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Wilke, A.,Yang, J.‐,M.,Kim, J. W.,Seifarth, O.,Dietrich, B.,Giussani, A.,Zaumseil, P.,Storck, P.,Schroeder, T. John Wiley Sons, Ltd. 2011 Surface and interface analysis Vol.43 No.4
<P><B>Abstract</B></P><P>Complex oxide heterostructures on Si gain in the field of engineered Si wafers increasing interest as flexible buffer systems for developing virtual Si substrates. Strain engineering of thin epitaxial Si thin films on insulating oxide buffers is of special interest to boost charge carrier mobility for Silicon‐on‐Insulator (SOI) technologies. The single crystalline Si(111)/Y<SUB>2</SUB>O<SUB>3</SUB> (111)/Pr<SUB>2</SUB>O<SUB>3</SUB> (111)/Si(111) heterostructure offers, in principle, the opportunity to grow strain‐engineered epitaxial Si(111) layers, realizing compressed, fully relaxed, as well as tensile‐strained Si films. This flexibility is based on a thickness‐dependence of the Y<SUB>2</SUB>O<SUB>3</SUB> lattice constant in the oxide bi‐layer buffer: In theory, the Y<SUB>2</SUB>O<SUB>3</SUB> buffer lattice constant on Pr<SUB>2</SUB>O<SUB>3</SUB>/Si(111) can change from pseudomorphism (bigger than Si) over the Si lattice constant towards a fully relaxed status (smaller than Si). By a detailed interface analysis, using TEM‐EELS in combination with an in‐situ RHEED–XPS study of the isomorphic Y<SUB>2</SUB>O<SUB>3</SUB> growth on Pr<SUB>2</SUB>O<SUB>3</SUB>/Si(111), the physical origin of this Y<SUB>2</SUB>O<SUB>3</SUB> buffer lattice constant variation is identified. It is possible to discriminate between the contributions from chemical mixing effects between the isomorphic oxides Y<SUB>2</SUB>O<SUB>3</SUB> and Pr<SUB>2</SUB>O<SUB>3</SUB> on the one hand and true misfit strain relaxation mechanisms in stoichiometric Y<SUB>2</SUB>O<SUB>3</SUB> on the other hand. Copyright © 2010 John Wiley & Sons, Ltd.</P>