ZPCCE계 바리스터의 미세구조와 전기적 성질 및 안정성

남춘우,윤한수,류정선 한국전기전자재료학회 2000 전기전자재료학회논문지 Vol.13 No.9

The electrical procerties and stability of ZnO-Pr$_{6}$O$_{11}$-CoO-Cr$_2$O$_3$-Er$_2$O$_3$ (ZPCCE) based varistors were investigated in the Er$_2$O$_3$content range of 0.0 to 4.0 mol%. ZPCCE ceramics containing 2.0 mol% Er$_2$O$_3$ exhibited the highest density of 5.74 g/㎤ corresponding to 99.3% of theoretical density. The varistors with 0.5 mol% and 2.0 mol% Er$_2$O$_3$exhibited a relatively satisfying nonlinearity, which the nonlinear exponent is 40.50 and 47.15, respectively and the leakage current is 2.66 $mutextrm{A}$, respectively. Under more severe d.c. stress, such as (0.80 V$_{1mA}$/9$0^{\circ}C$/12h)+(0.85 V$_{1mA}$115$^{\circ}C$/12h)+(0.90 V$_{1mA}$12$0^{\circ}C$/12h)+(0.95 V$_{1mA}$1$25^{\circ}C$12h), they showed a very excellent stability, which the variation rate of the variator voltage is -0.89% and -0.15%, the variation rate of the nonlinear coefficient is -4.67% and -3.56%, and the variation rate of leakage current is -6.02% and -19.56%, respectively. It is surely bellived that ZnO-0.5 mol% Pr$_{6}$O$_{11}$-1.0 mol% CoO-0.5 mol% Cr$_2$O$_3$-x mol% Er$_2$O$_3$(x=0.5, 2.0) based varistors will be greatly contributed to develop the advanced Pr$_{6}$O$_{11}$-based ZnO varistors in future.uture. future.uture.

ZnO-${Pr_6}{O_{11}}$-CoO-${Er_2}{O_3}$계 바리스터의 안정성에 관한 연구

남춘우 한국전기전자재료학회 2000 전기전자재료학회논문지 Vol.13 No.8

The stability of ZnO-Pr$_{6}$/O$_{11}$-CoO-Er$_{2}$/O$_3$based varistors was investigated with Er$_{2}$/O$_3$additive content of the range 0.0 to 2.0 mol%. All varistors sintered at 130$0^{\circ}C$ exhibited the thermal runaway within short times even under weak d.c. stress. As a result these varistors were completely degraded. On the contrary the stability of varistors sintered at 135$0^{\circ}C$ was far better than that of 130$0^{\circ}C$. In particular the varistors added with 0.5mol% Er$_{2}$/O$_3$ which the nonlinear exponent is 34.83 and the leakage current is 7.38 $mutextrm{A}$ showed a excellent stability which the variation rate of the varistors voltage the nonlinear coefficient and the leakage current is below 1%, 2%, and 3.5% respectively even under more severe d.c. stress such as (0.80 V$_{1mA}$9$0^{\circ}C$/12h)+(0.85 V$_{1mA}$115$^{\circ}C$/12h)+(0.90 V$_{1mA}$12$0^{\circ}C$12h) Consequently it is estimated that the ZnO-0.5 mol% Pr$_{6}$/O sub 11/-1.0 mol% CoO-0.5 mol% Er$_{2}$/O sub 3/ based varistors will be used to develop the advanced Pr$_{6}$/O$_{11}$-1.0 mol% CoO-0.5 mol% Er$_{2}$/O$_{3}$ based varistors will be used to develop the advanced Pr$_{6}$/O$_{11}$-based ZnO varistors having the high performance and stability in future. future.ure. future.

$Nd_24$O_3$가 첨가된 $Pr_6$$O_{11}$계 ZnO 바리스터의 미세구조 및 전기적 성질

남춘우,박춘현,윤한수 한국전기전자재료학회 2000 전기전자재료학회논문지 Vol.13 No.3

The microstructure and electrical properties of Pr$_{6}$/O sub 11/-Based ZnO varistors with Nd$_2$O$_3$ was doped in the range of 0.0 to 2.0 mol% were investigated. Most of the added Nd$_2$O$_3$were segregated at the nodal points and grain boundaries and were found to form the Nd-rich phase. In addition the bulk intergranular layer at the grain boundaries and nodal points was consisted of Nd-rich phase and Pr-rich phase. the average grain size was decreased in the range of 7.8 to 5.6${\mu}{\textrm}{m}$ with increasing Nd$_{2}$/O sub 3/ additive content. The nonlinearity of ZnO varistors sintered at 130$0^{\circ}C$ was much more excellent than that at 135$0^{\circ}C$ ZnO varistors doped with 1.0mol% Nd$_{2}$/O sub 3/ exhibited the best nonlinearity. which is 65.2 in the nonlinear exponent and 4.5$\mu$A in the leakage current. Consequently. it is estimated that Pr$_{6}$/O sub 11/ -based ZnO varistors doped with 1.0 mol% Nd$_{2}$/O sub 3/ are to be sufficiently used as basic composition to fabricate good varistors in the future.ure.

$SiO_2$가 첨가된 산화아연 바리스터의 미세구조 및 전기적 특성

남춘우,정순철 한국전기전자재료학회 1997 電氣電子材料學會誌 Vol.10 No.7

The influence of SiO$_2$on the microstructure and electrical properties of zinc oxide varistor was investigated. Zn$_2$SiO$_4$third phase in the sintered body was found at grain boundaries, multiple grain junctions, and occasionally within ZnO grains. This phase acted as a grain growth inhibitor, which retard the grain growth of the ZnO matrix by impeding migration on the grain boundaries. As SiO$_2$ addition increases, average grain size decreased from 40.6${\mu}{\textrm}{m}$ to 26.9${\mu}{\textrm}{m}$ due to the pinning effect by Zn$_2$SiO$_4$ and drag effect by Si segregation at grain boundaries, the breakdown voltage consequently increased. When SiO$_2$ addition is increased, interface state density decreased, however, the barrier height increased by decrease of donor concentration, as a result, the nonlinear exponent increased and leakage current decreased. While, as SiO$_2$ addition increase, it was found that the apparent dielectric loss factor shows a tendency of decrease. Wholly, electrical properties of zinc oxide varistor can be said to be improved by SiO$_2$addition.

ZnO세라믹 바리스터에 NiO첨가가 전기적 특성에 미치는 영향

남춘우 한국전기전자재료학회 1996 電氣電子材料學會誌 Vol.9 No.6

ZnO-based ceramic varistors containing NiO range 0.5 mol% to 4.0 mol% were fabricated by standard ceramic techniques. The influence of NiO on the microstructure and electrical behavior of ZnO varistor was investigated. As the content of NiO additive increases, average grain size decreased from 16.5.mu.m to 13.2.mu.m, and the amount of NiO existing in the grain interior and grain boundary region was approximately equal. NiO acted as an acceptor which decreases donor concentration due to the increase of Zn vacancy in the grain, and as a driver which migrates Zn interstitial in the depletion region toward the interface of grain boundary, which resulted in the decrease of interface state density. As a result, increasing the content of NiO additive, barrier height, nonlinear exponent, and varistor voltage decreased, and leakage current increased. Wholly, the physical and electrical properties of the ZnO varistor can be said to be affected by the NiO additive.

이트리아가 첨가된 프라세오디뮴계 산화아연 바리스터의 안정성에 관한 연구

남춘우,박춘현 한국전기전자재료학회 1998 전기전자재료학회논문지 Vol.11 No.10

The stability of paraseodymium-based zinc oxide varistor consisting of Zn-Pr-Co-Cr-Y oxide was investigated according to yttria additives under different stress conditons, such as 0.8V\ulcorner\ulcorner/373K/12h and 0.85V\ulcorner\ulcorner/393K/12h. Wholly, all varistor after the stress showed nearly symmetric and stable I-V characteristics. Particularly, in the case of 2.0mol% and 4.0mol% yttria-added varistor showing a good I-V characteristics, the varation rate of varistor voltage were less 1% and that of nonlinear coefficient were about degree of 5%, and what is remarkable, leakage current with increasing stress time during the applied stress was almost constant. It the light of these facts, it is estimated that varistor constituents having 2.0mol% and 4.0mol% yittria, respectively, will be utilized to various application fields.

$Y_2O_3$ 첨가에 따른 ZnO:Pr 바리스터의 미세구조 및 전기적 특성에 관한 연구

남춘우,정순철,이외천 한국전기전자재료학회 1998 전기전자재료학회논문지 Vol.11 No.1

Pr\ulcornerO\ulcorner-based ZnO varistors were fabricated in the range of $Y_2$O$_3$additive content from 0.5 to 4.0mol%, and its microstructure and electrical properties were investigated. Yttrium was distributed nearly in the grain boundaries and the cluster phase formed at nodal point but more in cluster phase. The average grain size was decreased markedly from 34.9 to 8.6${\mu}{\textrm}{m}$ with increasing $Y_2$O$_3$additive content. It is believed that the decrease of grain size is attributed to the formation of cluster phase and the weakening of driving force for liquid sintering. As a result, $Y_2$O$_3$was acted as the inhibitor of the grain growth. With increasing $Y_2$O$_3$additive content, the varistor voltage, the activation energy, and the nonlinear exponent increased whereas the leakage current decreased, especially 4.0mol% $Y_2$O$_3$-added varistor exhibited very good I-V characteristics; nonlinear exponent 87.42 and leakage current 46.77nA. On the other hand, as $Y_2$O$_3$additive content increases, the varistor showed tendency of the salient decrease for donor concentration and the increase for barrier height. Conclusively, it is estimated that ZnO:Pr varistor compositions added more than 2.0mol% $Y_2$O$_3$are to be used to fabricate useful varistors.

ZnO-$Pr_6$$O_{11}$-CoO-$Er_2$$O_3$계 바리스터의 미세구조 및 전기적 성질

남춘우,박춘형 한국전기전자재료학회 2000 전기전자재료학회논문지 Vol.13 No.6

The microstructure and electrical properties of ZnO-Pr$_{6}$/O$_{11}$-CoO-Er$_{2}$/O$_{3}$ based varistors were investigated with Er$_{2}$/O$_{3}$ additive content of the range 0.0 to 2.0 mol%. Most of the added Er$_{2}$/O$_{3}$ were segregated at the nodal points and grain boundaries and it coexisted with Pr$_{6}$/O$_{11}$ in the bulk intergranular layer. The average grain size was decreased in the range of 7.44 to 5.62${\mu}{\textrm}{m}$ at 130$0^{\circ}C$ and 18.36 to 9.11 at 135$0^{\circ}C$ with increasing Er$_{2}$/O sub 3/ additive content. The density of ceramics was in the range 4.87 to 5.08 g/cm$^3$ at 130$0^{\circ}C$ and 5.35 to 5.62 g/cm$^3$at 135$0^{\circ}C$. At 130$0^{\circ}C$ the varistors without Er$_{2}$/O$_{3}$ exhibited 29.66 in the nonlinear exponent and 28.23 $\mu$A in the leakage current whereas the varistors with 0.5 mol% Er$_{2}$/O$_{3}$ exhibited a high nonlinearity which is 52.78 in thenonlinear exhibited and 9.75 $\mu$A in the leakage current. At 135$0^{\circ}C$ the varistors without Er$_{2}$/O$_{3}$ exhibited a very poor nonlinearity indicating 2.08 in the nonlinear exponent and 133.79 $\mu$A in the leakage current whereas the varistors with 1.0mol% Er$_{2}$/O$_{3}$ exhibited a relatively high nonlinearity which is 36.79 in the nonlinear exponent and 5.92 $\mu$A in the leakage current. Therefore Er$_{2}$/O$_{3}$ was additive which greatly improve the nonlinearity. It is believed that ZnO-0.5 mol% Pr$_{6}$/O$_{11}$-1.0 mol% CoO-0.5 mol% Er$_{2}$/O$_{3}$ based ceramicss will be usefully used as a basic composition to develop the advanced pr$_{6}$/O$_{11}$-based ZnO varistors.ristors.ristors.

$La_2O_3$가 첨가된 Pr계 ZnO 바리스터의 미세구조와 전기적 특성

남춘우,박춘현 한국전기전자재료학회 1998 전기전자재료학회논문지 Vol.11 No.11

The effects of $La_2O_3$on the microstructure and electrical characteristics of Pr-based ZnO varistors were investigated. The average grain size increased in the range of 21.9~56.3$\mu$ m with increasing $La_2O_3$additive content(0.0~2.0 mol%). La was, of course grain boundary, largely segregated at the nodal point. As $La_2O_3$additive content increases, threshold voltage and nonlinear coefficient decreased and leakage current increased. In particular, 2.0 mol% $La_2O_3$-added varistor exhibited low threshold voltage 17.0V/mm and nonlinear coefficient of about 6. Based on these results, this varistor can be said to be used as low-voltage varistor, if nonlinear coefficient is somewhat improved forward.

$Dy_2$$O_3$가 첨가된 $Pr_6$$O_{11}$계 ZnO 바리스터의 전기적 성질 및 안정성

남춘우,윤한수 한국전기전자재료학회 2000 전기전자재료학회논문지 Vol.13 No.5

The electrical properties and stability of Pr$_{6}$/O$_{11}$-based ZnO wvaristors consisting of ZnO-Pr$_{6}$/O$_{11}$-CoO-Dy$_{2}$/O$_{3}$ based ceramics were investigated in the Dy$_{2}$/O$_{3}$ additive content range o 0.0 to 2.0 mol%. The density was nearly constant 5.62 g/cm$^3$corresponding to 97% of theoretical density as Dy$_{2}$/O$_{3}$ additive content increases up to 0.5 mol%. However the density decreased as Dy$_{2}$/O sub 3/ additive content is further additive content. Pr$_{6}$/O$_{11}$-based ZnO varistors doped with 0.5mol% Dy$_{2}$/O$_{3}$ exhibited a good nonlinearity, which is 37.76 in the nonlinear exponent and 5.36 $mutextrm{A}$ in the leakage current. And they exhibited very stress (0.80 V$_{1mA}$/9$0^{\circ}C$/12h)+(0.85 V$_{1mA}$/115$^{\circ}C$/12h)+(0.95 V$_{1mA}$/1$25^{\circ}C$/12h). Consequently it was estimated that ZnO-0.5 mol% Pr$_{6}$/O$_{11}$-1.0 mol% CoO-0.5 mol% Dy$_{2}$/O$_{3}$ based ceramics will be sufficiently used as a basic composition to develop the advanced Pr$_{6}$/O$_{11}$-based ZnO varistors in the future.he future.uture.he future.