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Liang, Weizheng,Gao, Min,Lu, Chang,Zhang, Zhi,Chan, Cheuk Ho,Zhuge, Lanjian,Dai, Jiyan,Yang, Hao,Chen, Chonglin,Park, Bae Ho,Jia, Quanxi,Lin, Yuan American Chemical Society 2018 ACS APPLIED MATERIALS & INTERFACES Vol.10 No.9
<P>Vanadium dioxide (VO<SUB>2</SUB>) is a strong-correlated metal-oxide with a sharp metal-insulator transition (MIT) for a range of applications. However, synthesizing epitaxial VO<SUB>2</SUB> films with desired properties has been a challenge because of the difficulty in controlling the oxygen stoichiometry of VO<SUB><I>x</I></SUB>, where <I>x</I> can be in the range of 1 < <I>x</I> < 2.5 and V has multiple valence states. Herein, a unique moisture-assisted chemical solution approach has been developed to successfully manipulate the oxygen stoichiometry, to significantly broaden the growth window, and to significantly enhance the MIT performance of VO<SUB>2</SUB> films. The obvious broadening of the growth window of stoichiometric VO<SUB>2</SUB> thin films, from 4 to 36 °C, is ascribed to a self-adjusted process for oxygen partial pressure at different temperatures by introducing moisture. A resistance change as large as 4 orders of magnitude has been achieved in VO<SUB>2</SUB> thin films with a sharp transition width of less than 1 °C. The much enhanced MIT properties can be attributed to the higher and more uniform oxygen stoichiometry. This technique is not only scientifically interesting but also technologically important for fabricating wafer-scaled VO<SUB>2</SUB> films with uniform properties for practical device applications.</P> [FIG OMISSION]</BR>