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Tang, Zhenjie,Zhang, Jing,Jiang, Yunhong,Wang, Guixia,Li, Rong,Zhu, Xinhua The Korean Institute of Electrical and Electronic 2015 Transactions on Electrical and Electronic Material Vol.16 No.3
This research proposes the use of a composition modulated (ZrO<sub>2</sub>)<sub>x</sub>(Al<sub>2</sub>O<sub>3</sub>)<sub>1-x</sub> film as a charge trapping layer for charge trap flash memory; this is possible when the Zr (Al) atomic percent is controlled to form a variable bandgap as identified by the valence band offsets and electron energy loss spectrum measurements. Compared to memory devices with uniform compositional (ZrO<sub>2</sub>)<sub>0.1</sub>(Al<sub>2</sub>O<sub>3</sub>)<sub>0.9</sub> or a (ZrO<sub>2</sub>)<sub>0.92</sub>(Al<sub>2</sub>O<sub>3</sub>)<sub>0.08</sub> trapping layer, the memory device using the composition modulated (ZrO<sub>2</sub>)<sub>x</sub>(Al<sub>2</sub>O<sub>3</sub>)<sub>1-x</sub> as the charge trapping layer exhibits a larger memory window (6.0 V) at the gate sweeping voltage of ±8 V, improved data retention, and significantly faster program/erase speed. Improvements of the memory characteristics are attributed to the special energy band alignments resulting from non-uniform distribution of elemental composition. These results indicate that the composition modulated (ZrO<sub>2</sub>)<sub>x</sub>(Al<sub>2</sub>O<sub>3</sub>)<sub>1-x</sub> film is a promising candidate for future nonvolatile memory device applications.
Zhenjie Tang,Jing Zhang,Yunhong Jiang,Guixia Wang,Rong Li,Xinhua Zhu 한국전기전자재료학회 2015 Transactions on Electrical and Electronic Material Vol.16 No.3
This research proposes the use of a composition modulated (ZrO2)x(Al2O3)1-x film as a charge trapping layer for charge trap flash memory; this is possible when the Zr (Al) atomic percent is controlled to form a variable bandgap as identified by the valence band offsets and electron energy loss spectrum measurements. Compared to memory devices with uniform compositional (ZrO2)0.1(Al2O3)0.9 or a (ZrO2)0.92(Al2O3)0.08 trapping layer, the memory device using the composition modulated (ZrO2)x(Al2O3)1-x as the charge trapping layer exhibits a larger memory window (6.0 V) at the gate sweeping voltage of ±8 V, improved data retention, and significantly faster program/erase speed. Improvements of the memory characteristics are attributed to the special energy band alignments resulting from non-uniform distribution of elemental composition. These results indicate that the composition modulated (ZrO2) x(Al2O3)1-x film is a promising candidate for future nonvolatile memory device applications.
Tang, Zhenjie,Ma, Dongwei,Jing, Zhang,Jiang, Yunhong,Wang, Guixia,Li, Rong,Yin, Jiang The Korean Institute of Electrical and Electronic 2014 Transactions on Electrical and Electronic Material Vol.15 No.5
$Pt/Al_2O_3/Si_3N_4/SiO_2/Si$ charge trap flash memory structures with various thicknesses of the $Si_3N_4$ charge trapping layer were fabricated. According to the calculated and measured results, we depicted electron loss in a schematic diagram that illustrates how the trap to band tunneling and thermal excitation affects electrons loss behavior with the change of $Si_3N_4$ thickness, temperature and trap energy levels. As a result, we deduce that $Si_3N_4$ thicknesses of more than 6 or less than 4.3 nm give no contribution to improving memory performance.
Zhenjie Tang,Ma Dongwei,Zhang Jing,Jiang Yunhong,Wang Guixia,Zhao Dongqiu,Rong Li,Jiang Yin 한국전기전자재료학회 2014 Transactions on Electrical and Electronic Material Vol.15 No.5
Charge trap flash memory capacitors incorporating (HfO2)x(Al2O3)1-x film, as the charge trapping layer, were fabricated. The effects of the charge trapping layer composition on the memory characteristics were investigated. It is found thatthe memory window and charge retention performance can be improved by adding Al atoms into pure HfO2; further,the memory capacitor with a (HfO2)0.9(Al2O3)0.1 charge trapping layer exhibits optimized memory characteristicseven at high temperatures. The results should be attributed to the large band offsets and minimum trap energylevels. Therefore, the (HfO2)0.9(Al2O3)0.1 charge trapping layer may be useful in future nonvolatile flash memory deviceapplication.
Tang, Zhenjie,Ma, Dongwei,Jing, Zhang,Jiang, Yunhong,Wang, Guixia,Zhao, Dongqiu,Li, Rong,Yin, Jiang The Korean Institute of Electrical and Electronic 2014 Transactions on Electrical and Electronic Material Vol.15 No.5
Charge trap flash memory capacitors incorporating $(HfO_2)_x(Al_2O_3)_{1-x}$ film, as the charge trapping layer, were fabricated. The effects of the charge trapping layer composition on the memory characteristics were investigated. It is found that the memory window and charge retention performance can be improved by adding Al atoms into pure $HfO_2$; further, the memory capacitor with a $(HfO_2)_{0.9}(Al_2O_3)_{0.1}$ charge trapping layer exhibits optimized memory characteristics even at high temperatures. The results should be attributed to the large band offsets and minimum trap energy levels. Therefore, the $(HfO_2)_{0.9}(Al_2O_3)_{0.1}$ charge trapping layer may be useful in future nonvolatile flash memory device application.
Design and bio-applications of biological metal-organic frameworks
Baoting Sun,Muhammad Bilal,Shiru Jia,Yunhong Jiang,Jiandong Cui 한국화학공학회 2019 Korean Journal of Chemical Engineering Vol.36 No.12
Biological metal-organic frameworks (bioMOFs) are a new subclass of the MOF family. In comparison with traditional MOFs, the bioMOFs are made of multifunctional biologically related ligands (bio-ligand) and metal ions. The bio-ligands confer biological compatibility for traditional MOFs, thus providing many opportunities for a wide array of biological applications. This review highlights the recent advances in the synthesis of bioMOFs comprising multifunctional bio-ligands and metal ions. These bio-ligands include nucleobases, amino acids, peptides, proteins, cyclodextrin, saccharides, and other biomolecules. Furthermore, the potential bio-applications of bioMOFs in several fields such as biomedicine, biosensing and bioimaging, antimicrobial applications, biomimetic catalysis, chiral separation, and environmental protection are also demonstrated.