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RISS 인기검색어
- 검색키워드
- 저자 : X.T. Miao (검색결과 5 건)
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A split spectrum processing of noise-contaminated wave signals for damage identification
Miao, X.T.,Ye, Lin,Li, F.C.,Sun, X.W.,Peng, H.K.,Lu, Ye,Meng, Guang Techno-Press 2012 Smart Structures and Systems, An International Jou Vol.10 No.3
A split spectrum processing (SSP) method is proposed to accurately determine the time-of-flight (ToF) of damage-scattered waves by comparing the instantaneous amplitude variation degree (IAVD) of a wave signal captured from a damage case with that from the benchmark. The fundamental symmetrical ($S_0$) mode in aluminum plates without and with a notch is assessed. The efficiency of the proposed SSP method and Hilbert transform in determining the ToF of damage-scattered $S_0$ mode is evaluated for damage identification when the wave signals are severely contaminated by noise. Broadband noise can overwhelm damage-scattered wave signals in the time domain, and the Hilbert transform is only competent for determining the ToF of damage-scattered $S_0$ mode in a noise-free condition. However, the calibrated IAVD of the captured wave signal is minimally affected by noise, and the proposed SSP method is capable of determining the ToF of damage-scattered $S_0$ mode accurately even though the captured wave signal is severely contaminated by broadband noise, leading to the successful identification of damage (within an error on the order of the damage size) using a triangulation algorithm.
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A split spectrum processing of noise-contaminated wave signals for damage identification
X.T. Miao,F.C. Li,Lin Ye,X.W. Sun,H.K. Peng,Ye Lu,Guang Meng 국제구조공학회 2012 Smart Structures and Systems, An International Jou Vol.10 No.3
A split spectrum processing (SSP) method is proposed to accurately determine the time-of-flight (ToF) of damage-scattered waves by comparing the instantaneous amplitude variation degree (IAVD) of a wave signal captured from a damage case with that from the benchmark. The fundamental symmetrical (S0) mode in aluminum plates without and with a notch is assessed. The efficiency of the proposed SSP method and Hilbert transform in determining the ToF of damage-scattered S0 mode is evaluated for damage identification when the wave signals are severely contaminated by noise. Broadband noise can overwhelm damage-scattered wave signals in the time domain, and the Hilbert transform is only competent for determining the ToF of damage-scattered S0 mode in a noise-free condition. However, the calibrated IAVD of the captured wave signal is minimally affected by noise, and the proposed SSP method is capable of determining the ToF of damage-scattered S0 mode accurately even though the captured wave signal is severely contaminated by broadband noise, leading to the successful identification of damage (within an error on the order of the damage size) using a triangulation algorithm.
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Ablation of irradiated metals by high-intensity pulsed ion beam
X. P. Zhu,M. K. Lei,S. M. Miao,T. C. Ma,Z. H. Dong 한국물리학회 2003 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.42 No.III
Surface morphology and roughness of pure Ti irradiated by high-intensity pulsed ion beam (HIPIB) have been investigated by using scanning electronic microscope (SEM) and profilometer, respectively. The HIPIB irradiation was carried out at an accelerating voltage of 220 kV, an ion current density of \symbol{126}250 A/cm$^2$ with 75 ns pulse width under single or multi shots. Craters were formed on the irradiated surfaces and their dimension was expanded with increasing the ion current density. At $<$90 A/cm$% ^2 $, small craters of $\mu $m size were observed on the weakly melted surface. At 90-120 A/cm$^2$, large craters about 10 $\mu $m were found on the obviously melted surface. At 120-250 A/cm$^2$, the surface was severely melted with craters and the size of the craters increased to 20-80 $\mu $m with a wavy feature. At 250 A/cm$^2$ with 1 shot, surface roughness (\textit{% R}$_{\mathit{a}}$) greatly increased to a maximal value of 0.43 $\mu $m from the initial \textit{R}$_{\mathit{a}}$ of 0.18 $\mu $m, in good agreement with the SEM observation. With further increasing the shot number, the \textit{R}$_{\mathit{a}}$ decreased continuously and finally reached 0.06 $% \mu $m with 30 shots, indicating a planar ablated surface. The micro non-uniformity on the surfaces induced a selective ablation under HIPIB irradiation. The locally liquid evaporation and droplet ejection led to a disturbance in the molten surface layer to different scales depending on the ion current densities. On the other hand, the micro non-uniformity disappeared gradually under multi-shot irradiation, resulting in a more uniform ablation due to the diminished selective ablation.
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Large Spin Diffusion Length in an Amorphous Organic Semiconductor
Shim, J. H.,Raman, K. V.,Park, Y. J.,Santos, T. S.,Miao, G. X.,Satpati, B.,Moodera, J. S. American Physical Society 2008 Physical Review Letters Vol.100 No.22
<P>We directly measured a spin diffusion length (lambdas) of 13.3 nm in amorphous organic semiconductor (OS) rubrene (C42H28) by spin polarized tunneling. In comparison, no spin-conserved transport has been reported in amorphous Si or Ge. Absence of dangling bond defects can explain the spin transport behavior in amorphous OS. Furthermore, when rubrene barriers were grown on a seed layer, the elastic tunneling characteristics were greatly enhanced. Based on our findings, lambdas in single-crystalline rubrene can be expected to reach even millimeters, showing the potential for organic spintronics development.</P>
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