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Characterization of Lateral Type Field Emitters with Carbon-Based Surface Layer
Lee, Myoung-Bok,Lee, Jae-Hoon,Kwon, Ki-Rock,Lee, Hyung-Ju,Hahm, Sung-Ho,Lee, Jong-Hyun,Lee, Jung-Hee,Choi, Kyu-Man The Korean Infomation Display Society 2001 Journal of information display Vol.2 No.3
Lateral type poly-silicon field emitters were fabricated by utilizing the LOCOS (Local Oxidation of Silicon) process. For the implementation 'of an ideal field emission device with quasi-zero tunneling barrier, a new and fundamental approach has used conducted by introducing an intelligent carbon-based thin layer on the cathode tip surface via a field-assisted self-aligning of carbon (FASAC) process. Fundamental lowering of the turn-on field for the electron emission was feasible through the control of both the tip shape and surface barrier height.