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Gorbachenya, K N,Kisel, V E,Yasukevich, A S,Prudnikova, M B,Maltsev, V V,Leonyuk, N I,Choi, S Y,Rotermund, F,Kuleshov, N V IOP Publishing 2017 Laser physics letters Vol.14 No.3
<P>We demonstrate a passively Q-switched Er,Yb:GdAl3(BO3)(4) diode-pumped laser emitting near 1.5 mu m. By using a single-walled carbon nanotube (SWCNT) as a saturable absorber, Q-switched laser pulses with energy of 0.8 mu J and duration of 130 ns at a maximum repetition rate of 500 kHz were obtained at 1550 nm.</P>
Passive Q-switching of microchip lasers based on Ho:YAG ceramics
Lan, R.,Loiko, P.,Mateos, X.,Wang, Y.,Li, J.,Pan, Y.,Choi, S. Y.,Kim, M. H.,Rotermund, F.,Yasukevich, A.,Yumashev, K.,Griebner, U.,Petrov, V. Optical Society of America 2016 Applied Optics Vol.55 No.18
<P>A Ho:YAG ceramic microchip laser pumped by a Tm fiber laser at 1910 nm is passively Q-switched by single-and multi-layer graphene, single-walled carbon nanotubes (SWCNTs), and Cr2+:ZnSe saturable absorbers (SAs). Employing SWCNTs, this laser generated an average power of 810 mW at 2090 nm with a slope efficiency of 68% and continuous wave to Q-switching conversion efficiency of 70%. The shortest pulse duration was 85 ns at a repetition rate of 165 kHz, and the pulse energy reached 4.9 mu J. The laser performance and pulse stability were superior compared to graphene SAs even for a different number of graphene layers (n = 1 to 4). A model for the description of the Ho:YAG laser Q-switched by carbon nanostructures is presented. This modeling allowed us to estimate the saturation intensity for multi-layered graphene and SWCNT SAs to be 1.2 +/- 0.2 and 7 +/- 1 MW/cm(2), respectively. When using Cr2+:ZnSe, the Ho:YAG microchip laser generated 11 ns/25 mu J pulses at a repetition rate of 14.8 kHz. (C) 2016 Optical Society of America</P>