RISS 학술연구정보서비스

검색
다국어 입력

http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.

변환된 중국어를 복사하여 사용하시면 됩니다.

예시)
  • 中文 을 입력하시려면 zhongwen을 입력하시고 space를누르시면됩니다.
  • 北京 을 입력하시려면 beijing을 입력하시고 space를 누르시면 됩니다.
닫기
    인기검색어 순위 펼치기

    RISS 인기검색어

      검색결과 좁혀 보기

      선택해제

      오늘 본 자료

      • 오늘 본 자료가 없습니다.
      더보기
      • 무료
      • 기관 내 무료
      • 유료
      • KCI등재

        Si–Ge alloys in C2/c phase with tunable direct band gaps: A comprehensive study

        Qingyang Fan,Huiqin Wang,Wenzhu Zhang,Mingfei Wei,Yanxing Song,Wei Zhang,Sining Yun 한국물리학회 2019 Current Applied Physics Vol.19 No.12

        Si–Ge alloys are a new type of semiconductor material that are of great significance for the development of microelectronic technology, especially in the photoelectricity industry and for thermoelectric conversion in high temperature applications (> 700 K). In the present work, a novel Ge allotrope in the C2/c phase with band gap of 1.102 eV was firstly proposed, which is suitable for the absorption of sunlight. C2/c-Ge are mechanically, dynamically and thermodynamically stable. A series of Si24-xGex alloys (x=0, 8, 16, 24) in the C2/c phase with band gaps of 1.10–1.50 eV are predicted by ab initio calculations at ambient conditions. The Si24-xGex alloys (x=0, 8, 16, 24) in C2/c phase have better absorption ability than that of the Si in diamond, hP12 and oC12 phases. The Si24-xGex alloys in the C2/c phase have the strong absorption in the visible, which have a great impact on the new-generation photovoltaic applications.

      연관 검색어 추천

      이 검색어로 많이 본 자료

      활용도 높은 자료

      해외이동버튼