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Hydrogen plasma-enhanced atomic layer deposition of hydrogenated amorphous carbon thin films
Choi, Taejin,Yeo, Seungmin,Song, Jeong-Gyu,Seo, Seunggi,Jang, Byeonghyeon,Kim, Soo-Hyun,Kim, Hyungjun Elsevier 2018 Surface & coatings technology Vol.344 No.-
<P><B>Abstract</B></P> <P>Hydrogenated amorphous carbon (a-C:H) thin films were prepared by hydrogen plasma-enhanced atomic layer deposition (PE-ALD). The a-C:H thin films were grown at low temperatures in the range of 150–350 °C using CBr<SUB>4</SUB> as the precursor and hydrogen plasma as the reactant. Raman spectroscopy, secondary ion mass spectrometry, X-ray photoelectron spectroscopy and Fourier transform infrared measurements showed that the a-C:H films consist of hydrogenated nanocrystalline sp<SUP>3</SUP> diamond, disordered sp<SUP>3</SUP> carbon and sp<SUP>2</SUP>-hybridized graphitic carbon incorporated with oxygen as a main contaminant. Moreover, the incorporation of bromine and oxygen in the a-C:H films was significantly reduced upon increasing the growth temperature from 200 to 300 °C. Surface hydroxylation and precursor exposure pretreatments were employed to saturate the adsorption of CBr<SUB>4</SUB> precursors and enhance the initial nucleation of carbon during the deposition of the a-C:H thin film by the PE-ALD process. In addition, the conformal growth of a-C:H thin films on three-dimensional structures was confirmed.</P> <P><B>Highlights</B></P> <P> <UL> <LI> Hydrogen plasma-enhanced atomic layer deposition of hydrogenated amorphous carbon (a-C:H) thin films was developed. </LI> <LI> Substrate pretreatments by plasma hydroxylation and CBr<SUB>4</SUB> exposure are helpful for the uniform deposition of a-C:H films. </LI> <LI> a-C:H thin films can be deposited on three-dimensional structures in a conformal manner. </LI> </UL> </P> <P><B>Graphical abstract</B></P> <P>[DISPLAY OMISSION]</P>