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XPS STUDY OF CARBON NITRIDE THIN FILMS PREPARED BY ARC ION PLATING METHOD
Taki, Yusuke,Kitagawa, Toshihisa,Takai, Osamu 한국재료학회 1995 Fabrication and Characterization of Advanced Mater Vol.2 No.4
Amorphous carbon nitride thin films were prepared in $N_2-H_2\;and\;N_2-He$ plasmas by arc ion plating(AIP) method. X-ray photoelectron spectroscopy(XPS) study revealed that nitrogen atoms were bonded with carbon atoms as the forms of $C{\equiv}N$, C=N and C - N(not reliable) in the films. The decrease in $N_2$ partial pressure led N/C atomic ratio to be reduced from 0.3 to 0.1 because of the loss of reactive nitrogen in the systme. In the $N_2-H_2$ system, the component of the C=N bonding became predominant with the decrease in the $N_2$ partial pressure because hydrogen atoms terminated $sp^3$-carbon$ dangling bonds and nitrogen atoms were linked to carbon atoms located $sp^2$ sites.