http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
Yu Liu,Zengcai Song,Sheng Yuan,Lei Xu,Yanhui Xin,Meixia Duan,Shuxia Yao,Yangrui Yang,Zhenwei Xia 대한금속·재료학회 2020 ELECTRONIC MATERIALS LETTERS Vol.16 No.1
In this study, heterojunction photoelectric devices based ZnO nanowires were fabricated on p-Si substrate with and without single-layer graphene as insert layer. ZnO nanowires and graphene were prepared by hydrothermal method and chemical vapor deposition respectively. The efect of insert layer on the morphology of ZnO nanowires was very weak as can be seen from scanning electron microscope and X-ray difraction. Raman scattering showed that the graphene prepared was a singlelayer structure. The ultraviolet detection performance of photodetectors with single graphene insert layer was much better than that of photodetectors without single graphene insert layer. The ultraviolet irradiation sensitivity of photodetectors with single graphene insert layer was up to 1071 which was improved 7 times than that of photodetectors without single graphene insert layer. Moreover, photodetectors with single graphene insert layer had faster response time (1.02 s) and recovery time (0.34 s).