism is associated with the presence of a relative local pressure difference on the surface film topography. The proper adsorption of the polymer hindrance layer on the surface topography can achieve a uniform relative local pressure distribution globally, and the film polishing rate can achieve adequate planarization of the surface film topography.
고압 중수소 어닐링을 통한 SiO<sub>2</sub> 절연체의 균일성 개선
김용식 ( Yong-sik Kim ),정대한 ( Dae-han Jung ),박효준 ( Hyo-jun Park ),연주원 ( Ju-won Yeon ),길태현 ( Tae-hyun Kil ),박준영 ( Jun-young Park ) 한국전기전자재료학회 2024 전기전자재료학회논문지 Vol.37 No.2
As complementary metal-oxide semiconductor (CMOS) is scaled down to achieve higher chip density, thin-film layers have been deposited iteratively. The poor film uniformity resulting from deposition or chemical mechanical planarization (CMP) significantly affects chip yield. Therefore, the development of novel fabrication processes to enhance film uniformity is required. In this context, high-pressure deuterium annealing (HPDA) is proposed to reduce the surface roughness resulting from the CMP. The HPDA is carried out in a diluted deuterium atmosphere to achieve cost-effectiveness while maintaining high pressure. To confirm the effectiveness of HPDA, time-of-flight secondary-ion mass spectrometry (ToF-SIMS) and atomic force microscopy (AFM) are employed. It is confirmed that the absorbed deuterium gas facilitates the diffusion of silicon atoms, thereby reducing surface roughness.
Thermal, Tribological, and Removal Rate Characteristics of Pad Conditioning in Copper CMP
Hyosang Lee,Darren DeNardis,Ara Philipossian,Yoshiyuki Seike,Mineo Takaoka,Keiji Miyachi,Shoichi Furukawa,Akio Terada,Yun Zhuang,Len Borucki 한국전기전자재료학회 2007 Transactions on Electrical and Electronic Material Vol.8 No.2
High Pressure Micro Jet (HPMJ) pad conditioning system was investigated as an alternative to diamond disc conditioning in copper CMP. A series of comparative 50-wafer marathon runs were conducted at constant wafer pressure and sliding velocity using Rohm & Haas IC1000 and Asahi-Kasei EMD Corporation (UNIPAD) concentrically grooved pads under ex-situ diamond conditioning or HPMJ conditioning. SEM images indicated that fibrous surface was restored using UNIPAD pads under both diamond and HPMJ conditioning. With IC1000 pads, asperities on the surface were significantly collapsed. This was believed to be due to differences in pad wear rates for the two conditioning methods. COF and removal rate were stable from wafer to wafer using both diamond and HPMJ conditioning when UNIPAD pads were used. Also, HPMJ conditioning showed higher COF and removal rate when compared to diamond conditioning for UNIPAD. On the other hand, COF and removal rates for IC1000 pads decreased significantly under HPMJ conditioning. Regardless of pad conditioning method adopted and the type of pad used, linear correlation was observed between temperature and COF, and removal rate and COF.