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유기질비료 시비량에 따른 오미자 묘목의 초기 생육특성에 관한 연구
이경아,박태호,박성용,김도현,오문국,김민수,안태진,이상원,김영국,안영섭,박충범,차선우,송범헌 忠北大學校 農業科學硏究所 2015 農業科學硏究 Vol.31 No.1
This study was carried out to have basic and applied informations to find the optimum nitrogen fertilization level for organic cultivation and to investigate early growth characteristics of Schizandra chinensis Baillon. Different application levels of the organic fertilizer were based on the recommended rate of N fertilizer. Five different levels of the organic fertilizer were applied to S. chinensis and early growth responses such as the length of vine, the diameter of vine, the number of leaves, and the number of branches were investigated. Lengths of main and total vines were shown longer at the level of 1.0 time organic fertilizer than those at others. The vine length at early growth was the highest at the level of 1.0 time organic fertilizer among the treatments. Stem diameter was shown thicker level of 1.0 time organic fertilizer than others on August and September, whereas on October it was the thickest in the conventional cultivation. Number of leaf was increased higher at the level of 1.0 and 2.0 times organic fertilizer than that in the compared to conventional. The number of branches was appeared the lowest at the level of 1.0 time organic fertilizer at early growth, however they were increased through progressing their growth stages. They were not significantly difference among the treatments except for the level of 2.0 times organic fertilizer. Based on the research results, the growth of S. chinensis was commonly higher at the level of 1.0 time organic fertilizer compared to other treatments.
Wu, Qinke,Jung, Seong Jun,Jang, Sung Kyu,Lee, Joohyun,Jeon, Insu,Suh, Hwansoo,Kim, Yong Ho,Lee, Young Hee,Lee, Sungjoo,Song, Young Jae RSC Pub 2015 Nanoscale Vol.7 No.28
<P>Correction for 'Controllable poly-crystalline bilayered and multilayered graphene film growth by reciprocal chemical vapor deposition' by Qinke Wu et al., Nanoscale, 2015, 7, 10357-10361.</P>
A band-rejection type RF switch based on a dual-mode microstrip ring resonator
Lee, Wu Seong,Ryu, Jae Jong,Moon, Yeon Kwan,Lee, Ju Gab,Kim, Ha Chul,Choi, Hyun Chul Wiley Subscription Services, Inc., A Wiley Company 2010 MICROWAVE AND OPTICAL TECHNOLOGY LETTERS Vol.52 No.4
<P>A band-rejection type RF switch, which has very high off-state isolation, low on-state insertion loss, and adjustable bandwidth, is proposed using a dual-mode ring resonator and two PIN diodes. To enable sharp band stop and dual-mode transmission, the ring resonator is directly fed using nonorthogonal feeding. Two PIN diodes are mounted in shunt after a quarter-wavelength transmission line from each feeding point, to turn the switch on and off and to reduce the size of the ring resonator. To estimate the practicable transmission characteristics of the proposed switch in relation to the angle of feeding and the wire-bonded PIN diodes, a lossy transmission-line equivalent circuit model is proposed, and even–odd mode analysis is carried out. The calculated frequency response shows good agreement with the measurement. The fabricated switch exhibits off-state isolation of 43.08 dB, and on-state insertion loss of 0.74 dB, within the range of 2.298–2.401 GHz. © 2010 Wiley Periodicals, Inc. Microwave Opt Technol Lett 52:947–950, 2010; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.25080</P>
Lee, Huen,Kang, Seong Pil,Lee, Yoon Young,Lee, Hoon Wu 한국화학공학회 1996 NICE Vol.14 No.1
The vapor-liquid equilibrium data of the binary CFC, HCFC, and FC mixtures were correlated with the Soave-Redlich-Kwong equation of state incorporated with some types of mixing rules the conventional one fluid, Panagiotopoulos-Reid and modified Huron-Vidal second order mixing rules. the Panagiohtpoulos-Reid mixing rule showed the superiority to the other models in predicting the VLE of freon mixtures with low errors. the modified Huron-Vidal second order model showed good convergence ability, which was due W is robustness to parameter variation.
Wu, Qinke,Jung, Seong Jun,Jang, Sung Kyu,Lee, Joohyun,Jeon, Insu,Suh, Hwansoo,Kim, Yong Ho,Lee, Young Hee,Lee, Sungjoo,Song, Young Jae RSC Pub 2015 Nanoscale Vol.7 No.23
<P>We report the selective growth of large-area bilayered graphene film and multilayered graphene film on copper. This growth was achieved by introducing a reciprocal chemical vapor deposition (CVD) process that took advantage of an intermediate h-BN layer as a sacrificial template for graphene growth. A thin h-BN film, initially grown on the copper substrate using CVD methods, was locally etched away during the subsequent graphene growth under residual H2 and CH4 gas flows. Etching of the h-BN layer formed a channel that permitted the growth of additional graphene adlayers below the existing graphene layer. Bilayered graphene typically covers an entire Cu foil with domain sizes of 10-50 μm, whereas multilayered graphene can be epitaxially grown to form islands a few hundreds of microns in size. This new mechanism, in which graphene growth proceeded simultaneously with h-BN etching, suggests a potential approach to control graphene layers for engineering the band structures of large-area graphene for electronic device applications.</P>
Kang, Seong Pil,Lee, Huen,Lee, Yoon Wu,Lee, Yoon Young 한국화학공학회 1995 Korean Journal of Chemical Engineering Vol.12 No.5
The vapor-liquid equilibrium data of the binary CFC, HCFC, and FC mixtures were correlated with the Soave-Redlich-Kwong equation of state incorporated with some types of mixing rules; the conventional one fluid, Panagiotopoulos-Reid and modified Huron-Vidal second order mixing rules. The Panagiotopoulos-Reid mixing rule showed the superiority to the other models in predicting the VLE of freon mixtures with low errors. The modified Huron-Vidal second order model showed good convergence ability, which was due to its robustness to parameter variation.