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Sakka Yoshio,Saito Sho,Honda Atsushi,Suzuki Tohru S.,Moriyoshi Yusuke 한국분말야금학회 2006 한국분말야금학회 학술대회논문집 Vol.2006 No.1
We have demonstrated that textured nanocomposites can be fabricated by slip casting followed by partial oxidation. reaction sintering of mixed suspensions of and SiC powders in a high magnetic field. The sintered density was changed by the degree of oxidation at 1200C and 1300C. The degree of orientation of alumina in the nanocomposite was examined on the basis of the X-ray diffraction patterns and scanning electron micrographs. It is confirmed that aluminaoriented nanocomposites were fabricated. The three-point bending strength at room temperature was observed for the nanocomposites.
Relation between N–H complexes and electrical properties of GaAsN determined by H implantation
Jong-Han Lee,Hidetoshi Suzuki,Xiuxun Han,Katahiko Honda,Tomohiro Tanaka,Jong-Ha Hwang,Boussairi Bouzazi,Makoto Inagaki,Nobuaki Kojima,Yoshio Ohshita,Masafumi Yamaguchi 한국물리학회 2010 Current Applied Physics Vol.10 No.3
We investigated the relation between N–H complexes and the electrical properties of GaAsN, which is a potential material for fabricating super-high-efficiency multi-junction tandem solar cells. In order to separate the effect of other residual carrier such as carbon in a GaAsN film on the electrical properties, hydrogen (H) ions were implanted into GaAsN grown by chemical beam epitaxy (CBE) and then rapid thermal annealing from 250 to 650 ℃ was carried out. Two N–H complexes related to local vibrational modes (LVMs) in GaAsN were observed at 3098 and 3125 cm-1. With an increasing annealing temperature,the integrated peak intensity of the 3098 cm-1 peak (I3098) decreased, while that of the 3125 cm-1 peak (I3125) increased. This indicates that N–H complexes related to the 3125 cm-1 peak are thermally more stable than those related to the other peak. The hole concentrations and mobilities exhibited an increasing trend until an annealing temperature of 550 ℃ was reached. Their increases are attributed to the removal of donor-type defects. It is suggested that the N–H complexes related to the 3098 cm-1 peak are electrically active, while those giving the 3125 cm-1 peak are inactive.
Influence of a SiO2 Mask on the Growth of Semi-Polar (11-22) GaN on Patterned Si (311) Substrates
Min Yang,안형수,Masahito Yamaguchi,Nobuhiko Sawaki,Tomoyuki Tanikawa,Yoshio Honda 한국물리학회 2009 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.54 No.6
The selective growth of semi-polar (11-22) GaN layers on patterned Si (311) substrates was performed by using metal organic vapor phase epitaxy (MOVPE) without using a SiO2 mask to decrease the density of crystal defects that may be caused by the existence of the mask material. We found that even without using a SiO2 mask (11-22) GaN layers could be selectively grown on Si (111) facets when the mesa width of the patterned silicon substrates was smaller than 1 micrometer. Low temperature (7 K) cathodoluminescence (CL) measurement confirmed that the intensity of the emission peak arising from the crystal defect region was remarkably decreased by the use of a maskless selective growth method. Low-temperature CL measurements were also performed on InGaN multiple-quantum-well (MQW) structures grown on (11-22) GaN templates. From the CL spectra, we could observe that the InGaN MQW structure grown on a (11-22) GaN template, which was selectively grown without a SiO$_{2}$ mask, had fewer crystal defects than that grown on a (11-22) GaN template formed by using the conventional selective growth method.
Jung, Byung Oh,Bae, Si-Young,Kim, Sang Yun,Lee, Seunga,Lee, Jeong Yong,Lee, Dong-Seon,Kato, Yoshihiro,Honda, Yoshio,Amano, Hiroshi Elsevier 2015 Nano energy Vol.11 No.-
<P><B>Abstract</B></P> <P>Highly ordered, position-controlled gallium nitride (GaN) nanowire based multiple-quantum-wells (MQWs) core–shell architecture arrays are synthesized by metalorganic chemical vapor deposition (MOCVD). We investigate the possibility of using GaN nanowire arrays as a basal template for the growth of In<SUB> <I>x</I> </SUB>Ga<SUB>1−<I>x</I> </SUB>N/GaN MQWs. The MQWs on three different crystal facets (<I>c</I>-, <I>m</I>-, and <I>semipolar</I>-plane) of GaN nanowire exhibit dissimilar structural properties. The structural characteristics of InGaN/GaN core–shell arrays are inspected by cross-sectional high-resolution transmission electron microscopy (HR-TEM). We also investigate the optical properties of MQW core–shell structure nanoarrays. The luminescent characteristics of InGaN/GaN core–shell structure arrays are determined by photoluminescence (PL) and cathodoluminescence (CL) measurements. The monochromatic CL images clearly show the light emission behavior of InGaN/GaN MQW coaxial structure. Two distinguishable light emission peaks were observed in the GaN nanowire based core–shell structure. The characteristic of light emission mainly depends on the properties of MQWs, which are generated from different crystal facets of GaN. In addition, the light emission intensity shows different behaviors depending on the area of the GaN nanowire <I>m</I>-plane. The results of this study suggest that GaN nanowire arrays can be used as a good alternative basal template for next-generation light-emitting diodes (LEDs).</P> <P><B>Highlights</B></P> <P> <UL> <LI> This research describes a scalable process for the precise position-controlled selective area growth of GaN nanoarchitecture and its based InGaN/GaN MQWs core–shell arrays. </LI> <LI> The InGaN/GaN MQWs on three different crystal facets of GaN nanowire exhibit dissimilar structural and optical properties. </LI> <LI> The light emission mainly comes from MQWs on nonpolar { 1 1 ̄ 00 } <I>m</I>-plane sidewalls. </LI> <LI> The Fill factor (FF) is markedly increased up to 204.2% according to the <I>m</I>-plane height of the GaN nanowire. </LI> </UL> </P> <P><B>Graphical abstract</B></P> <P>[DISPLAY OMISSION]</P>
Growth of AlN layer on patterned sapphire substrate by hydride vapor phase epitaxy
Lee, Gang Seok,Lee, Chanmi,Jeon, Hunsoo,Lee, Chanbin,Bae, Sung Geun,Ahn, Hyung Soo,Yang, Min,Yi, Sam Nyung,Yu, Young Moon,Lee, Jae Hak,Honda, Yoshio,Sawaki, Nobuhiko,Kim, Suck-Whan IOP Publishing 2016 Japanese journal of applied physics Vol.55 No.5
<P>Even though a patterned sapphire substrate (PSS) has been used for the growth of a high-quality epilayer because of its many advantages, it has not been successfully used to grow an AlN epilayer for ultraviolet (UV) light-emitting diodes (LEDs) on a PSS up to now. We report the growth of a high-quality AlN epilayer on a PSS, as a substrate for the manufacture of UV LEDs, by hydride vapor phase epitaxy (HVPE). The X-ray diffraction (XRD) peaks for the AlN epilayer grown on the PSS indicate that crystalline AlN with a wurtzite structure was grown successfully on the PSS. Furthermore, HVPE combining both in situ HVPE technology and liquid-phase epitaxy (LPE) using a mixed source is proposed as a novel method for the growth of a flat AlN epilayer on a PSS. (C) 2016 The Japan Society of Applied Physics</P>