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Sangsoo Noh,Eungahn Lee,Xiaoan Fu,Chen Li,Mehran Mehregany 한국전기전자재료학회 2005 Transactions on Electrical and Electronic Material Vol.6 No.6
The physical and electrical properties of polycrystalline β-SiC were studied according to different nitrogen doping concentration. Nitrogen-doped SiC films were deposited by LPCVD(low pressure chemical vapor deposition) at 900 ºC and 2 torr using 100 % H2SiCl2 (35 sccm) and 5 % C2H2 in H2(180 sccm) as the Si and C precursors, and 1 % NH3 in H2(20~100 sccm) as the dopant source gas. The resistivity of SiC films decreased from 1.466 Ω×㎝ with NH3 of 20 sccm to 0.0358 Ω×㎝ with 100 sccm. The surface roughness and crystalline structure of β-SiC did not depend upon the dopant concentration. The average surface roughness for each sample 19-21 ㎚ and the average surface grain size is 165 ㎚. The peaks of SiC(111), SiC(220), SiC(311) and SiC(222) appeared in polycrystalline β-SiC films deposited on Si/SiO2 substrate in XRD(X-ray diffraction) analysis. Resistance of nitrogen-doped SiC films decreased with increasing temperature. The variation of resistance ratio is much bigger in low doping, but the linearity of temperature dependent resistance variation is better in high doping. In case of SiC films deposited with 20 sccm and 100 sccm of 1 % NH3, the average of TCR(temperature coefficient of resistance) is -3456.1 ppm/°C and -1171.5 ppm/°C, respectively.
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Noh, Sang-Soo,Lee, Eung-Ahn,Fu, Xiaoan,Li, Chen,Mehregany, Mehran The Korean Institute of Electrical and Electronic 2005 Transactions on Electrical and Electronic Material Vol.6 No.6
The physical and electrical properties of polycrystalline $\beta$-SiC were studied according to different nitrogen doping concentration. Nitrogen-doped SiC films were deposited by LPCVD(1ow pressure chemical vapor deposition) at $900^{\circ}C$ and 2 torr using $100\%\;H_2SiCl_2$ (35 sccm) and $5 \%\;C_2H_2$ in $H_2$(180 sccm) as the Si and C precursors, and $1\%\;NH_3$ in $H_2$(20-100 sccm) as the dopant source gas. The resistivity of SiC films decreased from $1.466{\Omega}{\cdot}cm$ with $NH_3$ of 20 sccm to $0.0358{\Omega}{\cdot}cm$ with 100 sccm. The surface roughness and crystalline structure of $\beta$-SiC did not depend upon the dopant concentration. The average surface roughness for each sample 19-21 nm and the average surface grain size is 165 nm. The peaks of SiC(111), SiC(220), SiC(311) and SiC(222) appeared in polycrystalline $\beta$-SiC films deposited on $Si/SiO_2$ substrate in XRD(X-ray diffraction) analysis. Resistance of nitrogen-doped SiC films decreased with increasing temperature. The variation of resistance ratio is much bigger in low doping, but the linearity of temperature dependent resistance variation is better in high doping. In case of SiC films deposited with 20 sccm and 100 sccm of $1\%\;NH_3$, the average of TCR(temperature coefficient of resistance) is -3456.1 ppm/$^{\circ}C$ and -1171.5 ppm/$^{\circ}C$, respectively.
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