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RISS 인기검색어
- 검색키워드
- 저자 : Yungsu Shin (검색결과 2 건)
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Growth and Electrical Properties of Vanadium-Dioxide Thin Films Fabricated by Magnetron Sputtering
Yungsu Shin,주홍렬,Changwoo Park,Joonchul Moon 한국물리학회 2008 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.52 No.6
Single crystalline vanadium-dioxide (VO₂) thin films on sapphire (0001) have been grown by using a radio-frequency (rf) magnetron sputtering technique. The dependences of the resistivity change and the hysteresis width of the VO₂ thin films on the oxygen flow ratio [수식] at a fixed deposition temperature of 550℃ have been studied. The VO$_2$ film grown at an oxygen flow ratio of 3.85 % showed a metal-to-insulator transition around ~65℃ with a resistivity ratio as high as 4.3 x 10³ and a hysteresis width of ~6 ℃. Moreover, the VO₂ film, thermally cycled of up to 100 times across the transition temperature, was found to be stable; i.e., no noticeable changes in the magnitude of the resistivity and in the shape of the hysteresis curve were observed. Single crystalline vanadium-dioxide (VO₂) thin films on sapphire (0001) have been grown by using a radio-frequency (rf) magnetron sputtering technique. The dependences of the resistivity change and the hysteresis width of the VO₂ thin films on the oxygen flow ratio [수식] at a fixed deposition temperature of 550℃ have been studied. The VO$_2$ film grown at an oxygen flow ratio of 3.85 % showed a metal-to-insulator transition around ~65℃ with a resistivity ratio as high as 4.3 x 10³ and a hysteresis width of ~6 ℃. Moreover, the VO₂ film, thermally cycled of up to 100 times across the transition temperature, was found to be stable; i.e., no noticeable changes in the magnitude of the resistivity and in the shape of the hysteresis curve were observed.
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Low-Resistivity Sputtered Films of Transparent Conducting Ta-Doped In2O3 Oxide
Joonchul Moon,Honglyoul Ju,Chang-Oh Jeong,Changwoo Park,강광선,Seung-Han Park,Yungsu Shin 한국물리학회 2005 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.47 No.1
Low-resistivity Ta-doped In2O3 (InTaO) films were grown on Corning1737 glass substrates from a ceramic target of (In0.95Ta0.05)2O3 by radio-frequency magnetron sputtering. The electrical and the optical properties of these films were investigated by varying the oxygen partial pressure pO2 (0 Torr pO2 1.0 × 10−4 Torr) and the deposition temperature TS (25C TS 350 C) during the deposition. The film grown at 350 C and pO2 = 0 Torr showed a resistivity as low as 0.28 m cm with a carrier density of 7.4 × 1020 cm−3, a Hall mobility of 30.1 cm2V−1s−1, an optical band gap of 4.04 eV, and an average transmittance above 85 % for wavelengths between 400 and 700 nm. These values are comparable to those of optimized Sn-doped In2O3 (ITO).
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