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Park, Min Hyuk,Kim, Han Joon,Kim, Yu Jin,Jeon, Woojin,Moon, Taehwan,Hwang, Cheol Seong Wiley (John WileySons) 2014 Physica Status Solidi. Rapid Research Letters Vol.8 No.6
The effect of the top electrode (TE) on the ferroelectric properties and switching endurance of thin Hf0.5Zr0.5O2 films was examined. The TiN/Hf0.5Zr0.5O2/TiN capacitor can endure electric cycling up to 10(9) times, which is promising for the next-generation memory. RuO2 TE was reduced during annealing due to the reactive TiN bottom electrode, resulting in the degradation of the ferroelectric properties and endurance. In addition, the endurance of the TiN/Hf0.5Zr0.5O2/TiN capacitors was optimized by changing the film thickness and the postannealing temperature. (C) 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Kim, K.-J.,Yoo, H.,Jeong, S.-W.,Roh, Y. Wiley (John WileySons) 2010 Physica status solidi. PSS. A, Applications and ma Vol.207 No.7
<P>We report the roles of post-deposition annealing of PVP/pentacene double-layered films on the electrical properties of organic thin film transistors (OTFTs). Data obtained by atomic force microscopy (AFM) and X-ray diffraction (XRD) techniques demonstrate that both the grain size and the (001) peak intensity of pentacene films increase as the annealing temperature increases, resulting in clear dendrite structure after annealing at 100 degrees C in N(2) ambient. These physical properties were also confirmed by electrical conductivity (EC) of pentacene films. The electrical properties of OTFTs were improved with increasing the annealing temperature in general: Especially, mobility and on/off ratio of the OTFTs subjected to the 100 degrees C annealing process were 0.32 cm(2)/Ns and 10(6), respectively, which were both improved at least one order of magnitude as compared to those measured from the samples without annealing. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim</P>
Kim, Hyun Soo,Kim, Yong Tae,Hwang, Ha Sub,Sung, Man Young Wiley (John WileySons) 2014 Physica Status Solidi. Rapid Research Letters Vol.8 No.3
One of the candidate materials for phase-change memory, In3Sb1Te2 (IST), shows multilevel phase transformations from amorphous to several crystalline materials of IST, intermediate phases such as InSb, SbTe and InTe. However, its volume can change abruptly in the multilevel phase transformation, and this change can lead to vacancy movement and atomic migration, which are related to failures and reliability issues. We propose the carbon-incorporated In3Sb1Te2 (IST-C) alloy, which has higher retention ability than the IST ternary alloy. Carbon atoms delay crystallization and prevent volume change during the set/reset operation. The carbon concen- tration is 12.5%, and the activation energy increases from 5.1 eV to 5.4 eV. ((c) 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
Park, Ju Hyun,Kim, Hee-Dong,Hong, Seok Man,Yun, Min Ju,Jeon, Dong Su,Kim, Tae Geun Wiley (John WileySons) 2014 Physica Status Solidi. Rapid Research Letters Vol.8 No.3
The improvement of resistive switching (RS) phenomena of silicon-nitride (SiNx)-based resistive random access memory (ReRAM) cells through oxygen doping process was investigated. As a result, compared to un-doped SiNx films, the oxygen doped SiNx (SiNx:O-2)-based ReRAM cells show a lower current (approximate to 0.3 A) level at a high resistance state and a smaller variation of operating voltage through the reduction of leakage current in the SiNx:O-2 film by combining silicon dangling bonds and doped oxygen ions. Therefore, we believe that the oxygen doping process in SiNx films can effectively improve the RS characteristics of SiNx-based ReRAM cells. ((c) 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)