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Yoshiki Yasukoch,Jun Sakuma,Ichiro Takeuchi,Kimihiko Kato,Mitsutoshi Oguri,Tetsuo Fujimaki,Hideki Horibe,Yoshiji Yamada 생화학분자생물학회 2017 Experimental and molecular medicine Vol.49 No.-
Genome-wide association studies have identified various genetic variants associated with complex disorders. However, these studies have commonly been conducted in a cross-sectional manner. Therefore, we performed a longitudinal exome-wide association study (EWAS) in a Japanese cohort. We aimed to identify genetic variants that confer susceptibility to hypertension using ~ 244 000 single-nucleotide variants (SNVs) and physiological data from 6026 Japanese individuals who underwent annual health check-ups for several years. After quality control, the association of hypertension with SNVs was tested using a generalized estimating equation model. Finally, our longitudinal EWAS detected seven hypertension-related SNVs that passed strict criteria. Among these variants, six SNVs were densely located at 12q24.1, and an East Asian-specific motif (haplotype) ‘CAAAA’ comprising five derived alleles was identified. Statistical analyses showed that the prevalence of hypertension in individuals with the East Asian-specific haplotype was significantly lower than that in individuals with the common haplotype ‘TGGGT’. Furthermore, individuals with the East Asian haplotype may be less susceptible to the adverse effects of smoking on hypertension. The longitudinal EWAS for the recessive model showed that a novel SNV, rs11917356 of COL6A5, was significantly associated with systolic blood pressure, and the derived allele at the SNV may have spread throughout East Asia in recent evolutionary time.
Carrier Transfer in Closely Stacked GaAs/AlGaAs Quantum Dots Grown by Using Droplet Epitaxy
Martin Elborg,Yuanzhao Yao,Takeshi Noda,Takaaki Mano,Yoshiki Sakuma,Raman Bekarevich,Kazutaka Mitsuishi 한국물리학회 2018 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.72 No.11
We investigate the carrier transfer in stacked droplet epitaxially grown GaAs quantum dots (QDs) in experiments and calculations. While in the Stranski-Krastanov growth mode, QDs align due to stain propagation, droplet epitaxy QDs pose a difficulty for achieving coupled stacked QDs due to their random positioning. We demonstrate that carrier transfer is possible in such structures by designing their size and areal density. We achieve a significant geometrical overlap between stacked QDs by employing an areal density of 3.9×1010 dots/cm2 and an average QD diameter of 45.5 nm. A clear redshift in the position of the photoluminescence peak is observed when the separation layer’s thickness is reduced from 16 nm to 2.5 nm. Theoretical calculations of the electronic states of the stacked QDs with varying degrees of misalignment confirm that this red-shift is mainly caused by a lowering of the ground state energy due to coupling. To separately analyze the effect of vertical carrier transfer between QDs, we investigate samples with two layers of stacked QDs of different sizes. We demonstrates in photoluminescence experiments that carriers readily transfer to the larger QD when the barrier thickness is reduced to a degree where tunneling is possible.