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Slip prevention algorithm for dual-rotor PM synchronous motor
Yong-Seok Ahn,Jin-Young Kim,Ki-Young Song,Kwan-Yuhl Cho,Hag-Wone Kim,Seong-Hoon Kim 전력전자학회 2024 JOURNAL OF POWER ELECTRONICS Vol.24 No.3
This study proposes a slip prevention algorithm with a load angle controller to prevent the slip phenomenon in dual-rotor PM synchronous motor (DR-PMSM) drives. A DR-PMSM employs inherent magnetic coupling between the inner and outer rotors for power transmission. This structure may lead to slip and desynchronization between the inner and outer rotors at sudden load variations; therefore, a slip prevention algorithm is necessary to enhance its reliability. Conventional passive slip prevention algorithms may induce load angle oscillation around the critical load angle, which will result in desynchronization between the inner and outer rotors. The PI load angle controller proposed in this study can prevent slip and load angle oscillation near the critical angle. The eff ectiveness of the proposed slip prevention algorithm is verified through mathematical modeling and simulation with MATLAB/Simulink, as well as through an experiment on a horse-power DR-PMSM.
Sang-HyeonLee,JaekyuLee,YongseokAhn,DaewonHa,GwanhyeobKoh,TaeyoungChung,KinamKim,HyungSooUh 한국물리학회 2002 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.40 No.4
If the tight electrical performance requirements of the cell transistors used in giga-bit density DRAM are to be met, the leakage currents through the junction and the transistor should be controlled very carefully. In this paper, we propose a novel cell transistor using LOcalized Channel and Field Implantation (LOCFI) for low-power, reliable operation in a giga-bit density DRAM and beyond. When a LOCFI cell transistor is used, the data retention time is greatly improved by virtue of the reduced cell leakage currents resulting from the suppressed ion implantation damage at the storage node.