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Lim, Chang-Sung The Korea Association of Crystal Growth 2010 韓國結晶成長學會誌 Vol.20 No.5
Single crystals of $ZnWO_4$ were grown successfully in the [100], [010] and [001] directions using the Czochralski method. The growth parameters and the formation of slip plane in $ZnWO_4$ crystals were studied. $ZnWO_4$ crystals had a cleavage plane of (010). The dislocation density on the (010) plane at the center of the crystal was lower than that of the edge region. It was inferred that the high density at the edge of the crystals was caused by the thermal gradient during crystal growth. The etch pit arrangement revealed the (100) slip plane to be most active during crystal growth.
Growth and characterization of a Bi-Sr-Ca-Cu-O phase by crystal pulling method
윤대호,좌등혜유,길본칙지,길택정인,Yoon, D.H.,Sato, N.,Yoshimoto, N.,Yoshizawa, M. The Korea Association of Crystal Growth 1997 한국결정성장학회지 Vol.7 No.1
$Bi_2Sr_2Ca_{n-1}Cu_nOy$(BSCCO)계는 강한 이방성의 움직임을 갖는 초전도체로서 잘 알려져 있으며, 결정육성시 성장방향의 제어에 큰 어려움이 있다. 본 연구에서는 종자 결정과 도가니의 회전을 이용한 crystal pulling법을 이용하여 Bi-Sr-Ca-Cu-O계의 결정성장을 시도하였으며, 이로부터 $5{\times}5{\times}5{\textrm}{mm}^3$ 크기의 비교적 큰 결정을 성장하였. 또한 성장결정의 초전도 특성을 조사하였으며, $BiO_{1.5}$ -(Sr, Ca)O-CuO 3원 상태도에서의 결정화 가능 영역을 검토하였다. The $Bi_2Sr_2Ca_{n-1}Cu_nOy$(BSCCO) phase is well known to be a superconductor having a strong anisotropic behavior. It can be seen that it is difficult to control the growth direction. In this study, we try to grow a Bi-Sr-Ca-Cu-O phase crystal by the crystal pulling method with a seed crystal and crucibel rotation. Relatively large crystals of the order of $5{\times}5{\times}5{\textrm}{mm}^3$ dimensions can be obtained. We also discuss the possible crystallization field of the $BiO_{1.5}$-(Sr, Ca)O-CuO ternary phase diagram, and present some results of the characterization and magnetic measurements on the grown crystal.
Growth of lead-based functional crystals by the vertical bridgman method
Xu Jiayue The Korea Association of Crystal Growth 2006 韓國結晶成長學會誌 Vol.16 No.1
Some lead-based crystals show excellent ferroelectric, piezoelectric or scintillation properties and have attracted much attention in recent years. However, the erosion of the high temperature solution on platinum crucible and the evaporation of PbO component are the main problems often encountered during the crystal growth. In this paper, we reported recent progress on the Bridgman growth of lead-based functional crystals, such as novel relaxor ferroelectric crystals (PZNT and PMNT), scintillation crystals $(PbWO_4,\;PbF_2\;and\;PbClF)$ and piezoelectric crystals $(Pb_5Ge_3O_{11}\;and\;Pb_2KNb_5O_{15}),$ in Shanghai Institute of Ceramics, Chinese Academy of Sciences. The vertical Bridgman method has been modified to grow PZNT crystals from high temperature solution and as-grown crystals have been characterized. Large size lead-based scintillators, $PbWO_4\;and\;PbF_2$ crystals, have been mass-produced by the vertical Bridgman method in the multi-crucible fumace. These crystals have been supplied to CERN and other laboratories for high-energy physics experiments. The Bridgman growth of piezoelectric crystals $Pb_5Ge_3O_{11}\;and\;Pb_2KNb_5O_{15}$ are discussed also.
Growth of 1 inch $LuVO_4$ single crystals by the edge-defined film-fed-growth (EFG) technique
Kochurikhin, V.V.,Klassen, A.V.,Kvyat, E.V.,Ivanov, M.A. The Korea Association of Crystal Growth 2005 한국결정성장학회지 Vol.15 No.6
In suite of their superior optical and laser properties rare-earth orthovanadate single crystals have not been adopted yet into extensive industrial applications because of crystal growth difficulties. The edge-defined film-fed-growth (EFG) technique was applied successfully for the production of such crystals. At first time 1 inch $LuVO_4$ single crystals were grown by the EFG technique using newly developed die construction of high porous iridium with the application of automatic diameter control system.
Growth and upconversion properties of erbium doped $LiNbO_{3}$ single crystal fibers
Yang, Woo-Seok,Suh, Su-Jeong,Lee, Jong-Ho,Fukuda, Tsuguo,Yoon, Dae-Ho The Korea Association of Crystal Growth 1999 韓國結晶成長學會誌 Vol.9 No.4
Erbium (Er) doped $LiNbO_{3}(Er:LiNbO_{3})$ single crystal fibers were grown free of creacks along the c-axis by micro-pulling down method. The $Er^{3+}$ concentration was distributed homogeneously along the growth axis. The samples for optical characterization were cut from as-grown single crystal fibers and polished. When the 980nm light was incident on the sample, upconversion phenomena were observed at the green range of wavelength 510~570nm. In addition, the intensity of upconversion was remarkably increased by increasing the concentration of $Er_{2}O_{3}$ dopant in as-grown $Er:LiNbO_{3}$ crystals.
Growth of the substrate crystals for $La_{2-x}Sr_{x}CuO_{4}$ thick films
Watauchi, Satoshi,Tanabe, Hideyoshi,Tanaka, Isao,Kojima, Hironao The Korea Association of Crystal Growth 1999 韓國結晶成長學會誌 Vol.9 No.4
The distribution coefficients of Ni and Zn to the Cu site in $La_{2-x}Sr_{x}CuO_{4}$(LCO) were investigated to determine the suitable solvent composition ofr crystal growth of $La_{2}{Cu}_{1-x}{M}_{x}{O}_{4}$(M=NI, Zn)(LCMO), and were found to be 4.2 for NI and 0.66 for Zn, respectively. Single crystals of LCO, and LCMO of high homogeneity were grown by traveling solvent floating zone technique using suitable solvents. NO diamagnetic signals were observed for all substituted crystals. This fact suggests that crystals of LCO partially substituted by Ni or Zn are useful as substrate crystals.
Borodin, V.A.,Sidorov, V.V.,Steriopolo, T.A. The Korea Association of Crystal Growth 1999 韓國結晶成長學會誌 Vol.9 No.4
Detailed description of the crystal growth methods permitting one to obtain complicated shape crystals from the melt is given. The variable shaping technique provides the growth of crystals with a discrete altering cross-section configuration during crystallization. The dynamic local shaping technique enables one to grow items with a continuous alteration of the side surface profile by a preset program.
Abe, Takao The Korea Association of Crystal Growth 1999 韓國結晶成長學會誌 Vol.9 No.4
The thermal distributions near the growth interface of 150nm CZ crystals were measured by three thermocouples installed at the center, middle (half radius) and edge (10nm from surface) of the crystals. The results show that larger growth rates produced smaller thermal gradients. This contradicts the widely used heat flux balance equation. Using this fact, it is confirmed in CZ crystals that the type of point defects created is determined by the value of the thermal gradient(G) near the interface during growth, as already reported for FZ crystals. Although depending on the growth systems the effective length of the thermal gradient for defect generation are varied, we defined the effective length as 10n,\m from th interface in this experiment. If the G is roughly smaller than 20C/cm, vacancy rich CZ crystals are produced. If G is larger than 25C/cm, the species of point defects changes dramatically from vacancies to interstitials. The experimental results after detaching FZ and CZ crystals from the melt show that growth interfaces are filled with vacancies. We propose that large G produces shrunk lattice spacing and in order to relax such lattice excess interstitials are necessary. Such interstitials recombine with vacancies which were generated at the growth interface, nest occupy interstitial sites and residuals aggregate themselves to make stacking faults and dislocation loops during cooling. The shape of the growth interface is also determined by te distributions of G across the interface. That is, the small G and the large G in the center induce concave and convex interfaces to the melts, respectively.
Atomic scale crystal growth processes
Jackson, Kenneth A.,Beatty, Kirk M. The Korea Association of Crystal Growth 1999 한국결정성장학회지 Vol.9 No.4
Computer simulations have played a central role in the development of our understanding of the atomic scale processes involved in crystal growth. The assumptions underlying computer modeling will be discussed and our recent work on modeling of the kinetic formation of thermodynamically unstable phases in alloys or mixtures will be reviewed. Our Monte Carlo computer simulations have reproduced the experimental results on the rapid recrystallization of laser-melted doped silicon. An analytical model for this phenomenon has been developed, and its applicability to other materials will be discussed.
Control of axial segregation by the modification of crucible geometry
Lee, Kyoung-Hee The Korea Association of Crystal Growth 2008 韓國結晶成長學會誌 Vol.18 No.5
We will focus on the horizontal Bridgman growth system to analyze the transport phenomena numerically, because the simple furnace system and the confined growth environment allow for the precise understanding of the transport phenomena in solidification process. In conventional melt growth process, the dopant concentration tends to vary significantly along the crystal. In this work, we propose the modification of crucible geometry for improving the productivity of silicon single-crystal growth by controlling axial specific resistivity distribution. Numerical analysis has been performed to study the transport phenomena of dopant impurities in conventional and proposed Bridgman silicon growth using the finite element method and implicit Euler time integration. It has been demonstrated using mathematical models and by numerical analysis that proposed method is useful for obtaining crystals with superior uniformity along the growth direction at a lower cost than can be obtained by the conventional melt growth process.