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Chalapathy, R.B.V.,Jung, Gwang Sun,Ko, Young Min,Ahn, Byung Tae,Kown, HyukSang Korea Photovoltaic Society 2013 Current Photovoltaic Research Vol.1 No.2
$Cu_2ZnSnS_4$ (CZTS) nanoparticles were synthesized by a solvothermal method using copper (II) acetate, zinc acetate, tin chloride, and sulfur in diethylenetriamine solvent. Binary sulfide particles such as CuS, ZnS, SnS, and $SnS_2$ were obtained at $180^{\circ}C$; single-phase CZTS nanoparticles were obtained at $280^{\circ}C$. CZTS nanoparticles with spherical shape and grain size of 40 to 60 nm were obtained at $280^{\circ}C$. In the middle of 180 and $280^{\circ}C$, CZTS and ZnS phases were found. The time variation of reaction at $280^{\circ}C$ revealed that an amorphous state formed first instead of binary phases and then the amorphous phase was converted to crystalline CZTS state; it is different reaction path way from conventional solid-state reaction path of which binary phases react to form CZTS. CZTS films deposited and annealed from single-phase nanoparticles showed porous microstructure and poor adhesion. This indicates that a combination of CZTS and other flux phase is necessary to have a dense film for device fabrication.
R.B.V. Chalapathy,Gwang Sun Jung,Young Min Ko,Byung Tae Ahn,HyukSang Kown 한국태양광발전학회 2013 Current Photovoltaic Research Vol.1 No.2
Cu2ZnSnS4 (CZTS) nanoparticles were synthesized by a solvothermal method using copper (II) acetate, zinc acetate, tin chloride, and sulfur in diethylenetriamine solvent. Binary sulfide particles such as CuS, ZnS, SnS, and SnS2 were obtained at 180°C; single-phase CZTS nanoparticles were obtained at 280°C. CZTS nanoparticles with spherical shape and grain size of 40 to 60 nm were obtained at 280°C. In the middle of 180 and 280℃, CZTS and ZnS phases were found. The time variation of reaction at 280°C revealed that an amorphous state formed first instead of binary phases and then the amorphous phase was converted to crystalline CZTS state; it is different reaction path way from conventional solid-state reaction path of which binary phases react to form CZTS. CZTS films deposited and annealed from single-phase nanoparticles showed porous microstructure and poor adhesion. This indicates that a combination of CZTS and other flux phase is necessary to have a dense film for device fabrication.
Yun, D.Y.,Arul, N.S.,Lee, D.U.,Lee, N.H.,Kim, T.W. Elsevier Science 2015 ORGANIC ELECTRONICS Vol.24 No.-
Organic bistable devices (OBDs) were fabricated utilizing nanocomposites made from a blend of Cu<SUB>2</SUB>ZnSnS<SUB>4</SUB> (CZTS) nanoparticles within a polymethyl methacrylate (PMMA) matrix on a polyethylene terephthalate substrate. Energy dispersive X-ray spectroscopy profiles, X-ray diffraction patterns, and high-resolution transmission electron microscopy images showed that the polycrystalline CZTS nanoparticles were randomly distributed in the PMMA layer. The current-voltage (I-V) curves at 300K for the fabricated OBDs showed bidirectional switchable and current hysteresis behaviors, indicative of the removal of sneak current paths without an additional layer with characteristics of diode or selector. The removal of the sneak current paths prevented the leakage current of the OBDs, resulting in an increase of the current of high conduction (ON) level. The maximum ON/low-conduction (OFF) ratio of the current bistability for the fabricated OBDs was as large as 1x10<SUP>9</SUP>. The write-read-erase-read sequences of the OBDs showed rewritable nonvolatile memory behaviors. The ON or the OFF states could be retained for 1x10<SUP>5</SUP> cycles, indicative of excellent memory stability. The ON/OFF ratio of 10<SUP>9</SUP> was maintained after 10<SUP>5</SUP> cycles. The memory mechanisms of the fabricated OBDs are described on the basis of the I-V results.
Kim, Y.N.,Yun, D.Y.,Arul, N.S.,Kim, T.W. Elsevier Science 2015 ORGANIC ELECTRONICS Vol.17 No.-
Nonvolatile memory devices based on a poly(4-vinylphenol) (PVP) layer containing Cu<SUB>2</SUB>ZnSnS<SUB>4</SUB> (CZTS) nanoparticles were fabricated by using a simple spin-coating method. An energy dispersive spectrum revealed that the CZTS nanoparticles were Cu poor and Zn rich. Transmission electron microscopy images showed that the CZTS nanoparticles were randomly distributed in the PVP layer. Capacitance-voltage (C-V) curves for Al/CZTS nanoparticles embedded in PVP layer/p-Si devices at 1MHz showed a hysteresis with flat-band voltage (V<SUB>fb</SUB>) shifts, which resulted from the existence of CZTS nanoparticles acting as trap sites in the memory devices. The magnitudes of the V<SUB>fb</SUB> corresponding to the memory window shifts between 1.0 and 2.5V, as determined from the C-V data at 1MHz, were dependent on the voltages applied to the memory device, indicative of multilevel characteristics for the memory effect. The operating mechanisms of the writing and the erasing processes for Al/CZTS nanoparticles embedded in PVP layer/p-Si devices are described on the basis of the C-V results and the energy-band diagrams.
Solvothermal Synthesis of CZTS Nanoparticles in Ethanol: Preparation and Characterization
Xinlong Yan,Xiaoyan Hu,Sridhar Komarneni 한국물리학회 2015 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.66 No.10
In this work, a low-cost, non-toxic and convenient one-pot solvothermal route to synthesize Cu2ZnSnS4 (CZTS) nanoparticles is reported. The effects of solvothermal temperature and reaction time on the structure, morphology and optical properties of the as-synthesized product were investigated by using X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), energy dispersive X-ray analysis (EDX) measurements and X-ray photoelectron spectroscopy (XPS). The results showed that the crystallinity of the CZTS powders was influenced by the solvothermal temperature and reaction time. The band gap of selected CZTS samples was near the optimum value for photovoltaic solar conversion in a single-band-gap device.