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자기전기복합체의 비공진 및 공진 상태에서의 자기전기 결합 특성 평가 방법
파틸디팍,류정호 한국전기전자재료학회 2022 전기전자재료학회논문지 Vol.35 No.4
자기전기복합체(magnetoelectric, ME compositie)는 자왜재료와 압전재료의 결합현상을 이용하는 재료로서지난 20여 년간 이론적, 실험적으로 많은 연구가 진행되어 왔다. 자기전기복합체의 출력특성은 구성하는 소재, 계면층,복합체의 형상, 자기장하 진동모드 등의 많은 구성요소의 최적화를 통하여 급속히 향상되고 있다. 하지만 자기전기복합체의 자기전기 결합 특성 평가는 대부분의 연구들에서 구체적인 방법을 제시하지 않아 어떻게 측정한 것인지가 불명확한 경우가 많다. 본 논문에서는 자기전기복합체의 비공진, 공진상황에서 자기전기 전압계수를 어떻게 측정할 수 있는지에 대한 자세한 방법을 소개한다. 평가를 위한 샘플로서 대칭적인 구조를 가지는 Gelfenol/PMN-PZT/Gelfenol자기전기복합체를 제조하였다. 압전 재료로는 이방성의 (011) 32 모드의 PMN-PZT 압전 단결정과 자왜재료로는 Galfenol 합금을 사용하여 에폭시로 접착하였다. 컴퓨터 인터페이스로 자동화된 자기전기 전압특성 측정 시스템의 구성을 우선 설명하고, 자기전기 결합특성의 측정 방법을 단계별로 설명한다. 본 튜토리얼 논문에서는 자기전기결합 특성과 특성평가방법을 이해하고자 하는 연구자들에게 도움이 될 수 있는 평가방법의 원리와 절차를 제공하고자 하였다.
제작방법에 따른 전력케이블용 폴리에틸렌 박막의 전기전도특성
조경순,이용우,이수원,홍진웅 한국전기전자재료학회 1997 電氣電子材料學會誌 Vol.10 No.5
In order to investigate the electrical conduction properties of polyethylene thin film for power cable with manufacturing methods, the thickness of specimen was the 30, 100[${\mu}{\textrm}{m}$] of LDPE and 200[${\mu}{\textrm}{m}$] of XLPE were manufactured. The experimental condition for conduction properties was measured until the breakdown occurs at temperature ranges from 30 to 110[$^{\circ}C$] and the electric field from 1$\times$10$^3$to 5$\times$10$^{6}$ [V/cm]. As for increase of temperature, the current density of LDPE was increased with constant ratio in low field, but changes with exponential function in high electric field. The tunnel current of pre-breakdown region is shifted toward low field as much as thermal excitation energy. At low electric field, the XLPE showed dominant electrical conduction properties by thermal excitation, and transformation of the electron was resisted by the crystal at high electric field.
HfO<sub>2</sub>/Hf/Si MOS 구조에서 나타나는 HfO<sub>2</sub> 박막의 물성 및 전기적 특성
배군호,도승우,이재성,이용현,Bae, Kun-Ho,Do, Seung-Woo,Lee, Jae-Sung,Lee, Yong-Hyun 한국전기전자재료학회 2009 전기전자재료학회논문지 Vol.22 No.2
In this paper, Thin films of $HfO_2$/Hf were deposited on p-type wafer by Atomic Layer Deposition (ALD). We studied the electrical and material characteristics of $HfO_2$/Hf/Si MOS capacitor depending on thickness of Hf metal layer. $HfO_2$ films were deposited using TEMAH and $O_3$ at $350^{\circ}C$. Samples were then annealed using furnace heating to $500^{\circ}C$. Round-type MOS capacitors have been fabricated on Si substrates with $2000\;{\AA}$-thick Pt top electrodes. The composition rate of the dielectric material was analyzed using TEM (Transmission Electron Microscopy), XRD (X-ray Diffraction) and XPS (X-ray Photoelectron Spectroscopy). Also the capacitance-voltage (C-V), conductance-voltage (G-V), and current-voltage (I-V) characteristics were measured. We calculated the density of oxide trap charges and interface trap charges in our MOS device. At the interface between $HfO_2$ and Si, both Hf-Si and Hf-Si-O bonds were observed, instead of Si-O bond. The sandwiched Hf metal layer suppressed the growing of $SiO_x$ layer so that $HfSi_xO_y$ layer was achieved. And finally, the generation of both oxide trap charge and interface trap charge in $HfO_2$ film was reduced effectively by using Hf metal layer.
전기이중층 커패시터의 특성에 미치는 혼성 도전재의 영향
김익준,이선영,문성인 한국전기전자재료학회 2004 전기전자재료학회논문지 Vol.17 No.1
This work describes the effect of composite conductor on the characteristics of electric double layer capacitor. Test cell, which was fabricated with conducting composite consisted of 80% of SPB and 20% of VGCF, exhibits the better tate capability and the lower resistance than those of the cells fabricated with single electronic conductor. These enhanced properties could be related with the decrease of contact resistance between the activated carbon powders.
3전극형 전자종이 디스플레이에서 하부전극 간격이 패널의 광특성에 미치는 영향
이상일,홍연찬,김영조,Lee, Sang-il,Hong, Youn-Chan,Kim, Young-cho 한국전기전자재료학회 2016 전기전자재료학회논문지 Vol.29 No.4
A three-electrode type reflective display (electronic paper) is designed to apply an independent electric field to each three electrodes of the cell including two electric-type of particles and electrically neutral color fluid, so single color realization is possible. In particular, the movement of particles and optical properties are decided by the electric field between two electrodes on the lower substrate. So, the effect of electric field by the distance between two electrodes on the lower substrate is studied with electrode spacing with $10{\mu}m$, $15{\mu}m$, $20{\mu}m$, and $25{\mu}m$. By our experimentation, the driving voltage induces more reliable movement of charged particles and the optical properties as compared with the threshold voltage. We ascertain the single color realization and non-inverted particle separation is possible. So the more desirable optical properties are observed in case of the short electrode like $10{\mu}m$.
전자빔 증착법으로 제작된 ZnS:Mn 박막의 구조 및 광학적 특성
정해덕,박계춘,이기식 한국전기전자재료학회 1997 電氣電子材料學會誌 Vol.10 No.10
ZnS:Mn thin film was made by coevaporation with Electron Beam Evaparation(EBE) method. And structural and optical characteristics of ZnS:Mn thin films were investigated by substrate temperature annealing temperature and dopant Mn. When ZnS:Mn thin film was well deposited with cubic crystalline at substrate temperature of 30$0^{\circ}C$ its surface index was [111] and its lattice constant of a was 5.41$\AA$. Also When ZnA:Mn thin film was well made with hexagonal crystalline at substrate temperature of 30$0^{\circ}C$annealing temperature of 50$0^{\circ}C$and annealing time of 60min its miller indices were (0002) (1011), (1012) and (1120). And its lattice constant of a and c was 3.88$\AA$and 12.41$\AA$ respectively. Finally hexagonal ZnS:Mn thin film with dopant Mn of 0.5wt% had fundamental absorption wavelength of 342nm. And so its energy bandgap was about 3.62eV.