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Dynamical Metal to Charge-Density-Wave Junctions in an Atomic Wire Array
Song, Sun Kyu,Samad, Abdus,Wippermann, Stefan,Yeom, Han Woong American Chemical Society 2019 NANO LETTERS Vol.19 No.8
<P>We investigated the atomic scale electronic phase separation emerging from a quasi-1D charge-density-wave (CDW) state of the In atomic wire array on a Si(111) surface. Spatial variations of the CDW gap and amplitude are quantified for various interfaces of metallic and insulating CDW domains by scanning tunneling microscopy and spectroscopy (STS). The strong anisotropy in the metal-insulator junctions is revealed with an order of magnitude difference in the interwire and intrawire junction lengths of 0.4 and 7 nm, respectively. The intrawire junction length is reduced dramatically by an atomic scale impurity, indicating the tunability of the metal-insulator junction in an atomic scale. Density functional theory calculations disclose the dynamical nature of the intrawire junction formation and tunability.</P> [FIG OMISSION]</BR>
Atomic layer etching of ultra-thin HfO<sub>2</sub> film for gate oxide in MOSFET devices
Park, Jae Beom,Lim, Woong Sun,Park, Byoung Jae,Park, Ih Ho,Kim, Young Woon,Yeom, Geun Young Institute of Physics [etc.] 2009 Journal of Physics. D, Applied Physics Vol.42 No.5
<P>Precise etch depth control of ultra-thin HfO<SUB>2</SUB> (3.5 nm) films applied as a gate oxide material was investigated by using atomic layer etching (ALET) with an energetic Ar beam and BCl<SUB>3</SUB> gas. A monolayer etching condition of 1.2 Å/cycle with a low surface roughness and an unchanged surface composition was observed for ultra-thin, ALET-etched HfO<SUB>2</SUB> by supplying BCl<SUB>3</SUB> gas and an Ar beam at higher levels than the critical pressure and dose, respectively. When HfO<SUB>2</SUB>-nMOSFET devices were fabricated by ALET, a 70% increase in the drain current and a lower leakage current were observed compared with the device fabricated by conventional reactive ion etching, which was attributed to the decreased structural and electrical damage.</P>
위성자료를 활용한 미계측유역의 홍수피해액 추산기법 개발 및 적용
염웅선,박동혁,안재현,Yeom, Woong-Sun,Park, Dong-Hyeok,Ahn, Jaehyun 한국수자원학회 2020 한국수자원학회논문집 Vol.53 No.12
Economic analysis is a basic step in establishing disaster mitigation measures, but it is difficult to verify the results due to uncertainty. Therefore, the scope of investigation and analysis is wide. However, it is difficult to predict the amount of damage caused by flooding because the collection of relevant data is limited in the ungauged basin. In this study, distributed runoff analysis and flooding analysis were performed, and a method of estimating the amount of flood damage in the ungauged basin was proposed using collectible social and economic indicators and flood analysis results. For distributed runoff analysis and flooding analysis, GRM (Grid based Rainfall-runoff Model) and G2D (Grid based 2-Dimensional land surface flood model) developed by Korea Institute of Civil engineering and Building Technology were used. The method of substituting collectible social and economic indicators into the simple method and improvement method was used to estimate the amount of flood damage. As a result of the study, it was possible to estimate the amount of flood damage using satellite data and social and economic indicators in the ungauged basin.
PDMS 와 유리를 이용한 생화학반응용 마이크로바이오칩
조철호(Chul-Ho Cho),조웅(Woong Cho),안유민(Yoomin Ahn),염혜정(Young-Sun Huh),허영선(Hye-Jung Yeom),황승용(Seung-Yong Hwang) 대한기계학회 2005 대한기계학회 춘추학술대회 Vol.2005 No.5
We have fabricated the PDMS/glass micro reactor for the biochemical reaction. To evaluate the proposed micro reactor, we performed the Restriction Enzyme(R.E) reaction and the Polymerase Chain Reaction(PCR). The R.E reaction and PCR using the microbiochip were successfully done with less time and sample compared to the conventional way.
Ferrite-Enhanced U-Shaped Internal Antenna for Large-Area Inductively Coupled Plasma System
Kyong Nam Kim,Jong Hyeuk Lim,Woong Sun Lim,Geun Young Yeom IEEE 2010 IEEE transactions on plasma science Vol.38 No.2
<P>A Ni-Zn ferrite-enhanced U-shaped internal inductive antenna (240 mm × 2300 mm) operated at 2 MHz was used as a linear plasma source for an ultralarge-area plasma, and its plasma and electrical characteristics were investigated and compared with those of the antenna operated at 13.56 MHz without the ferrite. By the magnetic field enhancement, the operation of the source showed higher power transfer efficiency, lower antenna impedance, and lower RF rms voltage compared to that operated at 13.56 MHz without the ferrite. When photoresist etch uniformity was measured by etching the photoresist using a 40-mtorr Ar/O<SUB>2</SUB> (7:3) mixture at 2 MHz by locating three U-shaped antennas in parallel, the etch uniformity less than 11% could be obtained on the substrate size of 2300 mm × 2000 mm.</P>