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      • KCI등재

        Influence of Phosphorous Content on Microstructure Development at the Ni-P Plating/SAC Interface

        Zbigniew Huber,Joanna Wojewoda-Budka,Anna Wierzbicka-Miernik,Anna Sypien,Maciej Szczerba,Pawel Zieba 대한금속·재료학회 2016 ELECTRONIC MATERIALS LETTERS Vol.12 No.1

        Studies of the commonly used Ni-P surface finish of 4.3 and 11.6 wt. %of P content electroless plated on nickel substrates followed by theirreaction with SAC305 solder were performed. It was demonstratedthat the Ni-4.3P plating was crystalline, while the Ni-11.6P wasmostly amorphous. The transformation of the Ni-P into Ni3P phasetook place at 672 K and 605 K for low and high P amount, respectively. The activation energy (Ea) of the crystallization processes in the Ni-Pplating was lower for the Ni-11.6P plating. Interaction of SAC305solder with both types of the inspected plating showed the creation of(Cu,Ni)6Sn5 phase in the form of thin layer and large scallops, whilefor Ni-11.6P/SAC305 interface also (Ni,Cu)3Sn4 phase. The thicknessof these phases was larger in the case of low phosphorous containingplating. The Ni-11.6P plating after the reaction with SAC305 totallytransformed into Ni12P5, while the enrichment in P up to 10.5 wt. %occurred in the Ni-4.3P which did not lead to the appearance of anyNixPy type phases. After the reaction of plating with solder the Ni2SnPphase was not identified. This was related to the absence of spallingphenomenon of the intermetallics into solder.

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