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Exploring the Mediating Effect of Conspicuous Consumption by Utilizing Mobile Phone Brands
Youngseo KWON 한국유통과학회 2020 유통과학연구 Vol.18 No.3
Purpose: The purpose of this study is to investigate the mediating effect of conspicuous brand usage between brand experience and brand loyalty in relational perspective, and to probe the difference between the positively experienced consumers and the negatives. Research design, data and methodology: Apple iPhone, Samsung Galaxy, and other brands were suggested as consideration set to be selected from 223 Amazon Mechanical Turk respondents, and they answered the structured survey of 33 questions made by Qualtrics with 5-point Likert scale. Structural Equations Model (SEM) was employed to test the hypothesized model, and RStudio and SPSS 18 were used to analyze the dataset. Results: It was confirmed that the more consumers have positive brand experience, the more they are loyal to brand. Conspicuous brand usage can be positively mediated, and consumers who experienced high conspicuous brand usage are more likely to be loyal to the brand. Conclusions: It is noteworthy to find the mediating effect of conspicuous brand usage, and the hidden mechanism between brand experience and brand loyalty. Managers can promote positive conspicuous brand usage when consumers get in touch with product and service channels. By providing impressive conspicuous brand experience, the brand loyalty of the band can be enhanced.
Choi, Yoon-Ho,Kwon, Gi-Hyeon,Jeong, Jae-Hun,Jeong, Kwang-Sik,Kwon, Hyeokjae,An, Youngseo,Kim, Minju,Kim, Hyoungsub,Yi, Yeonjin,Im, Seongil,Cho, Mann-Ho Elsevier 2019 APPLIED SURFACE SCIENCE - Vol.494 No.-
<P><B>Abstract</B></P> <P>The transition metal dichalcogenides (TMDs) have great optical absorption and mobility in a subnanometer thickness. The MoSe<SUB>2</SUB> among TMDs is significantly interested as an active layer in optical devices because it is superior to other TMDs in light absorption. Herein, we investigated the mechanism and characteristics of phototransistors using bi-layer MoSe<SUB>2</SUB> film grown by molecular beam epitaxy. The interaction between the Al<SUB>2</SUB>O<SUB>3</SUB> and MoSe<SUB>2</SUB> was explored by X-ray and ultraviolet photoelectron spectroscopy, which showed that the chemical bonding and energy-band bending in the MoSe<SUB>2</SUB> due to the electron doping. The optical devices exhibited well-controlled performance of the phototransistors with gate bias and illumination power-density, resulting in superior photoresponsivity (<I>R</I>) of 242 A/W. The mechanism of the <I>R</I> was fully interpreted by the change in quasi Fermi levels, defect states, mobility, and metal contact. Especially, capturing the electrons (holes) generated in the defect states increases the probability that the untrapped holes (electrons) reach the source and drain electrode, resulting in the high <I>R</I>. In addition, the decay mechanism was described by lowering the temperature, which persistent photocurrent was not observed at the low temperature. Finally, the performance of logic gates composed of the MoSe<SUB>2</SUB> demonstrates its applicability to future photo-sensing systems.</P> <P><B>Highlights</B></P> <P> <UL> <LI> The phototransistor was fabricated with the bilayer-MoSe<SUB>2</SUB> grown by molecular beam epitaxy. </LI> <LI> The phototransistor exhibited high photoresponsivity(<I>R</I>) and external quantum efficiency(<I>EQE</I>). </LI> <LI> The mechanism of the high <I>R</I> and <I>EQE</I> was interpreted by the defects, mobility, and interfaces. </LI> </UL> </P>