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Effect of Isovalent Doping on the Magnetic Properties of ZnMnO Diluted Magnetic Semiconductors
Ziyodbek A. Yunusov,Shavkat U. Yuldashev,강태원,이승주,권영해,전희창 한국물리학회 2019 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.74 No.2
The magnetic properties of a ZnMnO diluted magnetic semiconductor isovalently doped with Mg and S have been successfully studied. ZnMnO alloys were prepared with dierent concentrations of magnesium and sulfur by using ultrasonic spray pyrolysis technique; additionally, the lms were doped for free charge carriers by using nitrogen. For ZnMnO doped with 5% of Mg, the Curie temperature reached 104 K, and second-phase magnetic precipitates were observed with increasing Mg concentration. On the other hand, the sulfur doped ZnMnO showed an increased Curie temperature higher than room temperature due to increased number of holes which mediated the magnetic exchange interaction between magnetic ions.
얄리셰프,율다세프,Ziyodbek A. Yunusov,강태원 한국물리학회 2016 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.68 No.3
The response of the near-band-edge photoluminescence (PL) emission of ZnO thin films to annealing and the electric field’s action was investigated. These processes separately caused similar changes in the PL spectrum. The donor bound exciton emission at 3.36 eV, which is attributed to bulk defects, demonstrated invariance to any exposure, while the intensity of the 3.33-eV emission line decreased after annealing in nitrogen gas and was restored after annealing in an oxygen atmosphere. On the other hand, application of an electrical field during laser illumination resulted in the same change in the PL spectrum. The transition of defects related to the 3.33-eV emission from a radiative to a non-radiative state (and inversely) through the capture (release) of electrons was proposed as the mechanism responsible for the observed changes in the optical properties. The desorption of oxygen from the surface of the ZnO film during annealing in N2 or the motion of photogenerated electrons toward the surface during laser illumination were suggested to be the cause of this capture process.
Yalishev, Vadim Sh.,Yuldashev, Shavkat U.,Yunusov, Ziyodbek A.,Kang, Tae Won 한국물리학회 2016 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol. No.
<P>The response of the near-band-edge photoluminescence (PL) emission of ZnO thin films to annealing and the electric field's action was investigated. These processes separately caused similar changes in the PL spectrum. The donor bound exciton emission at 3.36 eV, which is attributed to bulk defects, demonstrated invariance to any exposure, while the intensity of the 3.33-eV emission line decreased after annealing in nitrogen gas and was restored after annealing in an oxygen atmosphere. On the other hand, application of an electrical field during laser illumination resulted in the same change in the PL spectrum. The transition of defects related to the 3.33-eV emission from a radiative to a non-radiative state (and inversely) through the capture (release) of electrons was proposed as the mechanism responsible for the observed changes in the optical properties. The desorption of oxygen from the surface of the ZnO film during annealing in N2 or the motion of photogenerated electrons toward the surface during laser illumination were suggested to be the cause of this capture process.</P>