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Enhanced Performance of Solution‐Processed TESPE‐ADT Thin‐Film Transistors
Chen, Liang‐,Hsiang,Hu, Tarng‐,Shiang,Huang, Peng‐,Yi,Kim, Choongik,Yang, Ching‐,Hao,Wang, Juin‐,Jie,Yan, Jing‐,Yi,Ho, Jia‐,Chong,Lee, Cheng‐,Chung,Chen WILEY‐VCH Verlag 2013 Chemphyschem Vol.14 No.12
<P><B>Abstract</B></P><P>A solution‐processed anthradithiophene derivative, 5,11‐bis(4‐triethylsilylphenylethynyl)anthradithiophene (TESPE‐ADT), is studied for use as the semiconducting material in thin‐film transistors (TFTs). To enhance the electrical performance of the devices, two different kinds of solution processing (spin‐coating and drop‐casting) on various gate dielectrics as well as additional post‐treatment are employed on thin films of TESPE‐ADT, and <I>p</I>‐channel OTFT transport with hole mobilities as high as ∼0.12 cm<SUP>2</SUP> V<SUP>−1</SUP> s<SUP>−1</SUP> are achieved. The film morphologies and formed microstructures of the semiconductor films are characterized in terms of film processing conditions and are correlated with variations in device performance.</P>
Yook, Kyoung Soo,Jeon, Soon Ok,Min, Sung‐,Yong,Lee, Jun Yeob,Yang, Ha‐,Jin,Noh, Taeyong,Kang, Sung‐,Kee,Lee, Tae‐,Woo WILEY‐VCH Verlag 2010 Advanced Functional Materials Vol.20 No.11
<P><B>Abstract</B></P><P>Cesium azide (CsN<SUB>3</SUB>) is employed as a novel n‐dopant because of its air stability and low deposition temperature. CsN<SUB>3</SUB> is easily co‐deposited with the electron transporting materials in an organic molecular beam deposition chamber so that it works well as an n‐dopant in the electron transport layer because its evaporation temperature is similar to that of common organic materials. The driving voltage of the p‐i‐n device with the CsN<SUB>3</SUB>‐doped n‐type layer and a MoO<SUB>3</SUB>‐doped p‐type layer is greatly reduced, and this device exhibits a very high power efficiency (57 lm W<SUP>−1</SUP>). Additionally, an n‐doping mechanism study reveals that CsN<SUB>3</SUB> was decomposed into Cs and N<SUB>2</SUB> during the evaporation. The charge injection mechanism was investigated using transient electroluminescence and capacitance–voltage measurements. A very highly efficient tandem organic light‐emitting diodes (OLED; 84 cd A<SUP>−1</SUP>) is also created using an n–p junction that is composed of the CsN<SUB>3</SUB>‐doped n‐type organic layer/MoO<SUB>3</SUB> p‐type inorganic layer as the interconnecting unit. This work demonstrates that an air‐stable and low‐temperature‐evaporable inorganic n‐dopant can very effectively enhance the device performance in p‐i‐n and tandem OLEDs, as well as simplify the material handling for the vacuum deposition process.</P>
Wu, Bo,Lee, Jin Gyun,Lim, Chang Ju,Jia, Shao Dong,Kwon, Sung Won,Hwang, Gwi Seo,Park, Jeong Hill WILEY‐VCH Verlag 2012 Helvetica chimica acta Vol.95 No.4
<P><B>Abstract</B></P><P>The four new sesquiterpenoids <B>1</B>–<B>4</B>, and the new 2‐(2‐phenylethyl)‐4<I>H</I>‐chromen‐4‐one (=2‐(2‐phenylethyl)‐4<I>H</I>‐1‐benzopyran‐4‐one) derivative <B>5</B>, together with the two known sesquiterpenoids <B>6</B> and <B>7</B>, the five known chromenones <B>8</B>–<B>12</B>, and 1‐hydroxy‐1,5‐diphenylpentan‐3‐one (<B>13</B>), were isolated from a 70% MeOH extract of <I>Aquilaria malaccensis</I> agarwood chips. Their structures were elucidated on the basis of comprehensive spectral analyses and comparison with literature data.</P>
Khim, Dongyoon,Han, Hyun,Baeg, Kang‐,Jun,Kim, Juhwan,Kwak, Sun‐,Woo,Kim, Dong‐,Yu,Noh, Yong‐,Young WILEY‐VCH Verlag 2013 ADVANCED MATERIALS Vol.25 No.31
<P><B>Large‐area polymer FET arrays and integrated circuits (ICs)</B> are successfully demonstrated via a simple wire‐bar–coating process. Both a highly crystalline conjugated polymer layer and very smooth insulating polymer layer are formed by a consecutive wire‐bar–coating process on a 4‐inch plastic substrate with a short processing time for application as the active and dielectric layers of OFET arrays and ICs.</P>
Wang, Min,Jang, Sung Kyu,Jang, Won‐,Jun,Kim, Minwoo,Park, Seong‐,Yong,Kim, Sang‐,Woo,Kahng, Se‐,Jong,Choi, Jae‐,Young,Ruoff, Rodney S.,Song, Young Jae,Lee, Sungjoo WILEY‐VCH Verlag 2013 ADVANCED MATERIALS Vol.25 No.19
<P><B>Direct chemical vapor deposition (CVD) growth of single‐layer graphene</B> on CVD‐grown hexagonal boron nitride (h‐BN) film can suggest a large‐scale and high‐quality graphene/h‐BN film hybrid structure with a defect‐free interface. This sequentially grown graphene/h‐BN film shows better electronic properties than that of graphene/SiO<SUB>2</SUB> or graphene transferred on h‐BN film, and suggests a new promising template for graphene device fabrication.</P>
Wu, Bo,Kwon, Sung Won,Hwang, Gwi Seo,Park, Jeong Hill WILEY‐VCH Verlag 2012 Helvetica chimica acta Vol.95 No.9
<P><B>Abstract</B></P><P>Eight new and eight known 2‐(2‐phenylethyl)chromone (=2‐(2‐phenylethyl)‐4<I>H</I>‐1‐benzopyran‐4‐one) derivatives, <I>i.e.</I>, <B>1</B>–<B>8</B> and <B>9</B>–<B>16</B>, respectively, together with the two known sesquiterpenoids <B>17</B> and <B>18</B> were isolated from a 70% MeOH extract of <I>Aquilaria malaccensis</I> (AM) agarwood chips. Their structures were determined based on extensive spectroscopic analysis and comparison with reported data.</P>
Structural and Electrical Properties of Atomic Layer Deposited Al‐Doped ZnO Films
Lee, Do‐,Joong,Kim, Hyun‐,Mi,Kwon, Jang‐,Yeon,Choi, Hyoji,Kim, Soo‐,Hyun,Kim, Ki‐,Bum WILEY‐VCH Verlag 2011 Advanced functional materials Vol.21 No.3
<P><B>Abstract</B></P><P>Structural and electrical properties of Al‐doped ZnO (AZO) films deposited by atomic layer deposition (ALD) are investigated to study the extrinsic doping mechanism of a transparent conducting oxide. ALD‐AZO films exhibit a unique layer‐by‐layer structure consisting of a ZnO matrix and Al<SUB>2</SUB>O<SUB>3</SUB> dopant layers, as determined by transmission electron microscopy analysis. In these layered AZO films, a single Al<SUB>2</SUB>O<SUB>3</SUB> dopant layer deposited during one ALD cycle could provide ≈4.5 × 10<SUP>13</SUP> cm<SUP>−2</SUP> free electrons to the ZnO. The effective field model for doping is suggested to explain the decrease in the carrier concentration of ALD‐AZO films when the interval between the Al<SUB>2</SUB>O<SUB>3</SUB> layers is reduced to less than ≈2.6 nm (>3.4 at% Al). By correlating the electrical and structural properties, an extrinsic doping mechanism of ALD‐AZO films is proposed in which the incorporated Al atoms take oxygen from the ZnO matrix and form doubly charged donors, such as oxygen vacancies or zinc interstitials.</P>
Kim, Hyun‐,Kyung,Lee, Jung‐,Hyun,Kim, Yong‐,Joo,Nu Zheng, Zhen,Lee, Soon W. WILEY‐VCH Verlag 2013 European journal of inorganic chemistry Vol.2013 No.28
<P><B>Abstract</B></P><P>Dinuclear (π‐allyl)palladium chlorides, [(π‐allyl)Pd(μ‐Cl)]<SUB>2</SUB>, were cleaved by N‐heterocyclic carbenes (NHCs) to give mononuclear (π‐allyl)palladium–NHC chlorides, [(π‐allyl)Pd(Cl)(NHC)] (<B>1</B>–<B>6</B>) [NHC = 1,3‐bis(2,6‐diisopropylphenyl)imidazol‐2‐ylidene (IPR), 1,3‐bis(2,6‐diisopropylphenyl)‐4,5‐dihydroimidazol‐2‐ylidine (SIPR), 1,3‐bis(2,4,6‐trimethylphenyl)imidazol‐2‐ylidene (IMes)]. Complexes <B>1</B>–<B>6</B> were subsequently treated with aqueous NaN<SUB>3</SUB>, KSCN, KOCN, and CF<SUB>3</SUB>COOAg to produce the corresponding mononuclear (π‐allyl)palladium–NHC pseudohalogen complexes, [(π‐allyl)Pd(X)(NHC)] (X = N<SUB>3</SUB>, NCS, SCN, NCO, CF<SUB>3</SUB>COO) (<B>7</B>–<B>30</B>). These products could also be obtained by treating dinuclear pseudohalogen‐bridged Pd complexes, [(π‐allyl)Pd(μ‐X)]<SUB>2</SUB>, which were prepared by replacing the μ‐Cl ligand in [(π‐allyl)Pd(μ‐Cl)]<SUB>2</SUB>, with aqueous NaN<SUB>3</SUB>, KSCN, KOCN, or CF<SUB>3</SUB>COOAg, followed by cleavage with the NHCs. Reactions of [(π‐allyl)Pd(N<SUB>3</SUB>)(NHC)] with organic isothiocyanates (R–NCS) or CH<SUB>3</SUB>O(CO)C≡CO(CO)CH<SUB>3</SUB> resulted in selective 1,3‐dipolar cycloaddition into the Pd–azido bond to give heterocyclic compounds. By contrast, analogous reactions of [(η<SUP>3</SUP>‐allyl)Pd(N<SUB>3</SUB>)(IPr)] with an organic isocyanide (R–NC: R = <I>tert</I>‐butyl, benzyl) gave the adduct [(η<SUP>3</SUP>‐allyl)Pd(N<SUB>3</SUB>)(IPr)]<B>·</B>(R–NC) as the only product or a mixture of the adduct and a dipolar cycloaddition product, [(η<SUP>3</SUP>‐allyl)Pd{CN<SUB>4</SUB>(R)}(IPr)], depending on the isocyanides used. Finally, a series of (π‐allyl)Pd–NHC pseudohalogen complexes, [(π‐allyl)Pd(X)(NHC)], exhibited high catalytic activity in Suzuki–Miyaura cross‐coupling reactions of aryl chlorides with arylboronic acids.</P>
Lee, Taek‐,Yong,Kim, Hui‐,Seon,Park, Nam‐,Gyu WILEY‐VCH Verlag 2014 ChemPhysChem Vol.15 No.6
<P><B>Abstract</B></P><P>Limiting factors affecting photovoltaic performance of dye‐sensitized solar cell employing low‐temperature‐processed TiO<SUB>2</SUB> films were investigated. TiO<SUB>2</SUB> films were prepared at a low temperature of 200 °C using the normal alcohol‐containing binder‐free TiO<SUB>2</SUB> paste (LT200). Their photovoltaic performance was compared to a high‐temperature (550 °C) annealed TiO<SUB>2</SUB> film prepared using a polymer binder containing TiO<SUB>2</SUB> paste (HT550). Compared to the proportional increase in conversion efficiency with TiO<SUB>2</SUB> film thickness upto 14 μm for HT550, the increase in efficiency was terminated at relatively smaller thickness of about 8 μm for LT200 mainly due to unaugmented photocurrent. From the transient photocurrent–voltage studies, the electron transport rate was found to be almost identical, while charge recombination was one order of magnitude faster for LT200. Consequently, the electron diffusion length was more than 2–3 times shorter for LT200 than for HT550. Electron diffusion length and electron life time obtained from electrochemical impedance analysis were well consistent with those observed from transient measurement. Density of states (DOS) was evaluated to be shallow and narrow in LT200, which was responsible for limiting photovoltaic performance in the low‐temperature processed TiO<SUB>2</SUB> film.</P>
Cable‐Type Flexible Lithium Ion Battery Based on Hollow Multi‐Helix Electrodes
Kwon, Yo Han,Woo, Sang‐,Wook,Jung, Hye‐,Ran,Yu, Hyung Kyun,Kim, Kitae,Oh, Byung Hun,Ahn, Soonho,Lee, Sang‐,Young,Song, Seung‐,Wan,Cho, Jaephil,Shin, Heon‐,Cheol,Kim, Je Y WILEY‐VCH Verlag 2012 Advanced Materials Vol.24 No.38
<P><B>The mechanical flexibility of a cable‐type battery</B> reaches levels far beyond what is possible with conventional designs. The hollow‐spiral (helical) multi‐helix anode architecture is critical to the robustness under mechanical stress and facilitates electrolyte wetting of the battery components. This design enables the battery to reliably power an LED screen or an MP3 player even under severe mechanical twisting and bending.</P>