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RISS 인기검색어
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- 저자 : YangdoKim (검색결과 5 건)
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Electrical Characterization of Si Nanoparticles Embedded in SiO2 Thin Films
Yang do Kim,김은규,Soojin Lee,조운조 한국물리학회 2006 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.49 No.3
A °oating gated quantum dot memory using threshold shifting from charges stored in nanopar- ticles of silicon is expected to be promising candidate for future nonvolatile memory devices. Silicon nanoparticles of 1 » 5 nm in diameter embedded in SiO2 thin ¯lms were made by using an ultrasound induced solution method. SiO2 layers were deposited by RF magnetron sputtering in pure Ar gas. The substrate temperatures was changed from room temperature to 200 ±C under the same deposition conditions. From the capacitance-valtage measurements of metal-oxide-semiconductor capacitors fabricated with the Si nanopaticles in the SiO2 layer, the °at-band voltages changed by about 4.8 V due to charging and discharging to the nanoparticles.
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Analysis of Ti-Silicide Formation with a Thin Ta Interlayer on Si (100)
전형탁,HeykyoungWon,YangdoKim,JaeseobLee,R.J.Nemanich 한국물리학회 2002 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.40 No.5
The phase formation of Ti-silicide with a Ta interlayer deposited on Si (100) substrates has been studied. The Ti layer of 100 A was deposited on top of a 5 A Ta interlayer on a Si (100) substrate. After metal deposition, the Si substrate was in-situ annealed at temperatures between 580 and 830 C. Ti-silicides were formed and analyzed with using X-ray diractometer (XRD), scanning electron microscope (SEM), Auger electron spectroscopy (AES), and transmission electron microscope (TEM) to verify the phase transition and the surface and interface morphologies. The change in the temperature of the phase transition from C49 to C54 TiSi2 was observed. The C49 to C54 TiSi2 phase transition temperature was below 630 C for the samples with the Ta interlayer and was about 830 C for the samples without the Ta interlayer. The temperature of the phase transition from C49 to C54 TiSi2 with the Ta interlayer was observed to be lowered by about 200 C. The AES data showed a 1:2 ratio of Ti:Si in the Ti-silicide layer and indicated that the Ta layer remained at the interface between TiSi2 and the Si (100) substrate. A retarded agglomeration of Tisilicide was observed with the Ta interlayer. The present results for Ti-silicide with a Ta interlayer conrmed that the areal coverage and island morphologies of TiSi2 on Si (100) were uniform and smooth.
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Remote RF Oxygen Plasma Cleaning of the Photoresist Residue and RIE-Related Fluorocarbon Films
SungBaeKim,HyungtakSeo,YangdoKim,전형탁,JongkookSong,HyunSoh,YoungChaiKim 한국물리학회 2002 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.41 No.2
The eciency of remote rf oxygen plasma cleaning of the photoresist residue and reactive-ionetching (RIE) induced uorocarbon was investigated under various processing conditions, such as plasma power, exposure time, gas ow rate, and sample temperature. The inhomogeneous uorocarbon lm thickness after the RIE process was observed. The ashing rate generally increased with increasing processing temperature, oxygen gas ow rate, rf plasma power, and plasma exposure time. A more signicantly increased ashing rate was observed with the photoresist before the RIE process than after the RIE process. The photoresist ashing kinetics, or activation energy change, was observed at a temperature around 100. The density of reactive oxygen radicals in the oxygen plasma signicantly aected the ashing rate. Atomic force microscopy and scanning electron microscopy revealed the inhomogeneous ashing characteristic of the photoresist. This study presents a systematical evaluation of remote rf oxygen plasma cleaning of the photoresist residue and RIEinduced uorocarbon.
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Characterization of Ultra-Thin HfO2 Gate Oxide Prepared by Using Atomic Layer Deposition
TaehoLee,안진호,JaeminOh,YangdoKim,Young-BaeKim,Duck-KyunChoi,JaehakJung 한국물리학회 2003 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.42 No.III
Ultra-thin hafnium-oxide lms were deposited by using atomic layer deposition. The impurity distribution and the lm properties were studied in the deposition temperature range between 200 C and 400 C. Suppressed crystallization with eective Cl impurity reduction was obtained at medium temperature (300 C), which resulted in a hafnium-oxide lm with a low leakage current (2.06*10-7A/cm2 at -2.0 MV/cm) and a small equivalent oxide thickness value (23.9 A) at the same time.
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Comparison of TiN and TiN/Ti/TiN Multilayer Films for Diffusion Barrier Applications
JinYongPark,JuYounKim,김영도,전형탁,YangdoKim 한국물리학회 2003 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.42 No.6
TiN and TiN/Ti/TiN multilayer lms with dierent Ti-interlayer thicknesses of 50 and 100 A were deposited by using a sputtering method and their metal barrier characteristics were investigated. TiN lms showed relatively constant compositional depth proles with slightly nitrogen rich stoichiometry. TiN/Ti/TiN multilayer lms showed a relatively clear interface between the Ti and the TiN layers. TiN lms showed barrier failure after annealing at 500 C while the TiN/Ti/TiN multilayer lms showed higher failure temperatures than that of TiN lm. TiN/Ti/TiN multilayer lms also showed that the temperature stability of barrier layer was enhanced with increasing Tiinterlayer thickness. This study presents the barrier characteristics of TiN/Ti/TiN multilayer lms and their potential applications as copper diusion barriers without any modication of the current TiN deposition system
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