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Lee, Jae Bin,Lee, Seong Hyuk The Japan Institute of Metals 2011 Materials transactions Vol.52 No.7
<P>The aim of this study is to investigate the effect of interfacial thermal boundary resistance (TBR) at a metal-dielectric interface on non-equilibrium energy transport in Au/SiO<SUB>2</SUB> films heated by femtosecond pulse lasers. In this paper we suggest a combined set of numerical models that include the two-temperature model (TTM) for a metal side and the heat conduction equation for a dielectric layer. In addition, the TBRs between metal and nonmetal layers are calculated using thermal conductance, which is closely associated with the electron-phonon resistance and phonon-phonon resistance. Herein we present the transient and spatial distributions of TBR for a Au/SiO<SUB>2</SUB> film irradiated by a 100-fs pulse laser with a 1053 nm wavelength, which are substantially affected by the phonon temperature and electron-phonon coupling. We also discuss the effect of laser fluence on the TBR and energy transport. The TBR rapidly increases the thermal conductivity at the interface, and becomes dominant at an early stage of laser irradiation over a very short period and then drastically decreases with time. Moreover, the TBR is substantially affected by the electron-phonon coupling and it should be considered for more accurate prediction of the lattice temperature drop at the interface.</P>
Chandra, S. V. Jagadeesh,Jeong, Myung-Il,Park, Yun-Chang,Yoon, Jong-Won,Choi, Chel-Jong The Japan Institute of Metals 2011 MATERIALS TRANSACTIONS Vol.52 No.1
<P>We fabricated Ge metal-oxide-semiconductor (MOS) devices with Pt/HfO<SUB>2</SUB> gate stacks and investigated the effect of thermal treatment on their structural and electrical properties in oxygen (O<SUB>2</SUB>) and forming gas (FG) environments. The annealing ambient dependency of the structural and electrical properties of Ge MOS devices was directly compared to that of Si MOS devices. For both Ge and Si MOS devices, the thermal treatment process led to a decrease in accumulation capacitance regardless of the annealing ambient. The interfacial layer (IL) at the HfO<SUB>2</SUB>/Ge stack was much thinner than the HfO<SUB>2</SUB>/Si stack. O<SUB>2</SUB> annealing resulted in the improvement of the HfO<SUB>2</SUB> interfacial quality of Ge and Si MOS devices, although the improvement of the Ge devices was greater than that of the Si devices. FG annealing was much more effective in the reduction of interface state density (<I>D</I><SUB>it</SUB>) in Si devices than in Ge devices. A negligible IL at a HfO<SUB>2</SUB>/Ge stack could be a main cause of degraded electrical performance of a Ge device with FG annealing.</P>
Choi, Jiyoun,Choi, Jeongyong,Choi, Sungyoul,Kim, Jongphil,Cho, Sunglae Japan Institute of Metals 2015 MATERIALS TRANSACTIONS Vol.56 No.9
<P> We have grown un-doped and transition metal (V, Cr, Mn, Fe, Co, Ni, Cu)-doped Ge bulk single crystals using the vertical gradient solidification method. The electrical resistivities of V, Ni, Co, and Fe-doped Ge crystals significantly increased, 10<SUP>4</SUP>∼10<SUP>5</SUP> times, between 5 and 100 K, which were 100 times larger than that of the commercial Ge resistance temperature device (RTD). The large variation of electrical resistance at low temperature arises from decreased carrier density and mobility at low temperature. The mobility reduction at low temperature might be caused by ionized impurity scattering. </P>
Thermodynamic Interactions of Nb and Mo on Ti in Liquid Iron
Chung, Tae-In,Lee, Joong-Beom,Kang, Jin-Goo,Jo, Jong-Oh,Kim, Bo-Ho,Pak, Jong-Jin The Japan Institute of Metals 2008 MATERIALS TRANSACTIONS Vol.49 No.4
<P>Thermodynamic interactions of niobium and molybdenum on titanium in liquid iron were studied in the temperature range of 1873∼1973 K by measuring the effects of niobium and molybdenum on the solubility product for TiN formation in liquid iron using the metal-nitride-gas equilibration technique. The experimental results were thermodynamically analyzed using Wagner’s interaction parameter formalism to determine the first-order interaction parameters of niobium and molybdenum on titanium in liquid iron as 0.0495±0.0049 and 0.01±0.0026, respectively, at 1873 K. Temperature dependence of these parameters was also determined as follows. e_Ti^Nb = 1160/T - 0.570, e_Ti^Mo = 0.01 (1873∼1973 K)</P>
Choi, Chel-Jong,Kang, Seung-Min,Hong, Hyo-Bong,Lee, Soo-Hyung,Kim, Jin-Gyu,Ahn, Kwang-Soon,Yoon, Jong-Won The Japan Institute of Metals 2010 MATERIALS TRANSACTIONS Vol.51 No.4
<P>We fabricated metal-oxide-semiconductor (MOS) devices with a high-k Er-silicate gate dielectric, and demonstrated their electrical performance. The increase in the rapid thermal annealing (RTA) temperature leads to a reduction of the equivalent oxide thickness (EOT), which is attributed in par to the thickness evolution of Er-silicate film and to the chemical bonding change from an Si-rich to an Er-rich silicate. The <I>in-situ</I> investigation of the interfacial reaction between the Er and SiO<SUB>2</SUB> film using a high-voltage electron microscopy (HVEM) revealed a linear relationship between the squared thickness of Er-silicate layer and <I>in-situ</I> annealing time, indicating that the Er-silicate growth is a diffusion-controlled process. The parabolic growth constants of the Er-silicate film were calculated to be 2.3×10<SUP>−16</SUP> and 9.3×10<SUP>−16</SUP> cm<SUP>2</SUP>/s for <I>in-situ</I> annealing temperatures of 350 and 450°C, respectively.</P>
Development of Metal Recovery Process from Alkaline Manganese Batteries in Sulfuric Acid Solutions
Shin, Shun-Myung,Kang, Jin-Gu,Yang, Dong-Hyo,Sohn, Jeong-Soo The Japan Institute of Metals 2007 MATERIALS TRANSACTIONS Vol.48 No.2
<P>A process for the recovery of Mn from a waste of spent alkaline batteries using sulfuric acid and hydrogen peroxide has been investigated. The proposed procedure consisted of mechanical separation of metal-containing particles and a leaching process. The effects of leaching agent, reaction temperature, time and pulp density for the leaching were also examined. Crushing and sieving of the spent batteries resulted in satisfactory separation of particle size from the waste. 99% Zn and 97% Mn were successfully extracted from the spent battery powder by the leaching at 60°C for 60 min with the addition of hydrogen peroxide as a reducing agent. The hydrogen peroxide addition led to almost doubling Mn extraction compared to without it.</P>
Baek, Seung-Wook,Choi, Don-Hyun,Lee, Chang-Yong,Ahn, Byung-Wook,Yeon, Yun-Mo,Song, Keun,Jung, Seung-Boo The Japan Institute of Metals 2010 MATERIALS TRANSACTIONS Vol.51 No.2
<P>Low carbon steel plates were joined by friction stir spot welding (FSSW) with lap configuration. The tool penetration depth exerted a strong effect on the failure mode of the joined samples and a weak effect on the joint shear strength. With increasing tool penetration depth, and consequently with increasing depth of the tool shoulder pressing into the top sample, the failure mode in a lap-shear test changed from brittle to ductile and concentrated near the pinhole located away from the weld towards the base metal. No mechanically mixed layer was formed between the top and bottom plates at the weld nugget due to the limited tool penetration and the fact that the pin height of the welding tool was less than the steel plate thickness. The region under the pin exhibited a fully recrystallized microstructure, with grain growth and a different texture.</P>
Effect of Ar/Ar-H<sub>2</sub> Plasma Arc Melting on Cu Purification
Lim, Jae-Won,Kim, Min-Seuk,Munirathnam, N. R.,Le, Minh-Tung,Uchikoshi, Masahito,Mimura, Kouji,Isshiki, Minoru,Kwon, Hyuk-Chon,Choi, Good-Sun The Japan Institute of Metals 2008 Materials transactions Vol.49 No.8
<P>Removal of impurities from Cu metal by Ar and Ar-20%H<SUB>2</SUB> plasma arc melting (PAM) has been carried out. Several impurities such as Li, Na, Mg, P, S, Cl, K, Ca, Zn, Pd, Pb and Bi in Cu were efficiently removed when only Ar plasma gas was used. Moreover, removal degrees for the above mentioned impurities were significantly increased after Ar-20%H<SUB>2</SUB>-PAM, especially for K, Zn and Pd. It was found that Ar-H<SUB>2</SUB> PAM showed an excellent effect to eliminate impurities with higher vapor pressures than that of Cu metal.</P>
Metal Leaching from Spent Petroleum Catalyst by Acidophilic Bacteria in Presence of Pyrite
Kim, Dong J.,Mishra, D.,Park, K. H.,Ahn, J. G.,Ralph, D. E. The Japan Institute of Metals 2008 MATERIALS TRANSACTIONS Vol.49 No.10
<P>This paper describes studies on the recovery of metals from spent hydro-processing catalyst using mixed acidophilic culture in presence of pyrite. This culture was initially grown in the 9K<SUP>−</SUP> medium (absence of 9 g/L Fe(II)) where ferrous sulphate (FeSO<SUB>4</SUB>) was replaced by pyrite, and then applied in this bioleaching study. Bacterial action on pyrite catalysed the formation of ferric ion (Fe<SUP>+3</SUP>), proton (H<SUP>+</SUP>) and sulphate ions (SO<SUB>4</SUB><SUP>−2</SUP>) in the solution which leached metals (Ni, Mo and V) from the spent catalyst. Experiments were conducted by varying the reaction time, amount of spent catalyst and pyrite, and temperature. After 7 days with 30 g/L of spent catalyst and 50 g/L of pyrite, the leaching of Ni, V and Mo into the solution was 85, 92 and 26%, respectively. With increasing spent catalyst loading, the extent of metal dissolution was decreased, probably due to the precipitation of Fe<SUP>+3</SUP> as a residue. Under all conditions tested, Mo showed recovery due to its precipitation with leach residues as MoO<SUB>3</SUB> observed by applying EDAX and XRD techniques to the leach residues.</P>
Lead Trace Removal from Waste Electronic Scraps by Organic Acids
Shin, D.,Jeong, J.,Kim, B.-s.,Ilyas, S.,Lee, J.-c. JAPAN INSTITUTE OF METALS 2014 MATERIALS TRANSACTIONS Vol.55 No.3
The removal of Pb traces from Pb-free solder is an important process in the recycling of solder. Pb must be removed before the more valuable metals are extracted, otherwise the recycling becomes less efficient and the end product impure. Pb removal by three organic acids is investigated here. Acetic acid was shown to dissolve Pb selectively from waste solder better than citric acid or oxalic acid could. Leaching for 72 h in 0.01M acetic acid removed approximately 137 mg/L Pb from the solder at 30 degrees C, 220 rpm; in addition, no Sn was leached. Higher concentrations of acetic acid (0.05 and 0.1 M) led to increased Sn leaching and decreased Pb leaching, similar to the results observed in citric acid. A total of 0.01M citric acid leached 7 mg/L Pb and 1831 mg/L Sn; 0.01 M oxalic acid leached 8 mg/L Pb and 1318 mg/L Sn. A comparison using pure Pb and Sn powders showed that the leaching of both metals increased with increasing concentrations of acetic acid and citric acid, contrary to the results observed using solder.