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Yalishev, Vadim Sh.,Yuldashev, Shavkat U.,Yunusov, Ziyodbek A.,Kang, Tae Won 한국물리학회 2016 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol. No.
<P>The response of the near-band-edge photoluminescence (PL) emission of ZnO thin films to annealing and the electric field's action was investigated. These processes separately caused similar changes in the PL spectrum. The donor bound exciton emission at 3.36 eV, which is attributed to bulk defects, demonstrated invariance to any exposure, while the intensity of the 3.33-eV emission line decreased after annealing in nitrogen gas and was restored after annealing in an oxygen atmosphere. On the other hand, application of an electrical field during laser illumination resulted in the same change in the PL spectrum. The transition of defects related to the 3.33-eV emission from a radiative to a non-radiative state (and inversely) through the capture (release) of electrons was proposed as the mechanism responsible for the observed changes in the optical properties. The desorption of oxygen from the surface of the ZnO film during annealing in N2 or the motion of photogenerated electrons toward the surface during laser illumination were suggested to be the cause of this capture process.</P>
Yalishev, Vadim Sh.,Yuldashev, Shavkat U.,Igamberdiev, Khusan T.,Kang, Tae Won,Park, Bae Ho Korean Physical Society 2014 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.64 No.1
We studied the photoluminescence (PL) spectra in the near-band-edge region of undoped ZnO films as a function of temperature to determine the thermal quenching behavior in the emission intensity. The quenching of the PL intensity was found to change to an increasing intensity with increasing temperature in the temperature region from 40 to 60 K. On the other hand, a reduction of the vacuum in the same temperature region was observed and was attributed to desorption of oxygen molecules from the cryostat finger. Further investigation revealed that the increase in the PL intensity was caused by adsorption of oxygen on the surface of ZnO films resulting in a decrease in the number of non-radiative recombination centers.
Effects of near-surface defects on the optical, electrical and magnetic properties of ZnO films
Yalishev, Vadim Sh.,Yuldashev, Shavkat U.,Igamberdiev, Khusan T.,Kang, Tae Won,Park, Bae Ho Korean Physical Society 2014 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.64 No.10
We studied the optical, electrical and magnetic properties of ZnO films prepared by using a pulsed laser deposition method. Low-temperature photoluminescence (PL) measurements revealed a strong emission line at 3.333 eV. A dependence of this emission intensity on oxygen adsorbed on the surface was observed, indicating a near-surface origin for the emission. The transition at 3.333 eV was attributed to bound exciton, and the observed anomalously small thermal activation energy in comparison with the localization energy could be explained by a modification of the surface state. The observed resistance switching effect and ferromagnetism in the ZnO films were related to the existence of defects responsible for the PL emission at 3.333 eV.
The role of zinc vacancies in bipolar resistance switching of Ag/ZnO/Pt memory structures
Yalishev, Vadim Sh,Yuldashev, Shavkat U,Kim, Yeon Soo,Park, Bae Ho IOP Pub 2012 Nanotechnology Vol.23 No.37
<P>We have presented a study of the bipolar resistance switching characteristics in the Ag/ZnO/Pt cell. This switching is accompanied by a change in intensity of the photoluminescence emission at 3.33 eV which is attributed to zinc vacancy related transitions in ZnO film. Besides voltage-driven resistance switching phenomena, a transition from a high-resistance state to a lower one is observed under laser illumination at low temperature. These results demonstrate that the bipolar resistance switching can originate due to an electron trapping/de-trapping process at zinc-vacancy defects localized in the interface layer. The Mott metal–insulator transition is proposed as a possible mechanism of the memory effect. </P>
Influence of Mn-oxide Nanoclusters on the Electric Properties of ZnO:Mn Films
Vadim Sh. Yalishev,홍사환,박배호,V. Pelenovich,율다세프 한국물리학회 2009 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.55 No.1
Polycrystalline ZnO:Mn films have been deposited on Si substrates by using ultrasonic spray pyrolysis methods. ZnO:Mn (3%) films show hysteretic behaviors in the I-V curves and these behaviors are related to charging and discharging of Mn-oxide nanoclusters. The conditions for hysteresis to appear depend on the sizes of the formed Mn-oxide nanoclusters close to the electrode interfaces.