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Sang-Hyun Oh,Eui-Seong Hwang,Eun-Seok Choi,Gyu-Dong Park,Jin-Gu Kim,Jin-Yong Seong,Jun-Hee Cho,Keun-Do Ban,Keun-Hwan Noh,Nam-Kyeong Kim,Seaung-Suk Lee,Seok-Won Lee,Seung-Jin Yeom,Soon-Yong Kweon,Suk-K 한국물리학회 2003 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.42 No.IV
We have investigated the ferroelectric properties of integrated Pt/SrBi2Ta2O9 (SBT)/Pt capacitors with capacitor-level dielectric of boron phosphosilicate glass (BPSG). A signicant reduction of remanent polarization (P-P^) was observed in the SBT capacitor as covered with BPSG lm and the polarization decay depended strongly on top electorde size. Detailed analyses showed the degradation resulted from bismuth loss in the surface region of SBT, which is closely related with the impurites diused from BPSG into SBT layer. The degradation of Pt/SBT/Pt ferroelectric capacitor was successfully prevented by inserting SiO2 layer as a impurity blocking layer between the SBT and the BPSG. Thereby device performances of SBT-based ferroelectric memory were also considerably improved.