Nitrogen - incorporated (Ba, Sr)TiO₃ thin films fabricated by r.f. - magnetron sputtering

Won Taeg Lim,Yong Kuk Jeong,Chang Hyo Lee 한국진공학회(ASCT) 2000 Journal of Korean Vacuum Science & Technology Vol.4 No.4

In this study, two kinds of barium strontium titanate (BST) samples were prepared. One is a conventional BST film that is sputtered in a mixture of argon and oxygen. The other is a nitrogen-incorporated BST film that is sputtered in a mixture of oxygen and intentionally added nitrogen instead of argon gas. The structural properties of both of the BST films had not changed significantly with the species of sputtering gas. However, the leakage current of BST films sputtered at (N₂+O₂) atmosphere was lower than those sputtered at (Ar +O₂) atmosphere: 1.9×10^(-8) A/㎤ at 2V for the films prepared at (Ar +O₂) atmosphere and 8.6×10^(-9) A/㎤ for the films at (N₂+O₂) atmosphere. From an XPS analysis, it has been found that nitrogen atoms are incorporated in BST films with a concentration of 1.92 at% and form a certain oxynitride phase. It is proposed that nitrogen atoms are able to fill the oxygen vacancies of BST films during sputtering process, and then the leakage current reduces due to a decrease in the vacancies. The BST films sputtered at (N₂+ O₂) atmosphere have superior electrical properties to the films sputtered at (Ar +O₂), without any significant structural changes.

A Study on the Utilization of PROTECTED Water Plants in the Park

Lim Jong-taeg,Lim Won-hyeon J-INSTITUTE 2019 Protection Convergence Vol.4 No.2

The reality is that despite the increasing area of green areas along with the diverse urban development phe-nomena, the area of green areas has been reduced relatively Daegu, Korea, causing various social and environ-mental problems. In response, the city of Daegu considered a plan to create a pocket park using protective water, which is an important factor, in order to expand the insufficient green area even a little. The Act on Urban Parks and Green Sites, etc. provides protection water pocket parks as shown in Table 17. First, based on the analysis factors and the criteria for formation, the creation of a pocket park based on the location can be divided into rural and urban types. In the case of rural types, 1 type of materials that can create protected water will be the preferred target for the village entrance or if located inside the village. 2 Natural green areas can be created first. 3 There is a high possibility of the formation of linked land if it is farmland or forest. For urban types, areas with minimal noise generation(1, 2 lanes) could be preferred. 5 In the form of flat land and structured land, 6 residential areas will be able to create urban rest areas. 7 In particular, for urban types, it was deemed that not far from the side of the road or on the side of the road was suitable for the require-ments of the location of the formation for the simple resting or resting space of pedestrians. Second, for land-related matters, it is deemed appropriate to apply the area below the average effective area(1,854 square meters) and below to create a pocket park utilizing protected water space. In addition, further research on securing raw space for future protected water pipe widths will need to be carried out. 2 The state that owns the land. If the land is shared, it can be built first. 3 There will be a need to actively secure green space by purchasing or leasing 53 percent of private land. 4 The protected water first forms a forest or bottleneck, but due to the nature of the pocket park, even a single tree will be the subject of sufficient composition. Third, the conclusion of the facility related matters should first consider the installation of a guide plate, chair, table, crest, potter, toilet, root protection deck among rest facilities, sports facilities and management facilities. 2 In addition to the basic information transfer factor for protected water, supplemental installation of signboards containing myths and legends will be required. 3 The development or supplementation of devices for the presen-tation of receipts will be necessary. Fourth, the conclusion on matters related to vegetation is that 1 average recipient is 288 years, and the number of protected water with a high receipt is the preferred target. 2 After examining the conditions of the pressure response or the rate of high death of the branches, it can be created for protected water with a moder-ate or higher raw meat condition. 3 The installation, dermis, and superfruits of shielding fences around the pro-tected water may be properly mixed and stocked. 4 Protective water in itself exerts sufficient Amenity function in the area, so do not place too many facilities in the space. There should be sufficient awareness among ordinary citizens or local people about the creation of parks using these protected water, and there should be a policy-driven device or system.

Nitrogen-incorporated (Ba, Sr)$TiO_3$ thin films fabricated by r.f.- magnetron sputtering

Lim, Won-Taeg,Jeong, Yong-Kuk,Lee, Chang-Hyo The Korean Vacuum Society 2000 Journal of Korean Vacuum Science & Technology Vol.4 No.4

In this study, two kinds of barium strontium titanate (BST) samples were prepared. One is a conventional BST film that is sputtered in a mixture of argon and oxygen. The other is a nitrogen-incorporated BST film that is sputtered in a mixture of oxygen and intentionally added nitrogen instead of argon gas. The structural properties of both of the BST films had not changed significantly with the species of sputtering gas. However, the leakage current of BST films sputtered at ($N_2$+O$_2$) atmosphere was lower than those sputtered at (Ar +O$_2$) atmosphere: 1.9$\times$10$^{-8}$ A/cm$^2$ at 2V for the films prepared at (Ar +O$_2$) atmosphere and 8.6$\times$10$^{-9}$ A/cm$^2$ for the films at ($N_2$+O$_2$) atmosphere. From an XPS analysis, it has been found that nitrogen atoms are incorporated in BST films with a concentration of 1.92 at% and form a certain oxynitride phase. It is proposed that nitrogen atoms are able to fill the oxygen vacancies of BST films during sputtering process, and then the leakage current reduces due to a decrease in the vacancies. The BST films sputtered at ($N_2$+O$_2$) atmosphere have superior electrical properties to the films sputtered at (Ar +O$_2$), without any significant structural changes.

재 프로그래밍 방법에 의한 MIM ANTIFUSE의 온저항 감소 효과

임원택(Won Taeg Lim),이상기(Sang Gi Lee),김용주(Yong Ju Kim),이창효(Chang Hyo Lee),권오경(Oh Kyong Kwon) 한국진공학회(ASCT) 1997 Applied Science and Convergence Technology Vol.6 No.3

Al/a-Si:H/Mo 구조의 MIM(Metal-Insulator-Metal) antifuse를 제작하여 antifuse의 I-V 특성을 조사하고, 온저항의 분포를 구하였다. 제작된 antifuse의 누설전류는 1 ㎀/㎛² 이하였고, 프로그래밍 전압은 10~11 V 내에 분포하였다. 프로그램 후 온저항은 대부분 10~20Ω 이었고, 20% 정도는 100Ω 이상의 분포도를 보였다. 이러한 온저항 분포의 편차와 저항값을 줄이기 위해 이미 프로그램된 antifuse에 다시 전류를 주입하는 재 프로그래밍 방법을 시도하였다. 이 방법을 통하여 100Ω 이상의 온저항을 가지는 antifuse를 다시 50Ω 이하로 낮출 수 있었다. 재 프로그래밍 방법을 사용한 antifuse는 한번만 프로그래밍 했을 때 보다 더욱 더 균일하고 낮은 온저항 분포를 가졌다. We fabricated MIM (Metal-Insulator-Metal) antifuses with Al/a-Si/Mo structure and then examined the I-V characteristics and on-state resistance distribution of antifuses. The leakage current of antifuses is below 1 ㎀/㎛², and programming voltage lies within 10 to 11 V. After programming, onresistance of antifuses is mostly 10-20Ω and 20% of these have above 100Ω. In order to reduce onresistance and the deviation of this distribution, we tried to inject current again into already programed antifuses (we call this the re-programming method). From this method, the resistance of antifuses with above 100Ω can be reduced to below 50Ω. When antifuses are programmed by re-programming method, these antifuses have more uniform and lower on-resistance than programed with one-pulse.

ITO, AZO, SZO 박막의 수소 플라즈마에 대한 안정성

임원택(Won-taeg Lim),안유신(You-shin Ahn),이상기(Sang-gi Lee),안일신(Il-sin An),이창효(Chang-hyo Lee) 한국진공학회(ASCT) 1997 Applied Science and Convergence Technology Vol.6 No.3

ITO, AZO, SZO 투명전도박막의 수소 플라즈마에 대한 안정성에 관하여 연구하였다. ITO는 Coming 사의 제품을 사용하였고, AZO와 SZO는 rf magnetron sputtering 방법으로 증착한 것을 이용하였다. 이 세가지 투명전도박막을 PECVD 챔버 내에 장착한 다음, 수소 플라즈마에 노출시켰다. 이 때 ITO 박막의 광투과도는 시편 표면의 온도와 시간이 증가할수록 감소하였는데 특히 300℃에서 30분간 노출시켰을 때 10~20% 정도의 광투과도를 나타내었으며, 박막의 전도성을 완전히 잃어 버렸다. 반면 AZO와 SZO의 경우, 수소 플라즈마 노출 온도와 시간에 대해 전반적으로 광투과도 손실이 나타나지 않았다. 하지만 박막내 수소의 유입으로 인하여 흡수대가 단파장 쪽으로 이동하는 'Burstein-Moss' 효과가 나타났다. 또한 표면구조에서도 AZO와 SZO가 수소 플라즈마 노출에 대해 안정성을 보인 반면 ITO의 표면은 indium과 tin의 금속입자로의 환원으로 인해 매우 거칠어짐을 보였다. The stabilities of ITO, AZO, and SZO have been studied in hydrogen plasma. We used the ITO films produced from Coming LTD. and AZO, SZO films made by rf magnetron sputtering methods. These films were loaded in PECVD chamber and exposed to hydrogen plasma. For ITO, the optical transmittance was decreased as sample surface temperature and exposure time were increased during hydrogen plasma treatment. The transmittance of ITO dropped to 10~20% and its conductivity disappeared completely after exposing to hydrogen plasma for 30 minutes at 300℃. For AZO and SZO, there was no optical loss but the optical gap was widened due to the hydrogen incorporation into the film, indicating Burstein-Moss effect. Also the surface morphology of AZO and SZO was stable in hydrogen ambient but ITO showed rough surface due to the reduction of metal elements.

영남지역 콩 생산.가공 특산단지 조성

Lim Sea-Gyu,Shin Seong-Hyu,Ha Tae-Joung,Shin Sang-Ouk,Choi Dae-Sig,Park Byeong-Myeong,Oh Ki-Won,Kim Jung-Tae,Park Keum-Yong,Suh Duck-Yong,Kim Beom-Su,Kwon Taeg-Ki 한국작물학회 2007 한국작물학회 학술발표대회 논문집 Vol.2007 No.-

Prediction of Etch Profile Uniformity Using Wavelet and Neural Network

Won Sun Choi,Myo Taeg Lim,Byungwhan Kim 대한전기학회 2004 International Journal of Control, Automation, and Vol.2 No.2

A Vehicle Detection Using Selective Multi-stage Features in Convolutional Neural Networks

Won Jae Lee,Dong Sung Pae,Dong Won Kim,Myo Taeg Lim 제어로봇시스템학회 2017 제어로봇시스템학회 국제학술대회 논문집 Vol.2017 No.10

ZnO : Al 투명 전도 박막의 전기적 특성에 관한 연구

임원택,김용주,김경인,이상기,이창효 漢陽大學校 基礎科學硏究所 1994 基礎科學論文集 Vol.13 No.-

ZnO분말에 Al₂O₃를 1.4∼2.6wt% 첨가하여 작한 target을 이용하여 RF magnetron sputtering방법으로 유리기판 위에 ZnO : Al 투명전도 박막을 제작하였다. 증착은 70% Ar와 30% O₂가스분위기에서 RF출력 80W 압력 ?? Torr, 그리고 기판온도는 150℃에서 하였다. 최적화된 ZnO : Al 박막은 85% 이상의 광투과율과 ??의 비저항을 나타낸다. 그리고 250℃이하 온도에서는 비저항 값이 일정히 유지되었다. Highly transparant and conductive films of ZnO: Al have prepared by RF magnetron sputtering from zinc oxide target doped Al₂O₃(1.4∼2.6wt%). Sputtering deposition was carried out at the gas pressure range of ?? Torr in 70% argon and 30% oxygen gas with an Rf power of 80W and at the substrate temperature of 150℃. Optimized ZnO : Al films have above 85% transmittance for visible light and ?? electrical resistivity at Al₂O₃content 2wt%. Below 250℃, the electrical resistivity of these films maintain constantly.

Design of A Controller Using Successive Approximation for Weakly Coupled Bilinear Systems

Jae-Won Chang,Young-Joong Kim,Beom-Soo Kim,Myo-Taeg Lim 대한전기학회 2002 KIEE International Transactions on systems and Con Vol.12D No.1