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r김항규,신장규,이종현,신용현,김현태 경북대학교 센서기술연구소 1994 센서技術學術大會論文集 Vol.5 No.1
Porous silicon photodetectors with a vertical n-ITO/p-PSL heterojunction structure have been fabricated. From I-V characteristics of fabricated devices with white light from 0 to 3000 Lux, we find that the photocurrent varies linearly with incident light intensity. The transparent ITO affords light emission through the top surface of the device, as well as providing passivation and hence long-tens stability.