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( Young-june Park ) 대한민국역사박물관 2015 Journal of Contemporary Korean Studies Vol.2 No.2
Previous research on relations between Korea and Japan after the normalization of their relationship in 1965 has mainly focused on the cooperation and conflicts that have unfolded between the two countries over time. This research passes through the post-Cold War era and the beginning of the twenty-first century, and attempts to compare how Korea and Japan each coped with and responded to changes in the international situation while they were in the process of developing into powers within the global sphere. Furthermore, it examines how each country’s coping and response mechanisms influenced and changed the relationship of the two countries to each other. This paper specifically deals with the following three eras: the period immediately following the collapse of the Soviet Union; the era after the September 11 attacks in the United States; and the recent era of conflicts between the United States and China. In short, though South Korea and Japan share similar political structures and values, this research shows that how each country perceives and responds to the international order can, and often does, ignite conflicts between them.
( Young-june Park ) 한국국방연구원 2017 The Korean Journal of Defense Analysis Vol.29 No.3
The rise of China triggers a hot debate in the United States as well as in China concerning whether a rising power can coordinate with the existing power or inevitably confront each other. On this issue, some foresee a possibility of the next great war between the two countries whereas others view the prospect of co-evolution in which Beijing and Washington can shrewdly evade armed conflicts. This paper tries to illustrate how the United States and China are expanding their naval capabilities in parallel with the ongoing strategic debate within China and the United States. The rivalry between the two countries can have a lot of influence on the foreign policies of neighboring countries like South Korea and Japan. This paper also deals with how South Korea and Japan, comparatively small powers, have responded to the super powers` power game in the region. Finally, this paper suggests some policy proposals for South Korea to play a role in stabilizing the regional order.
Diabetic Atherosclerosis and Glycation of LDL(Low Density Lipoprotein)
Young-June Park,Tae-Woong Kim 한국식품영양과학회 1996 Preventive Nutrition and Food Science Vol.1 No.1
Diabetes carries an increased risk of atherosclerotic disease that is not fully explained by known cardiovascular risk factors. There is accumulating evidence that advanced glycation of structural proteins, and oxidation and glycation of circulating lipoproteins, are implicated in the pathogenesis of diabetic atherosclerosis. Reactions involving glycation and oxidation of proteins and lipids are believed to contribute to atherogenesis. Glycation, the nonenzymatic binding of glucose to protein molecules, can increase the atherogenic potential of certain plasma constituents, including low density lipoprotein(LDL). Glycation of LDL is significant increased in diabetic patients compared with normal subjects, even in the presence of good glycemic control. Metabolic abnormalities associated with glycation of LDL include diminished recognition of LDL by the classic LDL receptor ; increased covalent binding of LDL in vessel walls ; enhanced uptake of LDL by macrophages, thus stimulating foam cell formation ; increased platelet aggregation ; formation of LDL-immune complexes ; and generation of oxygen free radicals, resulting in oxidative damage to both the lipid and protein components of LDL and to any nearby macromolecules. Oxidized lipoproteins are characterized by cytotoxicity, potent stimulation of foam cell formation by macrophages, and procoagulant effects. Combined glycation and oxidation, “glycoxidation” occurs when oxidative reactions affect the initial products of glycation, and results in irreversible structural alterations of proteins. Glycoxidation is of greatest significance in long lived proteins such as collagen. In these proteins, glycoxidation products, believed to be atherogenic, accumulate with advancing age : in diabetes, their rate of accumulate is accelerated. Inhibition of glycation, oxidation and glycoxidation may form the basis of future anti atherogenic strategies in both diabetic and nondiabetic individuals.
Effects of Shallow Trench Isolation on Silicon-on-Insulator Devices for Mixed Signal Processing
HyeokjaeLee,YoungJunePark,HongShickMin,이종호,HyungsoonShin,WookyungSun,Dae-GwanKang 한국물리학회 2002 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.40 No.4
The transconductance and the low-frequency noise of SOI MOSFETs with shallow trench isolation (STI) structures are investigated qualitatively for various device sizes and three dierent gate shapes. Devices with the channel region butted to the STI region show a reduction in the mobility and the increase in the low-frequency noise as the channel width is reduced. In comparison, the devices without STI butted channel region show a much lower reduction in the mobility and increase in the noise characteristics with the channel width. From the charge pumping and noise measurement results, the interface-state generated by the STI process is identied for the first time, as the cause of these anomalous phenomena.
Reduction of Reverse Short-Channel E ect in High-Energy Implanted Retrograde Well
HyeokjaeLee,YoungJunePark,HongShickMin,HyungsoonShin,Dae-GwanKang 한국물리학회 2002 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.40 No.4
In this research, the reverse short channel eect (RSCE) is signicantly dierent in electrical behavior for diffused well and high-energy (>150 keV - boron) implanted retrograde well (HRW) due to dopant diffusion kinetics. The magnitude of the VTH is signicantly smaller in the HRW than in diused well. We investigate the in uence of various implantation energies and doses on the RSCE, and we use process and device simulation to analyze the RSCE.
Design Consideration of Gate Shape in SOI MOSFETs for RF Applications
HyeokjaeLee,HyunchulNah,YoungJunePark,HongShickMin,이종호 한국물리학회 2002 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.40 No.4
The scale down of CMOS-SOI technologies has challenged toward the deep-submicron minimum feature size. This leads to great expectations for CMOS RF applications. Especially, the scale of the gate length along with the relatively wide gate width in RF-SOI circuits leads to reconsideration of gate design parameters, such as parasitic capacitance and AC/DC body potential instability. In this paper, we present the fT and the fmax properties associated with layout (nger width) and gate shapes (T-shape and H-shape structures) of multi-nger structures in sub-0.2-m partially depleted (PD) SOI devices. From analysis of unwanted parasitic eects, such as the gm variation (gm), and the extra parasitic capacitance variation (Cgs), and the body instability, we find the resulting speed characteristics (fT and fmax) to be strong functions of the number of ngers and the types of gate shapes.